Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK3984-ZK-E1-AY

2SK3984-ZK-E1-AY

MOSFET N-CH 100V 18A TO252

Renesas Electronics America Inc
2,500 -

RFQ

2SK3984-ZK-E1-AY

Scheda tecnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) - 85mOhm @ 9A, 10V - 13 nC @ 10 V - 750 pF @ 10 V - 1W (Ta), 20W (Tc) 150°C (TJ) Surface Mount
UPA1724G-E1-A

UPA1724G-E1-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDU3580

FDU3580

MOSFET N-CH 80V 7.7A IPAK

Fairchild Semiconductor
1,825 -

RFQ

FDU3580

Scheda tecnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 7.7A (Ta) 6V, 10V 29mOhm @ 7.7A, 10V 4V @ 250µA 79 nC @ 10 V ±20V 1760 pF @ 40 V - 3.8W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP50R350CP

IPP50R350CP

COOLMOS 10A, 500V N-CHANNEL

Infineon Technologies
1,500 -

RFQ

IPP50R350CP

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
UPA1716G-E1-A

UPA1716G-E1-A

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,300 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDD6670A_NL

FDD6670A_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,112 -

RFQ

FDD6670A_NL

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 66A (Tc) 4.5V, 10V 8mOhm @ 15A, 10V 3V @ 250µA 22 nC @ 5 V ±20V 1755 pF @ 15 V - 1.3W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQI5N80TU

FQI5N80TU

MOSFET N-CH 800V 4.8A I2PAK

Fairchild Semiconductor
993 -

RFQ

FQI5N80TU

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.8A (Tc) 10V 2.6Ohm @ 2.4A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1250 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSS6N70A

SSS6N70A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
950 -

RFQ

SSS6N70A

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 67 nC @ 10 V ±30V 1200 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75343G3

HUF75343G3

MOSFET N-CH 55V 75A TO247-3

Fairchild Semiconductor
546 -

RFQ

HUF75343G3

Scheda tecnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQAF28N15

FQAF28N15

MOSFET N-CH 150V 22A TO3PF

Fairchild Semiconductor
473 -

RFQ

FQAF28N15

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 22A (Tc) 10V 90mOhm @ 11A, 10V 4V @ 250µA 52 nC @ 10 V ±25V 1600 pF @ 25 V - 102W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S42N03L

RF1S42N03L

42A, 30V, 0.025 OHMS, N-CHANNEL

Harris Corporation
400 -

RFQ

RF1S42N03L

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 5V 25mOhm @ 42A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80N03S4L-03ATMA1

IPB80N03S4L-03ATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
10,000 -

RFQ

IPB80N03S4L-03ATMA1

Scheda tecnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.3mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF642

IRF642

N-CHANNEL POWER MOSFET

Harris Corporation
6,533 -

RFQ

IRF642

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 220mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6711STRPBF

IRF6711STRPBF

MOSFET N-CH 25V 19A/84A DIRECTFT

International Rectifier
4,800 -

RFQ

IRF6711STRPBF

Scheda tecnica

Bulk DirectFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 84A (Tc) - 3.8mOhm @ 19A, 10V 2.35V @ 25µA 20 nC @ 4.5 V ±20V 1810 pF @ 13 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FQP9N50

FQP9N50

MOSFET N-CH 500V 9A TO220-3

Fairchild Semiconductor
3,432 -

RFQ

FQP9N50

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 730mOhm @ 4.5A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80N03S4L03

IPB80N03S4L03

N-CHANNEL POWER MOSFET

Infineon Technologies
2,000 -

RFQ

IPB80N03S4L03

Scheda tecnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.7mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RF1S22N10

RF1S22N10

N-CHANNEL POWER MOSFET

Harris Corporation
1,990 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFL1N12

RFL1N12

N-CHANNEL POWER MOSFET

Harris Corporation
845 -

RFQ

RFL1N12

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 1A (Tc) 10V 1.9Ohm @ 1A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFU1010Z

AUIRFU1010Z

MOSFET N-CH 55V 42A TO251-3

International Rectifier
825 -

RFQ

AUIRFU1010Z

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR420

IRFR420

2.5A 500V 3.000 OHM N-CHANNEL

Harris Corporation
779 -

RFQ

IRFR420

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Record«Prev1... 3738394041424344...2123Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente