Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF8113TRPBF-1

IRF8113TRPBF-1

MOSFET N-CH 30V 17.2A 8SO

Infineon Technologies
2,634 -

RFQ

IRF8113TRPBF-1

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V 2.2V @ 250µA 36 nC @ 4.5 V ±20V 2910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7455TRPBF-1

IRF7455TRPBF-1

MOSFET N-CH 30V 15A 8SO

Infineon Technologies
2,138 -

RFQ

IRF7455TRPBF-1

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 2.8V, 10V 7.5mOhm @ 15A, 10V 2V @ 250µA 56 nC @ 5 V ±12V 3480 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFC4127EB

IRFC4127EB

MOSFET N-CH 200V 76A DIE

Infineon Technologies
2,787 -

RFQ

Bulk HEXFET® Obsolete - - 200 V 76A (Ta) - - - - - - - - - Surface Mount
IRLML6402TRPBF-1

IRLML6402TRPBF-1

MOSFET P-CH 20V 3.7A SOT23

Infineon Technologies
3,519 -

RFQ

IRLML6402TRPBF-1

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.7A (Ta) 2.5V, 4.5V 65mOhm @ 3.7A, 4.5V 1.2V @ 250µA 12 nC @ 5 V ±12V 633 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF8707TRPBF-1

IRF8707TRPBF-1

MOSFET N-CH 30V 11A 8SO

Infineon Technologies
3,236 -

RFQ

IRF8707TRPBF-1

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 11.9mOhm @ 11A, 10V 2.35V @ 25µA 9.3 nC @ 4.5 V ±20V 760 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7821TRPBF-1

IRF7821TRPBF-1

MOSFET N-CH 30V 13.6A 8SO

Infineon Technologies
3,625 -

RFQ

IRF7821TRPBF-1

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.6A (Ta) 4.5V, 10V 9.1mOhm @ 13A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1010 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
IRF7809AVTRPBF-1

IRF7809AVTRPBF-1

MOSFET N-CH 30V 13.3A 8SO

Infineon Technologies
2,414 -

RFQ

IRF7809AVTRPBF-1

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.3A (Ta) 4.5V 9mOhm @ 15A, 4.5V 1V @ 250µA 62 nC @ 5 V ±12V 3780 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7805ZTRPBF-1

IRF7805ZTRPBF-1

MOSFET N-CH 30V 16A 8SO

Infineon Technologies
3,195 -

RFQ

IRF7805ZTRPBF-1

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6.8mOhm @ 16A, 10V 2.25V @ 250µA 27 nC @ 4.5 V ±20V 2080 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFC4568EB

IRFC4568EB

MOSFET N-CH 150V 171A DIE

Infineon Technologies
2,735 -

RFQ

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 171A (Ta) - - - - - - - - - Surface Mount
IRFC4229EB

IRFC4229EB

MOSFET N-CH 250V 46A DIE

Infineon Technologies
2,091 -

RFQ

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 46A - - - - - - - - - Surface Mount
IRF8714TRPBF-1

IRF8714TRPBF-1

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
2,247 -

RFQ

IRF8714TRPBF-1

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1020 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFP450PBF

IRFP450PBF

MOSFET N-CH 500V 14A TO247AC

Infineon Technologies
2,238 -

RFQ

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 8.4A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2600 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRLS3034-7TRL

AUIRLS3034-7TRL

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,560 -

RFQ

AUIRLS3034-7TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 4.5V, 10V 1.4mOhm @ 200A, 10V 2.5V @ 250µA 180 nC @ 4.5 V ±20V 10990 pF @ 40 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8409-7TRL

AUIRFS8409-7TRL

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
2,744 -

RFQ

AUIRFS8409-7TRL

Scheda tecnica

Tape & Reel (TR),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 0.75mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1404STRL

AUIRF1404STRL

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies
2,465 -

RFQ

AUIRF1404STRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT65R080CFD7XTMA1

IPT65R080CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies
2,092 -

RFQ

Tape & Reel (TR) - Active - - 650 V - - - - - - - - - - Surface Mount
IAUS300N08S5N011ATMA1

IAUS300N08S5N011ATMA1

MOSFET_(75V 120V( PG-HSOG-8

Infineon Technologies
3,065 -

RFQ

IAUS300N08S5N011ATMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 410A (Tj) 6V, 10V 1.1mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL4010

AUIRFSL4010

MOSFET N CH 100V 180A TO262

Infineon Technologies
3,049 -

RFQ

AUIRFSL4010

Scheda tecnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) - 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V - 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI030N10N3GXKSA1

IPI030N10N3GXKSA1

MOSFET N-CH 100V 100A TO262-3

Infineon Technologies
3,098 -

RFQ

IPI030N10N3GXKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPBE65R115CFD7AATMA1

IPBE65R115CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-7

Infineon Technologies
3,343 -

RFQ

IPBE65R115CFD7AATMA1

Scheda tecnica

Tape & Reel (TR) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 115mOhm @ 9.7A, 10V 4.5V @ 490µA 41 nC @ 10 V ±20V 1950 pF @ 400 V - 114W (Tc) -40°C ~ 150°C (TJ) Surface Mount
Total 8399 Record«Prev1... 367368369370371372373374...420Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente