Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPTG025N10NM5ATMA1

IPTG025N10NM5ATMA1

TRENCH >=100V PG-HSOG-8

Infineon Technologies
2,146 -

RFQ

IPTG025N10NM5ATMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Ta), 206A (Tc) 6V, 10V 2.5mOhm @ 150A 10V 3.8V @ 158µA 120 nC @ 10 V ±20V 8800 pF @ 50 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6619

IRF6619

MOSFET N-CH 20V 30A DIRECTFET

Infineon Technologies
13,869 -

RFQ

IRF6619

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.45V @ 250µA 57 nC @ 4.5 V ±20V 5040 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6619TR1

IRF6619TR1

MOSFET N-CH 20V 30A DIRECTFET

Infineon Technologies
7,164 -

RFQ

IRF6619TR1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.45V @ 250µA 57 nC @ 4.5 V ±20V 5040 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6619TR1PBF

IRF6619TR1PBF

MOSFET N-CH 20V 30A DIRECTFET

Infineon Technologies
2,000 -

RFQ

IRF6619TR1PBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.45V @ 250µA 57 nC @ 4.5 V ±20V 5040 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IWM013N06NM5XUMA1

IWM013N06NM5XUMA1

TRENCH 40<-<100V

Infineon Technologies
2,363 -

RFQ

IWM013N06NM5XUMA1

Scheda tecnica

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IRL60B216

IRL60B216

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies
2,061 -

RFQ

IRL60B216

Scheda tecnica

Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V 2.4V @ 250µA 258 nC @ 4.5 V ±20V 15570 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N04S303AKSA1

IPP100N04S303AKSA1

MOSFET N-CH 40V 100A TO220-3

Infineon Technologies
500 -

RFQ

IPP100N04S303AKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.8mOhm @ 80A, 10V 4V @ 150µA 145 nC @ 10 V ±20V 9600 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R145CFD7XKSA1

IPA60R145CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
428 -

RFQ

IPA60R145CFD7XKSA1

Scheda tecnica

Bulk,Tube - Active - - - 9A (Tc) - - - - - - - - - -
IPF024N10NF2SATMA1

IPF024N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
3,431 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
SPB100N03S203T

SPB100N03S203T

MOSFET N-CH 30V 100A TO263-3

Infineon Technologies
4,457 -

RFQ

SPB100N03S203T

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7020 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9520NPBF

IRF9520NPBF

MOSFET P-CH 100V 6.8A TO220AB

Infineon Technologies
8,628 -

RFQ

IRF9520NPBF

Scheda tecnica

Tube HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) - 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V - 350 pF @ 25 V - - - Through Hole
AUIRFS8407TRL

AUIRFS8407TRL

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
3,221 -

RFQ

AUIRFS8407TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.8mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP80N08S207AKSA1

IPP80N08S207AKSA1

MOSFET N-CH 75V 80A TO220-3

Infineon Technologies
1,000 -

RFQ

IPP80N08S207AKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPL65R165CFDAUMA1

IPL65R165CFDAUMA1

MOSFET N-CH 650V 21.3A 4VSON

Infineon Technologies
2,805 -

RFQ

IPL65R165CFDAUMA1

Scheda tecnica

Tape & Reel (TR),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 21.3A (Tc) 10V 165mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPL65R165CFDAUMA2

IPL65R165CFDAUMA2

MOSFET N-CH 650V 21.3A 4VSON

Infineon Technologies
3,444 -

RFQ

IPL65R165CFDAUMA2

Scheda tecnica

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 21.3A (Tc) 10V 165mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP100N08S207AKSA1

IPP100N08S207AKSA1

MOSFET N-CH 75V 100A TO220-3

Infineon Technologies
22,200 -

RFQ

IPP100N08S207AKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.1mOhm @ 80A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N06S2L05AKSA2

IPP100N06S2L05AKSA2

MOSFET N-CH 55V 100A TO220-3

Infineon Technologies
340 -

RFQ

IPP100N06S2L05AKSA2

Scheda tecnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB0401NM5SATMA1

IPB0401NM5SATMA1

TRENCH >=100V

Infineon Technologies
3,926 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
IPP013N04NF2SAKMA1

IPP013N04NF2SAKMA1

TRENCH PG-TO220-3

Infineon Technologies
3,592 -

RFQ

Tube * Active - - - - - - - - - - - - - -
IPP027N08N5AKSA1

IPP027N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies
8,256 -

RFQ

IPP027N08N5AKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.7mOhm @ 100A, 10V 3.8V @ 154µA 123 nC @ 10 V ±20V 8970 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev1... 359360361362363364365366...420Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente