Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFPS40N60KPBF

IRFPS40N60KPBF

MOSFET N-CH 600V 40A SUPER247

Vishay Siliconix
3,625 -

RFQ

IRFPS40N60KPBF

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 130mOhm @ 24A, 10V 5V @ 250µA 330 nC @ 10 V ±30V 7970 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP044NPBF

IRFP044NPBF

MOSFET N-CH 55V 53A TO247AC

Infineon Technologies
3,929 -

RFQ

IRFP044NPBF

Scheda tecnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 20mOhm @ 29A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1500 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP044PBF

IRFP044PBF

MOSFET N-CH 60V 57A TO247-3

Vishay Siliconix
2,771 -

RFQ

IRFP044PBF

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 28mOhm @ 34A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2500 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP344PBF

IRFP344PBF

MOSFET N-CH 450V 9.5A TO247-3

Vishay Siliconix
2,067 -

RFQ

IRFP344PBF

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 9.5A (Tc) 10V 630mOhm @ 5.7A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP048NPBF

IRFP048NPBF

MOSFET N-CH 55V 64A TO247AC

Infineon Technologies
2,022 -

RFQ

IRFP048NPBF

Scheda tecnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 16mOhm @ 37A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 1900 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFPS37N50APBF

IRFPS37N50APBF

MOSFET N-CH 500V 36A SUPER247

Vishay Siliconix
3,910 -

RFQ

IRFPS37N50APBF

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 22A, 10V 4V @ 250µA 180 nC @ 10 V ±30V 5579 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS3815PBF

IRFPS3815PBF

MOSFET N-CH 150V 105A SUPER247

Infineon Technologies
3,486 -

RFQ

IRFPS3815PBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 15mOhm @ 63A, 10V 5V @ 250µA 390 nC @ 10 V ±30V 6810 pF @ 25 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFPS40N50LPBF

IRFPS40N50LPBF

MOSFET N-CH 500V 46A SUPER247

Vishay Siliconix
3,697 -

RFQ

IRFPS40N50LPBF

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 250µA 380 nC @ 10 V ±30V 8110 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3714PBF

IRL3714PBF

MOSFET N-CH 20V 36A TO220AB

Infineon Technologies
2,027 -

RFQ

IRL3714PBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3714LPBF

IRL3714LPBF

MOSFET N-CH 20V 36A TO262

Infineon Technologies
3,044 -

RFQ

IRL3714LPBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715PBF

IRL3715PBF

MOSFET N-CH 20V 54A TO220AB

Infineon Technologies
3,141 -

RFQ

IRL3715PBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3714SPBF

IRL3714SPBF

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
2,570 -

RFQ

IRL3714SPBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2703PBF

IRL2703PBF

MOSFET N-CH 30V 24A TO220AB

Infineon Technologies
3,430 -

RFQ

IRL2703PBF

Scheda tecnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 40mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715LPBF

IRL3715LPBF

MOSFET N-CH 20V 54A TO262

Infineon Technologies
3,437 -

RFQ

IRL3715LPBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715SPBF

IRL3715SPBF

MOSFET N-CH 20V 54A D2PAK

Infineon Technologies
2,895 -

RFQ

IRL3715SPBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3714ZPBF

IRL3714ZPBF

MOSFET N-CH 20V 36A TO220AB

Infineon Technologies
2,165 -

RFQ

IRL3714ZPBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V ±20V 550 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ24NLPBF

IRFZ24NLPBF

MOSFET N-CH 55V 17A TO262

Infineon Technologies
2,139 -

RFQ

IRFZ24NLPBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707ZPBF

IRF3707ZPBF

MOSFET N-CH 30V 59A TO220AB

Infineon Technologies
2,201 -

RFQ

IRF3707ZPBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 25µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3711ZPBF

IRF3711ZPBF

MOSFET N-CH 20V 92A TO220AB

Infineon Technologies
2,589 -

RFQ

IRF3711ZPBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF520NSPBF

IRF520NSPBF

MOSFET N-CH 100V 9.7A D2PAK

Infineon Technologies
2,340 -

RFQ

IRF520NSPBF

Scheda tecnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) - Surface Mount
Total 42446 Record«Prev1... 238239240241242243244245...2123Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente