Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
CPH3442-TL-E

CPH3442-TL-E

MOSFET N-CH 30V 6.5A 3CPH

Sanyo
2,528 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) - 24mOhm @ 3A, 4V - 16.1 nC @ 4 V - 1295 pF @ 10 V - 1.2W (Ta) 150°C (TJ) Surface Mount
1IRF3710PBF

1IRF3710PBF

IRF3710 - 100V HEXFET N-CHANNEL

Infineon Technologies
3,272 -

RFQ

1IRF3710PBF

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFS8408-7TRL

AUIRFS8408-7TRL

MOSFET N-CH 40V 240A D2PAK

International Rectifier
2,778 -

RFQ

AUIRFS8408-7TRL

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS214NWH6327

BSS214NWH6327

BSS214 - 250V-600V SMALL SIGNAL

Infineon Technologies
2,071 -

RFQ

BSS214NWH6327

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFB3207

AUIRFB3207

MOSFET N-CH 75V 75A TO220AB

International Rectifier
2,021 -

RFQ

AUIRFB3207

Scheda tecnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFSL8407

AUIRFSL8407

MOSFET N-CH 40V 195A TO262

International Rectifier
3,894 -

RFQ

AUIRFSL8407

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLS4030TRL

AUIRLS4030TRL

MOSFET N-CH 100V 180A D2PAK

International Rectifier
3,406 -

RFQ

AUIRLS4030TRL

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC042N03LSG

BSC042N03LSG

BSC042N03 - 12V-300V N-CHANNEL P

Infineon Technologies
3,349 -

RFQ

BSC042N03LSG

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
AUIRF1010EZS

AUIRF1010EZS

MOSFET N-CH 60V 75A D2PAK

International Rectifier
2,527 -

RFQ

AUIRF1010EZS

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 250µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9231

IRF9231

6.5A, 150V, 0.8OHM, P-CHANNEL PO

International Rectifier
2,587 -

RFQ

IRF9231

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPW60R099CP

IPW60R099CP

MOSFET N-CH 600V 31A TO247-3-1

Infineon Technologies
3,355 -

RFQ

IPW60R099CP

Scheda tecnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) - 99mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB024N06

FDB024N06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,015 -

RFQ

FDB024N06

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 75A, 10V 4.5V @ 250µA 226 nC @ 10 V ±20V 14885 pF @ 25 V - 395W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK961R6-40E,118

BUK961R6-40E,118

120A, 40V, 0.0016OHM, N-CHANNEL

NXP USA Inc.
3,007 -

RFQ

BUK961R6-40E,118

Scheda tecnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V 1.4mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 16400 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP2D3N10C

FDP2D3N10C

N-CHANNEL SHIELDED GATE POWERTRE

Fairchild Semiconductor
3,992 -

RFQ

FDP2D3N10C

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 222A (Tc) 10V 2.3mOhm @ 100A, 10V 4V @ 700µA 152 nC @ 10 V ±20V 11180 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH7004TRPBF

IRFH7004TRPBF

IRFH7004 - 12V-300V N-CHANNEL PO

International Rectifier
2,939 -

RFQ

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.9V @ 150µA 194 nC @ 10 V ±20V 6419 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF12N50UT

FDPF12N50UT

MOSFET N-CH 500V 10A TO220F

Fairchild Semiconductor
2,719 -

RFQ

FDPF12N50UT

Scheda tecnica

Bulk FRFET® Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 800mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1395 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N7000-D74Z

2N7000-D74Z

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
2,776 -

RFQ

2N7000-D74Z

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 50 pF @ 25 V - 400mW (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFB4310PBF

IRFB4310PBF

IRFB4310 - 12V-300V N-CHANNEL PO

International Rectifier
3,725 -

RFQ

IRFB4310PBF

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSO201SPH

BSO201SPH

BSO201 - 20V-250V P-CHANNEL POWE

Infineon Technologies
2,299 -

RFQ

BSO201SPH

Scheda tecnica

Bulk SIPMOS® Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 2.5V, 4.5V 8mOhm @ 14.9A, 4.5V 1.2V @ 250µA 88 nC @ 4.5 V ±12V 9600 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFP4568-E

AUIRFP4568-E

MOSFET N-CH 150V 171A TO247AD

International Rectifier
2,316 -

RFQ

AUIRFP4568-E

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 171A (Tc) 10V 5.9mOhm @ 103A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 10470 pF @ 50 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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