Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ECH8607-TL-E

ECH8607-TL-E

N-CHANNEL SILICON MOSFET

onsemi
3,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQB3N30TM

FQB3N30TM

MOSFET N-CH 300V 3.2A D2PAK

Fairchild Semiconductor
2,934 -

RFQ

FQB3N30TM

Scheda tecnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 3.2A (Tc) 10V 2.2Ohm @ 1.6A, 10V 5V @ 250µA 7 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75332S3S

HUF75332S3S

N-CHANNEL POWER MOSFET

Harris Corporation
2,788 -

RFQ

HUF75332S3S

Scheda tecnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 52A (Tc) 10V 19mOhm @ 52A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP5N30

FQP5N30

MOSFET N-CH 300V 5.4A TO220-3

Fairchild Semiconductor
2,635 -

RFQ

FQP5N30

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 5.4A (Tc) 10V 900mOhm @ 2.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
HAT1142R02-EL-E

HAT1142R02-EL-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF823

IRF823

N-CHANNEL POWER MOSFET

Harris Corporation
2,284 -

RFQ

IRF823

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.2A (Tc) 10V 4Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD4N50TF

FQD4N50TF

MOSFET N-CH 500V 2.6A DPAK

Fairchild Semiconductor
2,258 -

RFQ

FQD4N50TF

Scheda tecnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.6A (Tc) 10V 2.7Ohm @ 1.3A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQI7P06TU

FQI7P06TU

MOSFET P-CH 60V 7A I2PAK

Fairchild Semiconductor
2,199 -

RFQ

FQI7P06TU

Scheda tecnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 10V 410mOhm @ 3.5A, 10V 4V @ 250µA 8.2 nC @ 10 V ±25V 295 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3818-DL-E

2SK3818-DL-E

N-CHANNEL SILICON MOSFET

Sanyo
2,000 -

RFQ

2SK3818-DL-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
FQPF10N20

FQPF10N20

MOSFET N-CH 200V 6.8A TO220F

Fairchild Semiconductor
1,616 -

RFQ

FQPF10N20

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 6.8A (Tc) 10V 360mOhm @ 3.4A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 670 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF3N40

FQPF3N40

MOSFET N-CH 400V 1.6A TO220F

Fairchild Semiconductor
1,544 -

RFQ

FQPF3N40

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.6A (Tc) 10V 3.4Ohm @ 800mA, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP23N06LE

RFP23N06LE

N-CHANNEL, MOSFET

Harris Corporation
1,486 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRLR024ZTRL

AUIRLR024ZTRL

MOSFET N-CH 55V 16A DPAK

International Rectifier
1,387 -

RFQ

AUIRLR024ZTRL

Scheda tecnica

Bulk Automotive, AEC-Q101, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 16A (Tc) - 58mOhm @ 9.6A, 10V 3V @ 250µA 9.9 nC @ 5 V ±16V 380 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9622

IRF9622

P-CHANNEL POWER MOSFET

Harris Corporation
1,128 -

RFQ

IRF9622

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 3A (Tc) 10V 2.4Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR221

IRFR221

N-CHANNEL POWER MOSFET

Harris Corporation
1,075 -

RFQ

IRFR221

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4.6A (Tc) 10V 800mOhm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPI80N04S3-06

IPI80N04S3-06

N-CHANNEL POWER MOSFET

Infineon Technologies
1,050 -

RFQ

IPI80N04S3-06

Scheda tecnica

Bulk * Obsolete - - - - - - - - - - - - - -
IRFR421

IRFR421

N-CHANNEL POWER MOSFET

Harris Corporation
1,000 -

RFQ

IRFR421

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.5A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DIT090N06

DIT090N06

MOSFET N-CH 65V 90A TO220AB

Diotec Semiconductor
1,000 -

RFQ

DIT090N06

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 65 V 90A (Tc) 10V 7mOhm @ 30A, 10V 4V @ 250µA 94 nC @ 10 V ±20V 3400 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU422

IRFU422

N-CHANNEL POWER MOSFET

Harris Corporation
1,000 -

RFQ

IRFU422

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPB03N60S5

SPB03N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
1,000 -

RFQ

SPB03N60S5

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 1617181920212223...2123Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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