Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXUV170N075

IXUV170N075

MOSFET N-CH 75V 175A PLUS220

IXYS
2,182 -

RFQ

Box - Active N-Channel MOSFET (Metal Oxide) 75 V 175A (Tc) - - - - - - - - - Through Hole
IXUV170N075S

IXUV170N075S

MOSFET N-CH 75V 175A PLUS-220SMD

IXYS
3,082 -

RFQ

IXUV170N075S

Scheda tecnica

Box - Active N-Channel MOSFET (Metal Oxide) 75 V 175A (Tc) - - - - - - - - - Surface Mount
VMO150-01P1

VMO150-01P1

MOSFET N-CH 100V 165A ECO-PAC2

IXYS
2,863 -

RFQ

VMO150-01P1

Scheda tecnica

Box HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 165A (Tc) 10V 8mOhm @ 90A, 10V 4V @ 8mA 400 nC @ 10 V ±20V 9400 pF @ 25 V - 400W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
VMO40-05P1

VMO40-05P1

MOSFET N-CH ECO-PAC2

IXYS
3,070 -

RFQ

Box - Obsolete N-Channel MOSFET (Metal Oxide) - - - - - - - - - - - Chassis Mount
VMO80-05P1

VMO80-05P1

MOSFET N-CH ECO-PAC2

IXYS
2,759 -

RFQ

Box - Obsolete N-Channel MOSFET (Metal Oxide) - - - - - - - - - - - Chassis Mount
IXUN350N10

IXUN350N10

MOSFET N-CH 100V 350A SOT-227B

IXYS
2,011 -

RFQ

IXUN350N10

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 350A (Tc) 10V 2.5mOhm @ 175A, 10V 4V @ 3mA 640 nC @ 10 V ±20V 27000 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTY08N50D2-TRL

IXTY08N50D2-TRL

MOSFET N-CH 500V 800MA TO252AA

IXYS
2,196 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 800mA (Tj) 0V 4.6Ohm @ 400mA, 0V 4.5V @ 25µA 12.7 nC @ 5 V ±20V 312 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH9N80

IXFH9N80

MOSFET N-CH 800V 9A TO247AD

IXYS
3,776 -

RFQ

IXFH9N80

Scheda tecnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 800 V 9A (Tc) 10V 900mOhm @ 500mA, 10V 4.5V @ 2.5mA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY2N65X2

IXTY2N65X2

MOSFET N-CH 650V 2A TO252

IXYS
2,273 -

RFQ

IXTY2N65X2

Scheda tecnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Tc) 10V 2.3Ohm @ 1A, 10V 5V @ 250µA 4.3 nC @ 10 V ±30V 180 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP100N04T2

IXTP100N04T2

MOSFET N-CH 40V 100A TO220AB

IXYS
2,303 -

RFQ

IXTP100N04T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 250µA 25.5 nC @ 10 V ±20V 2690 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP08N50D2

IXTP08N50D2

MOSFET N-CH 500V 800MA TO220AB

IXYS
3,543 -

RFQ

IXTP08N50D2

Scheda tecnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 800mA (Tc) - 4.6Ohm @ 400mA, 0V - 12.7 nC @ 5 V ±20V 312 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY44N10T

IXTY44N10T

MOSFET N-CH 100V 44A TO252

IXYS
2,068 -

RFQ

IXTY44N10T

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 22A, 10V 4.5V @ 25µA 33 nC @ 10 V ±30V 1262 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP70N075T2

IXTP70N075T2

MOSFET N-CH 75V 70A TO220AB

IXYS
3,930 -

RFQ

IXTP70N075T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 70A (Tc) 10V 12mOhm @ 25A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 2725 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA08N50D2

IXTA08N50D2

MOSFET N-CH 500V 800MA TO263

IXYS
3,371 -

RFQ

IXTA08N50D2

Scheda tecnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 800mA (Tc) - 4.6Ohm @ 400mA, 0V - 12.7 nC @ 5 V ±20V 312 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP60N10T

IXTP60N10T

MOSFET N-CH 100V 60A TO220AB

IXYS
2,337 -

RFQ

IXTP60N10T

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 18mOhm @ 25A, 10V 4.5V @ 50µA 49 nC @ 10 V ±30V 2650 pF @ 25 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA60N10T

IXTA60N10T

MOSFET N-CH 100V 60A TO263

IXYS
2,691 -

RFQ

IXTA60N10T

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 18mOhm @ 25A, 10V 4.5V @ 50µA 49 nC @ 10 V ±30V 2650 pF @ 25 V - 176W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA110N055T2

IXTA110N055T2

MOSFET N-CH 55V 110A TO263

IXYS
2,136 -

RFQ

IXTA110N055T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 6.6mOhm @ 25A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 3060 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP80N10T

IXTP80N10T

MOSFET N-CH 100V 80A TO220AB

IXYS
2,316 -

RFQ

IXTP80N10T

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 14mOhm @ 25A, 10V 5V @ 100µA 60 nC @ 10 V ±20V 3040 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTY08N100P

IXTY08N100P

MOSFET N-CH 1000V 800MA TO252

IXYS
3,658 -

RFQ

IXTY08N100P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tc) 10V 20Ohm @ 500mA, 10V 4V @ 50µA 11.3 nC @ 10 V ±20V 240 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP130N10T

IXTP130N10T

MOSFET N-CH 100V 130A TO220AB

IXYS
2,949 -

RFQ

IXTP130N10T

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 25A, 10V 4.5V @ 250µA 104 nC @ 10 V ±30V 5080 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 2427 Record«Prev1... 3233343536373839...122Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente