Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMC86244-L701

FDMC86244-L701

FET 150V 134.0 MOHM MLP33

onsemi
3,667 -

RFQ

FDMC86244-L701

Scheda tecnica

Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 2.8A (Ta), 9.4A (Tc) 6V, 10V 134mOhm @ 2.8A, 10V 4V @ 250µA 5.9 nC @ 10 V ±20V 345 pF @ 75 V - 2.3W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS86369

FDMS86369

FET 80V 7.5MOHM PQFN8

onsemi
3,593 -

RFQ

Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 65A (Tc) 10V 7.5mOhm @ 65A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 2470 pF @ 40 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDS8433A-G

FDS8433A-G

FDS8433A - MOSFET 20V 47.0 MOHM

Fairchild Semiconductor
723,388 -

RFQ

FDS8433A-G

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
PJA3438-AU_R1_000A1

PJA3438-AU_R1_000A1

SOT-23, MOSFET

Panjit International Inc.
2,877 -

RFQ

PJA3438-AU_R1_000A1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 50 V 500mA (Ta) 1.8V, 10V 1.45Ohm @ 500mA, 10V 1V @ 250µA 0.95 nC @ 4.5 V ±20V 36 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJA3436_R1_00001

PJA3436_R1_00001

SOT-23, MOSFET

Panjit International Inc.
2,453 -

RFQ

PJA3436_R1_00001

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 1.8V, 4.5V 380mOhm @ 1.2A, 4.5V 1V @ 250µA 0.9 nC @ 4.5 V ±12V 39 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G1003B

G1003B

N100V,RD(MAX)<170M@10V,RD(MAX)<1

Goford Semiconductor
2,352 -

RFQ

G1003B

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 3A - 130mOhm @ 1A, 10V 2V @ 250µA 30 nC @ 10 V ±20V 760 pF @ 50 V - 3.3W -55°C ~ 150°C (TJ) Surface Mount
HAT2196C-EL-E

HAT2196C-EL-E

HAT2196C - N-CHANNEL POWER MOSFE

Renesas
18,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 2.5V, 4.5V 58mOhm @ 1.3A, 4.5V 1.4V @ 1mA 2.8 nC @ 4.5 V ±12V 270 pF @ 10 V - 850mW (Ta) 150°C Surface Mount
BSZ130N03MSG

BSZ130N03MSG

BSZ130N03 - 12V-300V N-CHANNEL P

Infineon Technologies
1,312 -

RFQ

BSZ130N03MSG

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
45P40

45P40

P40V,RD(MAX)<14M@-10V,VTH2V~3V T

Goford Semiconductor
9,690 -

RFQ

45P40

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 10V 14mOhm @ 20A, 10V 2.5V @ 250µA 42 nC @ 10 V ±20V 2960 pF @ 20 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
18N20

18N20

N 200V, RD(MAX)<0.16@10V,VTH1.0V

Goford Semiconductor
2,500 -

RFQ

18N20

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) 18N20 Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tj) 10V 160mOhm @ 9A, 10V 3V @ 250µA 17.7 nC @ 10 V ±30V 836 pF @ 25 V - 65.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDZ663P

FDZ663P

FDZ663P - FDZ663P - MOSFET P-CHA

Fairchild Semiconductor
60,000 -

RFQ

FDZ663P

Scheda tecnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Ta) 1.5V, 4.5V 134mOhm @ 2A, 4.5V 1.2V @ 250µA 8.2 nC @ 4.5 V ±8V 525 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NVH4L075N065SC1

NVH4L075N065SC1

SIC MOS TO247-4L 650V

onsemi
2,612 -

RFQ

NVH4L075N065SC1

Scheda tecnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 18V 85mOhm @ 15A, 18V 4.3V @ 5mA 61 nC @ 18 V +22V, -8V 1196 pF @ 325 V - 148W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVH4L050N65S3F

NVH4L050N65S3F

SF3 FRFET AUTO 50MOHM TO-247-4L

onsemi
3,783 -

RFQ

NVH4L050N65S3F

Scheda tecnica

Tray SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 123.8 nC @ 10 V ±30V 4855 pF @ 400 V - 403W (Tc) -55°C ~ 150°C (TJ) Through Hole
IGLD60R190D1SAUMA1

IGLD60R190D1SAUMA1

GAN HV PG-LSON-8

Infineon Technologies
3,077 -

RFQ

Tape & Reel (TR) CoolGaN™ Active N-Channel GaNFET (Gallium Nitride) 600 V 10A (Tc) - - 1.6V @ 960µA - -10V 157 pF @ 400 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDCTR5065A

NDCTR5065A

MOSFET N-CH 650V 50A SMD

onsemi
2,035 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
APT5024BLLG

APT5024BLLG

MOSFET N-CH 500V 22A TO247

Microchip Technology
2,946 -

RFQ

APT5024BLLG

Scheda tecnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 240mOhm @ 11A, 10V 5V @ 1mA 43 nC @ 10 V ±30V 1900 pF @ 25 V - 265W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT50N60P3-TRL

IXFT50N60P3-TRL

MOSFET N-CH 600V 50A TO268

IXYS
2,623 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 145mOhm @ 25A, 10V 5V @ 4mA 94 nC @ 10 V ±30V 6300 pF @ 25 V - 1.04kW (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT52N50P2

IXFT52N50P2

MOSFET N-CH 500V 52A TO268

IXYS
2,278 -

RFQ

IXFT52N50P2

Scheda tecnica

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 52A (Tc) 10V 120mOhm @ 26A, 10V 4.5V @ 4mA 113 nC @ 10 V ±30V 6800 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP36N55X2

IXFP36N55X2

IXFP36N55X2

IXYS
3,521 -

RFQ

Tube HiPerFET™, Ultra X2 Active - - - - - - - - - - - - - -
IXTQ130N20T

IXTQ130N20T

MOSFET N-CH 200V 130A TO3P

IXYS
2,769 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 130A (Tc) 10V 16mOhm @ 65A, 10V 5V @ 1mA 150 nC @ 10 V ±20V 8800 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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