Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOT282L

AOT282L

MOSFET N-CH 80V 18.5A/105A TO220

Alpha & Omega Semiconductor Inc.
3,542 -

RFQ

AOT282L

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 18.5A (Ta), 105A (Tc) 6V, 10V 3.5mOhm @ 20A, 10V 3.5V @ 250µA 178 nC @ 10 V ±20V 7765 pF @ 40 V - 2.1W (Ta), 272.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPF039N08NF2SATMA1

IPF039N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-7

Infineon Technologies
3,493 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
BUK9J0R9-40HX

BUK9J0R9-40HX

BUK9J0R9-40H/SOT1023/4 LEADS

Nexperia USA Inc.
2,838 -

RFQ

BUK9J0R9-40HX

Scheda tecnica

Tape & Reel (TR) - Active - - - 220A (Tc) - - - - - - - - - -
SIHB15N65E-GE3

SIHB15N65E-GE3

MOSFET N-CH 650V 15A TO263

Vishay Siliconix
3,709 -

RFQ

SIHB15N65E-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK3004

2SK3004

MOSFET N-CH 250V 18A TO220F

Sanken
2,032 -

RFQ

2SK3004

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 18A (Ta) 10V 250mOhm @ 9A, 10V 4V @ 1mA - ±20V 850 pF @ 10 V - 35W (Tc) 150°C (TJ) Through Hole
AOTF25S65

AOTF25S65

MOSFET N-CH 650V 25A TO220-3F

Alpha & Omega Semiconductor Inc.
3,035 -

RFQ

AOTF25S65

Scheda tecnica

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 190mOhm @ 12.5A, 10V 4V @ 250µA 26.4 nC @ 10 V ±30V 1278 pF @ 100 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB180N03S4L01ATMA1

IPB180N03S4L01ATMA1

MOSFET N-CH 30V 180A TO263-7

Infineon Technologies
3,079 -

RFQ

IPB180N03S4L01ATMA1

Scheda tecnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 1.05mOhm @ 100A, 10V 2.2V @ 140µA 239 nC @ 10 V ±16V 17600 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP1N80P

IXTP1N80P

MOSFET N-CH 800V 1A TO220AB

IXYS
2,290 -

RFQ

IXTP1N80P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 800 V 1A (Tc) 10V 14Ohm @ 500mA, 10V 4V @ 50µA 9 nC @ 10 V ±20V 250 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBF30GPBF

IRFIBF30GPBF

MOSFET N-CH 900V 1.9A TO220-3

Vishay Siliconix
2,214 -

RFQ

IRFIBF30GPBF

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.9A (Tc) 10V 3.7Ohm @ 1.1A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA22N60AE-E3

SIHA22N60AE-E3

MOSFET N-CHANNEL 600V 20A TO220

Vishay Siliconix
2,199 -

RFQ

SIHA22N60AE-E3

Scheda tecnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80N04S303ATMA1

IPB80N04S303ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
2,352 -

RFQ

IPB80N04S303ATMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.2mOhm @ 80A, 10V 4V @ 120µA 110 nC @ 10 V ±20V 7300 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS86150A

FDMS86150A

FET 100V 4.85 MOHM PQFN56

onsemi
3,162 -

RFQ

FDMS86150A

Scheda tecnica

Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Ta), 60A (Tc) 6V, 10V 4.85mOhm @ 16A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 4665 pF @ 50 V - 2.7W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RJK0854DPB-WS#J5

RJK0854DPB-WS#J5

IGBT

Renesas Electronics America Inc
3,820 -

RFQ

RJK0854DPB-WS#J5

Scheda tecnica

Tray * Obsolete - - - - - - - - - - - - - -
N0435N#YW

N0435N#YW

MOSFET N-CHANNEL

Renesas Electronics America Inc
3,908 -

RFQ

Tray * Obsolete - - - - - - - - - - - - - -
RJK0349DSP-WS#J0

RJK0349DSP-WS#J0

IGBT

Renesas Electronics America Inc
2,082 -

RFQ

Tray * Obsolete - - - - - - - - - - - - - -
RJK0658DPA-WS#J5A

RJK0658DPA-WS#J5A

IGBT

Renesas Electronics America Inc
2,684 -

RFQ

Tray * Obsolete - - - - - - - - - - - - - -
N0609N-S19-AY#YW

N0609N-S19-AY#YW

MOSFET N-CHANNEL

Renesas Electronics America Inc
3,176 -

RFQ

Tray * Obsolete - - - - - - - - - - - - - -
RJK0852DPB-WS#J5

RJK0852DPB-WS#J5

IGBT

Renesas Electronics America Inc
3,829 -

RFQ

Tray * Obsolete - - - - - - - - - - - - - -
RJK0393DPA-WS#J5A

RJK0393DPA-WS#J5A

IGBT

Renesas Electronics America Inc
3,616 -

RFQ

RJK0393DPA-WS#J5A

Scheda tecnica

Tray * Obsolete - - - - - - - - - - - - - -
N0436N#YW

N0436N#YW

MOSFET N-CHANNEL

Renesas Electronics America Inc
2,593 -

RFQ

Tray * Obsolete - - - - - - - - - - - - - -
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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