Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6520ENZC8

R6520ENZC8

MOSFET N-CH 650V 20A TO3

Rohm Semiconductor
2,839 -

RFQ

R6520ENZC8

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 4V @ 630µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 68W (Tc) 150°C (TJ) Through Hole
R6515ENZC8

R6515ENZC8

MOSFET N-CH 650V 15A TO3

Rohm Semiconductor
2,386 -

RFQ

R6515ENZC8

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 4V @ 430µA 40 nC @ 10 V ±20V 910 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
TPH3206LSGB

TPH3206LSGB

GANFET N-CH 650V 16A 3PQFN

Transphorm
3,413 -

RFQ

TPH3206LSGB

Scheda tecnica

Tray - Obsolete N-Channel GaNFET (Gallium Nitride) 650 V 16A (Tc) 8V 180mOhm @ 10A, 8V 2.6V @ 500µA 6.2 nC @ 4.5 V ±18V 720 pF @ 480 V - 81W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STW26N65DM2

STW26N65DM2

MOSFET N-CH 650V 20A TO247

STMicroelectronics
2,878 -

RFQ

STW26N65DM2

Scheda tecnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 35.5 nC @ 10 V ±25V 1480 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB040N08NF2SATMA1

IPB040N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies
3,998 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
SQM120N04-1M9_GE3

SQM120N04-1M9_GE3

MOSFET N-CH 40V 120A TO263

Vishay Siliconix
3,354 -

RFQ

SQM120N04-1M9_GE3

Scheda tecnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.9mOhm @ 30A, 10V 3.5V @ 250µA 270 nC @ 10 V ±20V 8790 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB3006GPBF

IRFB3006GPBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies
2,775 -

RFQ

IRFB3006GPBF

Scheda tecnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB6N80TM

FQB6N80TM

MOSFET N-CH 800V 5.8A D2PAK

onsemi
3,901 -

RFQ

FQB6N80TM

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.8A (Tc) 10V 1.95Ohm @ 2.9A, 10V 5V @ 250µA 31 nC @ 10 V ±30V 1500 pF @ 25 V - 3.13W (Ta), 158W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK3700(F)

2SK3700(F)

MOSFET N-CH 900V 5A TO3P

Toshiba Semiconductor and Storage
3,816 -

RFQ

2SK3700(F)

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 900 V 5A (Ta) - 2.5Ohm @ 3A, 10V 4V @ 1mA 28 nC @ 10 V - 1150 pF @ 25 V - 150W (Tc) 150°C (TJ) Through Hole
STL26N65DM2

STL26N65DM2

MOSFET N-CH 650V 20A PWRFLAT HV

STMicroelectronics
2,753 -

RFQ

STL26N65DM2

Scheda tecnica

Tape & Reel (TR) MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 206mOhm @ 10A, 10V 5V @ 250µA 35.5 nC @ 10 V ±25V 1480 pF @ 100 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL19N60M6

STL19N60M6

MOSFET N-CH 600V 11A PWRFLAT HV

STMicroelectronics
2,319 -

RFQ

Tape & Reel (TR) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 308mOhm @ 6.5A, 10V 4.75V @ 250µA 16.8 nC @ 10 V ±25V 650 pF @ 100 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP22N60AE-GE3

SIHP22N60AE-GE3

MOSFET N-CH 600V 20A TO220AB

Vishay Siliconix
3,335 -

RFQ

SIHP22N60AE-GE3

Scheda tecnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL7730PBF

IRFSL7730PBF

MOSFET N-CH 75V 195A TO262

Infineon Technologies
3,720 -

RFQ

IRFSL7730PBF

Scheda tecnica

Bulk,Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.7V @ 250µA 407 nC @ 10 V ±20V 13660 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
FKP252

FKP252

MOSFET N-CH 250V 25A TO220F

Sanken
2,593 -

RFQ

FKP252

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 25A (Ta) 10V 75mOhm @ 12A, 10V 4.5V @ 1mA - ±30V 2000 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
NTMYS9D3N06CLTWG

NTMYS9D3N06CLTWG

MOSFET N-CH 60V T6 LFPAK4

onsemi
3,805 -

RFQ

Tape & Reel (TR) - Active - - - 14A (Ta), 50A (Tc) - - - - - - - - - -
IPL60R225CFD7AUMA1

IPL60R225CFD7AUMA1

MOSFET N-CH 650V 12A VSON-4-1

Infineon Technologies
3,245 -

RFQ

IPL60R225CFD7AUMA1

Scheda tecnica

Tape & Reel (TR) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 225mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 68W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP80N08S406AKSA1

IPP80N08S406AKSA1

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies
47,700 -

RFQ

IPP80N08S406AKSA1

Scheda tecnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 10V 5.8mOhm @ 80A, 10V 4V @ 90µA 70 nC @ 10 V ±20V 4800 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRL7736M2TR

AUIRL7736M2TR

MOSFET N-CH 40V 179A DIRECTFET

Infineon Technologies
2,809 -

RFQ

AUIRL7736M2TR

Scheda tecnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 179A (Tc) 4.5V, 10V 3mOhm @ 67A, 10V 2.5V @ 150µA 78 nC @ 4.5 V ±16V 5055 pF @ 25 V - 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOWF25S65

AOWF25S65

MOSFET N-CH 650V 25A TO262F

Alpha & Omega Semiconductor Inc.
2,311 -

RFQ

AOWF25S65

Scheda tecnica

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 190mOhm @ 12.5A, 10V 4V @ 250µA 26.4 nC @ 10 V ±30V 1278 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
STH170N8F7-2

STH170N8F7-2

MOSFET N-CH 80V 120A H2PAK-2

STMicroelectronics
3,126 -

RFQ

STH170N8F7-2

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.7mOhm @ 60A, 10V 4.5V @ 250µA 120 nC @ 10 V ±20V 8710 pF @ 40 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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