Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
G11S

G11S

P-20V,RD(MAX)<[email protected],RD(MAX

Goford Semiconductor
4,000 -

RFQ

G11S

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) G Active P-Channel MOSFET (Metal Oxide) 20 V 11A (Tc) 2.5V, 4.5V 18.4mOhm @ 1A, 4.5V 1.1V @ 250µA 47 nC @ 10 V ±12V 2455 pF @ 10 V - 3.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STWA48N60M6

STWA48N60M6

MOSFET N-CH 600V 39A TO247

STMicroelectronics
3,692 -

RFQ

STWA48N60M6

Scheda tecnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 69mOhm @ 19.5A, 10V 4.75V @ 250µA 57 nC @ 10 V ±25V 2578 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
G28N03D3

G28N03D3

N30V,RD(MAX)<12M@10V,RD(MAX)<18M

Goford Semiconductor
5,000 -

RFQ

G28N03D3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Tc) 4.5V, 10V 12mOhm @ 16A, 10V 2.5V @ 250µA 15 nC @ 10 V ±20V 891 pF @ 15 V - 20.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF7799L2TR

AUIRF7799L2TR

MOSFET N-CH 250V 375A DIRECTFET

Infineon Technologies
2,128 -

RFQ

AUIRF7799L2TR

Scheda tecnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 375A (Tc) 10V 38mOhm @ 21A, 10V 5V @ 250µA 165 nC @ 10 V ±30V 6714 pF @ 25 V - 4.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTND31211PZTAG

NTND31211PZTAG

NTND31211PZ - DUAL P-CHANNEL SMA

onsemi
615,449 -

RFQ

NTND31211PZTAG

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
APT30F50S

APT30F50S

MOSFET N-CH 500V 30A D3PAK

Microchip Technology
3,564 -

RFQ

APT30F50S

Scheda tecnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 190mOhm @ 14A, 10V 5V @ 1mA 115 nC @ 10 V ±30V 4525 pF @ 25 V - 415W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTND31200PZTAG

NTND31200PZTAG

NTND31200PZ - DUAL, P-CHANNELL S

onsemi
316,000 -

RFQ

NTND31200PZTAG

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
NTND31215CZTAG

NTND31215CZTAG

NTND31215 - COMPLEMENTARY, SMALL

onsemi
40,000 -

RFQ

NTND31215CZTAG

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
G08N06S

G08N06S

N60V, RD(MAX)<30M@10V,RD(MAX)<40

Goford Semiconductor
4,000 -

RFQ

G08N06S

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) G Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4.5V, 10V 30mOhm @ 3A, 10V 2.5V @ 250µA 22 nC @ 10 V ±20V 979 pF @ 30 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMCM4401VPEZ

PMCM4401VPEZ

NEXPERIA PMCM4401VPE - 12V, P-CH

NXP Semiconductors
163,121 -

RFQ

PMCM4401VPEZ

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 3.9A (Ta) 1.8V, 4.5V 65mOhm @ 3A, 4.5V 900mV @ 250µA 10 nC @ 4.5 V ±8V 415 pF @ 6 V - 400mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMPB33XN,115

PMPB33XN,115

MOSFET N-CH 30V 4.3A DFN2020MD-6

NXP USA Inc.
141,074 -

RFQ

PMPB33XN,115

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta) 2.5V, 4.5V 47mOhm @ 4.3A, 4.5V 1.2V @ 250µA 7.6 nC @ 4.5 V ±12V 505 pF @ 15 V - 1.5W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH300N04T2

IXTH300N04T2

MOSFET N-CH 40V 300A TO247

IXYS
3,438 -

RFQ

IXTH300N04T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 2.5mOhm @ 50A, 10V 4V @ 250µA 145 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
MMBF4091

MMBF4091

MMBF4091 - N-CHANNEL SWITCH

Fairchild Semiconductor
73,480 -

RFQ

MMBF4091

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IXFP30N25X3M

IXFP30N25X3M

MOSFET N-CH 250V 30A TO220

IXYS
2,496 -

RFQ

IXFP30N25X3M

Scheda tecnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 60mOhm @ 15A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1450 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
5LP01S-TL-E

5LP01S-TL-E

5LP01S - P-CHANNEL SMALL SIGNAL

onsemi
51,473 -

RFQ

5LP01S-TL-E

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 50 V 70mA (Ta) 1.5V, 4V 23Ohm @ 40mA, 4V - 1.4 nC @ 10 V ±10V 7400 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
IXFA6N120P-TRL

IXFA6N120P-TRL

MOSFET N-CH 1200V 6A TO263

IXYS
2,166 -

RFQ

IXFA6N120P-TRL

Scheda tecnica

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PBHV9115TLH215

PBHV9115TLH215

NEXPERIA PBHV9115T - SMALL SIGNA

NXP Semiconductors
12,000 -

RFQ

PBHV9115TLH215

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPDQ60R075CFD7XTMA1

IPDQ60R075CFD7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies
3,344 -

RFQ

Tape & Reel (TR) CoolMOS™ Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - Surface Mount
MMBF5458

MMBF5458

N-CHANNEL GENERAL PURPOSE AMPLIF

onsemi
5,550 -

RFQ

MMBF5458

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
BSS84

BSS84

MOSFET SOT-23 P Channel 50V

MDD
252,000 -

RFQ

BSS84

Scheda tecnica

Tape & Reel (TR) SOT-23 Active P-Channel MOSFET (Metal Oxide) 50 V 130mA (Ta) 5V, 10V 8Ohm @ 100mA, 10V 2V @ 250µA 1.77 nC @ 10 V ±20V 30 pF @ 5 V - 225mW (Ta) -55°C ~ 150°C Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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