Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
4435

4435

P30V,RD(MAX)<20M@-10V,RD(MAX)<33

Goford Semiconductor
3,929 -

RFQ

4435

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 11A - 20mOhm @ 10A, 10V 2.5V @ 250µA 40 nC @ 10 V ±20V 2270 pF @ 15 V - 2.5W -55°C ~ 150°C (TJ) Surface Mount
AUIRLU024Z

AUIRLU024Z

MOSFET N-CH 55V 16A I-PAK

International Rectifier
13,425 -

RFQ

AUIRLU024Z

Scheda tecnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V 3V @ 250µA 9.9 nC @ 5 V ±16V 380 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLTS6342TRPBF

IRLTS6342TRPBF

MOSFET N-CH 30V 8.3A 6TSOP

Infineon Technologies
2,377 -

RFQ

IRLTS6342TRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 2.5V, 4.5V 17.5mOhm @ 8.3A, 4.5V 1.1V @ 10µA 11 nC @ 4.5 V ±12V 1010 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G15N06K

G15N06K

N-CH, 60V,15A,RD(MAX)<45M@10V,RD

Goford Semiconductor
2,326 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 4.5V, 10V 45mOhm @ 8A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 763 pF @ 30 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS8876

FDS8876

MOSFET N-CH 30V 12.5A 8SOIC

Fairchild Semiconductor
615,441 -

RFQ

FDS8876

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 8.2mOhm @ 12.5A, 10V 2.5V @ 250µA 36 nC @ 10 V ±20V 1650 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SK2857-T1-AZ

2SK2857-T1-AZ

2SK2857-T1-AZ - N-CHANNEL MOSFET

Renesas
16,591 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 4A (Ta) 4V, 10V 150mOhm @ 2.5A, 10V 2V @ 1mA 10.6 nC @ 10 V ±20V 265 pF @ 10 V - 2W (Ta) 150°C Surface Mount
CMS45N10H8-HF

CMS45N10H8-HF

MOSFET

Comchip Technology
3,938 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
CMS42N10H8-HF

CMS42N10H8-HF

MOSFET

Comchip Technology
2,062 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 6.6A (Ta) 4.5V, 10V 60mOhm @ 3.2A, 10V 2.5V @ 250µA 34 nC @ 10 V ±20V 1325 pF @ 30 V - 3.6W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CMS10N10Q8-HF

CMS10N10Q8-HF

MOSFET

Comchip Technology
2,496 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta) 4.5V, 10V 25.5mOhm @ 10A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1519 pF @ 30 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMN26D0UFB4-7B

DMN26D0UFB4-7B

DIODE

Diodes Incorporated
2,293 -

RFQ

DMN26D0UFB4-7B

Scheda tecnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 240mA (Ta) 1.5V, 4.5V 3Ohm @ 100mA, 4.5V 900mV @ 250µA - ±10V 14.1 pF @ 15 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002E-7-F-79

2N7002E-7-F-79

DIODE

Diodes Incorporated
3,977 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 250mA (Ta) 4.5V, 10V 3Ohm @ 250mA, 10V 2.5V @ 250µA 0.23 nC @ 4.5 V ±20V 50 pF @ 25 V - 370mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002-13-F-79

2N7002-13-F-79

DIODE

Diodes Incorporated
3,009 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 250µA 0.23 nC @ 4.5 V ±20V 50 pF @ 25 V - 370mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP2004KQ-7

DMP2004KQ-7

DIODE

Diodes Incorporated
3,111 -

RFQ

DMP2004KQ-7

Scheda tecnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 600mA (Ta) 1.8V, 4.5V 900mOhm @ 430mA, 4.5V 1V @ 250µA - ±8V 175 pF @ 16 V - 550mW -55°C ~ 150°C (TJ) Surface Mount
DMP2004TK-7-79

DMP2004TK-7-79

DIODE

Diodes Incorporated
2,530 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 430mA (Ta) 1.8V, 4.5V 1.1Ohm @ 430mA, 4.5V 1V @ 250µA 0.97 nC @ 8 V ±8V 47 pF @ 16 V - 230mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002W-7-F-79

2N7002W-7-F-79

DIODE

Diodes Incorporated
3,318 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 50mA, 5V 2V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138-7-F-79

BSS138-7-F-79

DIODE

Diodes Incorporated
3,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138W-7-F-79

BSS138W-7-F-79

DIODE

Diodes Incorporated
3,044 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002T-7-F-79

2N7002T-7-F-79

DIODE

Diodes Incorporated
2,222 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 50mA, 5V 2V @ 250µA - ±20V 50 pF @ 25 V - 150mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMN2025U

DMN2025U

DIODE

Diodes Incorporated
3,979 -

RFQ

DMN2025U

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 5.6A (Ta) 1.8V, 4.5V 27mOhm @ 6.5A, 4.5V 900mV @ 250µA 5.9 nC @ 4.5 V ±12V 485 pF @ 10 V - 800mW -55°C ~ 150°C (TJ) Surface Mount
2N7002-13-F

2N7002-13-F

DIODE

Diodes Incorporated
3,228 -

RFQ

2N7002-13-F

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 250µA 0.23 nC @ 4.5 V ±20V 50 pF @ 25 V - 370mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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