Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMC8676

FDMC8676

MOSFET N-CH 30V 16A/18A POWER33

Fairchild Semiconductor
4,037 -

RFQ

FDMC8676

Scheda tecnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 18A (Tc) 4.5V, 10V 5.9mOhm @ 14.7A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 1935 pF @ 15 V - 2.3W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD5N50FTM

FDD5N50FTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,291 -

RFQ

FDD5N50FTM

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 500 V 3.5A (Tc) 10V 1.55Ohm @ 1.75A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UPA2451TL-E1-A

UPA2451TL-E1-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

UPA2451TL-E1-A

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
FDB6690S

FDB6690S

MOSFET N-CH 30V 42A TO263AB

Fairchild Semiconductor
2,824 -

RFQ

FDB6690S

Scheda tecnica

Bulk PowerTrench®, SyncFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 42A (Ta) 4.5V, 10V 15.5mOhm @ 21A, 10V 3V @ 1mA 15 nC @ 5 V ±20V 1238 pF @ 15 V - 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF9N30

FQPF9N30

MOSFET N-CH 300V 6A TO220F

Fairchild Semiconductor
2,338 -

RFQ

FQPF9N30

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 6A (Tc) 10V 450mOhm @ 3A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 740 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI6N60CTU

FQI6N60CTU

MOSFET N-CH 600V 5.5A I2PAK

Fairchild Semiconductor
1,844 -

RFQ

FQI6N60CTU

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 2Ohm @ 2.75A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 810 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP6N50C

FQP6N50C

MOSFET N-CH 500V 5.5A TO220-3

Fairchild Semiconductor
1,661 -

RFQ

FQP6N50C

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.5A (Tc) 10V 1.2Ohm @ 2.8A, 10V 4V @ 250µA 25 nC @ 10 V ±30V 700 pF @ 25 V - 98W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75631S3S

HUF75631S3S

N CHANNEL ULTRAFET 100V, 33A, 4

Fairchild Semiconductor
1,130 -

RFQ

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 40mOhm @ 33A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB5N60TM

FQB5N60TM

MOSFET N-CH 600V 5A D2PAK

Fairchild Semiconductor
910 -

RFQ

FQB5N60TM

Scheda tecnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 2Ohm @ 2.5A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 730 pF @ 25 V - 3.13W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFD16N05LSM_NL

RFD16N05LSM_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
629 -

RFQ

RFD16N05LSM_NL

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 16A 4V, 5V 47mOhm @ 16A, 5V 2V @ 250mA 80 nC @ 10 V ±10V - - 60W -55°C ~ 150°C (TJ) Surface Mount
PSMN8R5-108ES

PSMN8R5-108ES

N-CHANNEL POWER MOSFET

NXP USA Inc.
466 -

RFQ

PSMN8R5-108ES

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
FDD6770A

FDD6770A

24A, 25V, 0.004OHM, N-CHANNEL

Fairchild Semiconductor
4,705 -

RFQ

FDD6770A

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 50A (Tc) 4.5V, 10V 4mOhm @ 24A, 10V 3V @ 250µA 47 nC @ 10 V ±20V 2405 pF @ 13 V - 3.7W (Ta), 65W (Tc) -55°C ~ 175°C (TJ)
MTP9N25E

MTP9N25E

N-CHANNEL POWER MOSFET

onsemi
4,398 -

RFQ

MTP9N25E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IRF6892STRPBF

IRF6892STRPBF

25V 999A DIRECTFET-LV

International Rectifier
3,790 -

RFQ

IRF6892STRPBF

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta), 125A (Tc) 4.5V, 10V 1.7mOhm @ 28A, 10V 2.1V @ 50µA 25 nC @ 4.5 V ±16V 2510 pF @ 13 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFR5410-IR

AUIRFR5410-IR

AUTOMOTIVE HEXFET P CHANNEL

International Rectifier
2,887 -

RFQ

AUIRFR5410-IR

Scheda tecnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPB80N06SL2-7

SPB80N06SL2-7

N-CHANNEL AUTOMOTIVE MOSFET

Infineon Technologies
600 -

RFQ

SPB80N06SL2-7

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
FDU6680A

FDU6680A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,666 -

RFQ

FDU6680A

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 56A (Tc) 4.5V, 10V 9.5mOhm @ 14A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1425 pF @ 15 V - 1.3W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SJ583LS

2SJ583LS

P-CHANNEL POWER MOSFET

onsemi
5,595 -

RFQ

2SJ583LS

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
HUF75823D3S

HUF75823D3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,600 -

RFQ

HUF75823D3S

Scheda tecnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 150 V 14A (Tc) 10V 150mOhm @ 14A, 10V 4V @ 250µA 54 nC @ 20 V ±20V 800 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF643

IRF643

N-CHANNEL POWER MOSFET

Harris Corporation
3,050 -

RFQ

IRF643

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 16A (Tc) 10V 220mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 42446 Record«Prev1... 3233343536373839...2123Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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