Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI041N12N3G

IPI041N12N3G

IPI041N12 - 12V-300V N-CHANNEL P

Infineon Technologies
2,402 -

RFQ

IPI041N12N3G

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFS3107-7TRL

AUIRFS3107-7TRL

MOSFET N-CH 75V 240A D2PAK

International Rectifier
2,046 -

RFQ

AUIRFS3107-7TRL

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) - 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V - 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R125C6

IPP60R125C6

POWER FIELD-EFFECT TRANSISTOR, 3

Infineon Technologies
3,024 -

RFQ

IPP60R125C6

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
BSS84AKW

BSS84AKW

NOW NEXPERIA BSS84AKW - SMALL SI

Nexperia USA Inc.
2,983 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
PMZB350UPE,315

PMZB350UPE,315

NOW NEXPERIA PMZB350UPE - SMALL

NXP USA Inc.
3,845 -

RFQ

PMZB350UPE,315

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.8V, 4.5V 450mOhm @ 300mA, 4.5V 950mV @ 250µA 1.9 nC @ 4.5 V ±8V 127 pF @ 10 V - 360mW (Ta), 3.125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDM3622

FDM3622

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
2,273 -

RFQ

FDM3622

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 4.4A (Ta) 6V, 10V 60mOhm @ 4.4A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 1090 pF @ 25 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF7799L2TR

AUIRF7799L2TR

MOSFET N-CH 250V 375A DIRECTFT

International Rectifier
3,830 -

RFQ

AUIRF7799L2TR

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 375A (Tc) 10V 38mOhm @ 21A, 10V 5V @ 250µA 165 nC @ 10 V ±30V 6714 pF @ 25 V - 4.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI075N15N3G

IPI075N15N3G

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,332 -

RFQ

IPI075N15N3G

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFS3004-7TRL

AUIRFS3004-7TRL

MOSFET N-CH 40V 240A D2PAK

International Rectifier
2,168 -

RFQ

AUIRFS3004-7TRL

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.25mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9130 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC8296

FDMC8296

MOSFET N-CH 30V 12A/18A 8MLP

Fairchild Semiconductor
3,845 -

RFQ

FDMC8296

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 18A (Tc) 4.5V, 10V 8mOhm @ 12A, 10V 3V @ 250µA 23 nC @ 10 V ±20V 1385 pF @ 15 V - 2.3W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD20N06TM

FQD20N06TM

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,722 -

RFQ

FQD20N06TM

Scheda tecnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 16.8A (Tc) 10V 63mOhm @ 8.4A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 2.5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP62N15P

IXTP62N15P

MOSFET N-CH 150V 62A TO220AB

IXYS
3,440 -

RFQ

IXTP62N15P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 62A (Tc) 10V 40mOhm @ 31A, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK16J60W5,S1VQ

TK16J60W5,S1VQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,758 -

RFQ

TK16J60W5,S1VQ

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C Through Hole
FCP13N60N

FCP13N60N

MOSFET N-CH 600V 13A TO220-3

onsemi
3,828 -

RFQ

FCP13N60N

Scheda tecnica

Tube SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 258mOhm @ 6.5A, 10V 4V @ 250µA 39.5 nC @ 10 V ±30V 1765 pF @ 100 V - 116W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK20J60W,S1VE

TK20J60W,S1VE

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,289 -

RFQ

TK20J60W,S1VE

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C Through Hole
FQAF11N90C

FQAF11N90C

MOSFET N-CH 900V 7A TO3PF

onsemi
2,533 -

RFQ

FQAF11N90C

Scheda tecnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 900 V 7A (Tc) 10V 1.1Ohm @ 3.5A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 3290 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT30F50B

APT30F50B

MOSFET N-CH 500V 30A TO247

Microchip Technology
2,177 -

RFQ

APT30F50B

Scheda tecnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 190mOhm @ 14A, 10V 5V @ 1mA 115 nC @ 10 V ±30V 4525 pF @ 25 V - 415W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R125CFD7XKSA1

IPA60R125CFD7XKSA1

MOSFET N-CH 600V 11A TO220

Infineon Technologies
2,513 -

RFQ

IPA60R125CFD7XKSA1

Scheda tecnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH10N80P

IXFH10N80P

MOSFET N-CH 800V 10A TO247AD

IXYS
2,104 -

RFQ

IXFH10N80P

Scheda tecnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP40N65M2

STP40N65M2

MOSFET N-CH 650V 32A TO220

STMicroelectronics
2,458 -

RFQ

STP40N65M2

Scheda tecnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 99mOhm @ 16A, 10V 4V @ 250µA 56.5 nC @ 10 V ±25V 2355 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente