Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOB2904

AOB2904

MOSFET N-CH 100V 120A TO263

Alpha & Omega Semiconductor Inc.
3,622 -

RFQ

AOB2904

Scheda tecnica

Tape & Reel (TR) AlphaSGT™ Active - - - 120A (Tc) - - - - - - - - - Surface Mount
TK10A55D(STA4,Q,M)

TK10A55D(STA4,Q,M)

MOSFET N-CH 550V 10A TO220SIS

Toshiba Semiconductor and Storage
3,302 -

RFQ

TK10A55D(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 10A (Ta) 10V 720mOhm @ 5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
STL22N60DM6

STL22N60DM6

MOSFET N-CH 650V 15A PWRFLAT HV

STMicroelectronics
3,643 -

RFQ

STL22N60DM6

Scheda tecnica

Tape & Reel (TR) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 650 V 15A - - - - - - - - - Surface Mount
STFU25N60M2-EP

STFU25N60M2-EP

MOSFET N-CH 600V 18A TO220FP

STMicroelectronics
2,307 -

RFQ

STFU25N60M2-EP

Scheda tecnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 188mOhm @ 9A, 10V 4.75V @ 250µA 29 nC @ 10 V ±25V 1090 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP22N60DM6

STP22N60DM6

MOSFET N-CH 600V 15A TO220

STMicroelectronics
2,609 -

RFQ

STP22N60DM6

Scheda tecnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 240mOhm @ 7.5A, 10V 4.75V @ 250µA 20.6 nC @ 10 V ±25V 800 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9640LPBF

IRF9640LPBF

MOSFET P-CH 200V 11A I2PAK

Vishay Siliconix
2,123 -

RFQ

IRF9640LPBF

Scheda tecnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIE810DF-T1-E3

SIE810DF-T1-E3

MOSFET N-CH 20V 60A 10POLARPAK

Vishay Siliconix
2,786 -

RFQ

SIE810DF-T1-E3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 1.4mOhm @ 25A, 10V 2V @ 250µA 300 nC @ 10 V ±12V 13000 pF @ 10 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE812DF-T1-E3

SIE812DF-T1-E3

MOSFET N-CH 40V 60A 10POLARPAK

Vishay Siliconix
3,563 -

RFQ

SIE812DF-T1-E3

Scheda tecnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.6mOhm @ 25A, 10V 3V @ 250µA 170 nC @ 10 V ±20V 8300 pF @ 20 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK72E12N1,S1X

TK72E12N1,S1X

MOSFET N CH 120V 72A TO-220

Toshiba Semiconductor and Storage
3,458 -

RFQ

TK72E12N1,S1X

Scheda tecnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 72A (Ta) 10V 4.4mOhm @ 36A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8100 pF @ 60 V - 255W (Tc) 150°C (TJ) Through Hole
IPA60R280C6XKSA1

IPA60R280C6XKSA1

MOSFET N-CH 600V 13.8A TO220-FP

Infineon Technologies
2,600 -

RFQ

IPA60R280C6XKSA1

Scheda tecnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R280E6XKSA1

IPA60R280E6XKSA1

MOSFET N-CH 600V 13.8A TO220-FP

Infineon Technologies
2,627 -

RFQ

IPA60R280E6XKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
CEDM8004VL TR PBFREE

CEDM8004VL TR PBFREE

MOSFET P-CH 30V 450MA SOT883VL

Central Semiconductor Corp
12,236 -

RFQ

CEDM8004VL TR PBFREE

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 450mA (Ta) 1.8V, 4.5V 1.1Ohm @ 430mA, 4.5V 1V @ 250µA 0.88 nC @ 4.5 V 8V 55 pF @ 25 V - 100mW (Ta) -65°C ~ 150°C (TJ) Surface Mount
RW1A013ZPT2R

RW1A013ZPT2R

MOSFET P-CH 12V 1.5A 6WEMT

Rohm Semiconductor
5,754 -

RFQ

RW1A013ZPT2R

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 1.5A (Ta) 1.5V, 4.5V 260mOhm @ 1.3A, 4.5V 1V @ 1mA 2.4 nC @ 4.5 V ±10V 290 pF @ 6 V - 400mW (Ta) 150°C (TJ) Surface Mount
PMH950UPEH

PMH950UPEH

MOSFET P-CH 20V 530MA DFN0606-3

Nexperia USA Inc.
3,630 -

RFQ

PMH950UPEH

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 530mA (Ta) 1.2V, 4.5V 1.4Ohm @ 500mA, 4.5V 0.95V @ 250µA 0.5 nC @ 4 V ±8V 36 pF @ 10 V - 370mW (Ta), 2.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SSM3J36TU,LF

SSM3J36TU,LF

MOSFET P-CH 20V 330MA UFM

Toshiba Semiconductor and Storage
2,578 -

RFQ

SSM3J36TU,LF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 330mA (Ta) 1.5V, 4.5V 1.31Ohm @ 100mA, 4.5V 1V @ 1mA 1.2 nC @ 4 V ±8V 43 pF @ 10 V - 800mW (Ta) 150°C Surface Mount
SSM3J35CTC,L3F

SSM3J35CTC,L3F

MOSFET P-CH 20V 250MA CST3C

Toshiba Semiconductor and Storage
9,880 -

RFQ

SSM3J35CTC,L3F

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 20 V 250mA (Ta) 1.2V, 4.5V 1.4Ohm @ 150mA, 4.5V 1V @ 100µA - ±10V 42 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
2SK3019-TP

2SK3019-TP

MOSFET N-CH 30V 100MA SOT523

Micro Commercial Co
2,955 -

RFQ

2SK3019-TP

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 4V, 10V 8Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 13 pF @ 5 V - 150mW (Ta) -55°C ~ 150°C (TA) Surface Mount
SSM3J46CTB(TPL3)

SSM3J46CTB(TPL3)

MOSFET P-CH 20V 2A CST3B

Toshiba Semiconductor and Storage
2,693 -

RFQ

SSM3J46CTB(TPL3)

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 103mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7 nC @ 4.5 V ±8V 290 pF @ 10 V - - 150°C (TJ) Surface Mount
PMN52XPX

PMN52XPX

MOSFET P-CH 20V 3.7A 6TSOP

Nexperia USA Inc.
1,917 -

RFQ

PMN52XPX

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 3.7A (Ta) 1.5V, 4.5V 62mOhm @ 3.7A, 4.5V 900mV @ 250µA 12 nC @ 4.5 V ±12V 763 pF @ 10 V - 530mW (Ta), 4.46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002KQBZ

2N7002KQBZ

2N7002KQB/SOT8015/DFN1110D-3

Nexperia USA Inc.
1,860 -

RFQ

2N7002KQBZ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 720mA (Ta) 4.5V, 10V 850mOhm @ 720mA, 10V 2.6V @ 250µA 0.92 nC @ 10 V ±16V 28 pF @ 30 V - 420mW (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount, Wettable Flank
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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