Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FCA16N60N

FCA16N60N

MOSFET N-CH 600V TO-3PN

onsemi
3,695 -

RFQ

FCA16N60N

Scheda tecnica

Tube * Last Time Buy - - - - - - - - - - - - - -
FQA90N15-F109

FQA90N15-F109

MOSFET N-CH 150V 90A TO3PN

onsemi
2,491 -

RFQ

FQA90N15-F109

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 90A (Tc) 10V 18mOhm @ 45A, 10V 4V @ 250µA 285 nC @ 10 V ±25V 8700 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
STMFS5C609NLT1G

STMFS5C609NLT1G

TRENCHFET 60V N-CH TRENCH

onsemi
3,372 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
IPI041N12N3GAKSA1

IPI041N12N3GAKSA1

MOSFET N-CH 120V 120A TO262-3

Infineon Technologies
3,386 -

RFQ

IPI041N12N3GAKSA1

Scheda tecnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 120A (Tc) 10V 4.1mOhm @ 100A, 10V 4V @ 270µA 211 nC @ 10 V ±20V 13800 pF @ 60 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG28N65EF-GE3

SIHG28N65EF-GE3

MOSFET N-CH 650V 28A TO247AC

Vishay Siliconix
2,812 -

RFQ

SIHG28N65EF-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 146 nC @ 10 V ±30V 3249 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS4310TRL

AUIRFS4310TRL

MOSFET N-CH 100V 75A D2PAK

Infineon Technologies
3,904 -

RFQ

AUIRFS4310TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP20N60CFDXKSA1

SPP20N60CFDXKSA1

MOSFET N-CH 650V 20.7A TO220-3

Infineon Technologies
3,086 -

RFQ

SPP20N60CFDXKSA1

Scheda tecnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 220mOhm @ 13.1A, 10V 5V @ 1mA 124 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA20N60CFDXKSA1

SPA20N60CFDXKSA1

MOSFET N-CH 600V 20.7A TO220-FP

Infineon Technologies
3,715 -

RFQ

SPA20N60CFDXKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.7A (Tc) 10V 220mOhm @ 13.1A, 10V 5V @ 1mA 124 nC @ 10 V ±20V 2400 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUT300N10S5N014ATMA1

IAUT300N10S5N014ATMA1

MOSFET_(75V 120V( PG-HSOF-8

Infineon Technologies
3,318 -

RFQ

IAUT300N10S5N014ATMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 360A (Tj) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 275µA 216 nC @ 10 V ±20V 16011 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA90R340C3XKSA2

IPA90R340C3XKSA2

MOSFET N-CH 900V 15A TO220

Infineon Technologies
3,443 -

RFQ

IPA90R340C3XKSA2

Scheda tecnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R340C3XKSA2

IPI90R340C3XKSA2

MOSFET N-CH 900V 15A TO262-3

Infineon Technologies
3,264 -

RFQ

IPI90R340C3XKSA2

Scheda tecnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP90R340C3XKSA2

IPP90R340C3XKSA2

MOSFET N-CH 900V 15A TO220-3

Infineon Technologies
3,992 -

RFQ

IPP90R340C3XKSA2

Scheda tecnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA10N80P

IXFA10N80P

MOSFET N-CH 800V 10A TO263

IXYS
2,165 -

RFQ

IXFA10N80P

Scheda tecnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6024KNZ4C13

R6024KNZ4C13

MOSFET N-CH 600V 24A TO247

Rohm Semiconductor
2,848 -

RFQ

R6024KNZ4C13

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 45 nC @ 10 V ±20V 2000 pF @ 25 V - 245W (Tc) 150°C (TJ) Through Hole
AUIRFS3004-7TRL

AUIRFS3004-7TRL

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,749 -

RFQ

AUIRFS3004-7TRL

Scheda tecnica

Tape & Reel (TR),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.25mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9130 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL40T209ATMA1

IRL40T209ATMA1

MOSFET N-CH 40V 300A 8HSOF

Infineon Technologies
2,197 -

RFQ

IRL40T209ATMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 4.5V, 10V 0.72mOhm @ 100A, 10V 2.4V @ 250µA 269 nC @ 4.5 V ±20V 16000 pF @ 20 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMNR90-40SSHJ

PSMNR90-40SSHJ

MOSFET N-CH 40V 375A LFPAK88

Nexperia USA Inc.
2,997 -

RFQ

PSMNR90-40SSHJ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 375A (Ta) 10V 0.9mOhm @ 25A, 10V 3.6V @ 1mA 166 nC @ 10 V ±20V 12888 pF @ 25 V Schottky Diode (Body) 375W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FCH170N60

FCH170N60

MOSFET N-CH 600V 22A TO247-3

onsemi
3,741 -

RFQ

FCH170N60

Scheda tecnica

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 170mOhm @ 11A, 10V 3.5V @ 250µA 55 nC @ 10 V ±20V 2860 pF @ 380 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS3004TRL

AUIRFS3004TRL

MOSFET N-CH 40V 195A D2PAK-3

Infineon Technologies
2,114 -

RFQ

AUIRFS3004TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STL33N65M2

STL33N65M2

MOSFET N-CH 650V 20A PWRFLAT HV

STMicroelectronics
3,373 -

RFQ

STL33N65M2

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 154mOhm @ 10A, 10V 4V @ 250µA 41.5 nC @ 10 V ±25V 1790 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente