Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPD18P06PG

SPD18P06PG

SPD18P06 - 20V-250V P-CHANNEL PO

Infineon Technologies
3,142 -

RFQ

SPD18P06PG

Scheda tecnica

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SPW52N50C3XK

SPW52N50C3XK

SPW52N50 - 500V COOLMOS N-CHANNE

Infineon Technologies
2,131 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPP60R190C6

IPP60R190C6

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
3,096 -

RFQ

IPP60R190C6

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
BSC118N10NSG

BSC118N10NSG

BSC118N10 - 12V-300V N-CHANNEL P

Infineon Technologies
3,846 -

RFQ

BSC118N10NSG

Scheda tecnica

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SPU02N60S5

SPU02N60S5

SPU02N60 - 600V COOLMOS N-CHANNE

Infineon Technologies
2,120 -

RFQ

SPU02N60S5

Scheda tecnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 5.5V @ 80µA 9.5 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSZ088N03MSG

BSZ088N03MSG

BSZ088N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,847 -

RFQ

BSZ088N03MSG

Scheda tecnica

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IPB180N03S4L-H0

IPB180N03S4L-H0

IPB180N03 - 20V-40V N-CHANNEL AU

Infineon Technologies
3,497 -

RFQ

IPB180N03S4L-H0

Scheda tecnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 0.95mOhm @ 100A, 10V 2.2V @ 200µA 300 nC @ 10 V ±16V 23000 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD30N06S2L-23

IPD30N06S2L-23

IPD30N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
2,039 -

RFQ

IPD30N06S2L-23

Scheda tecnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 23mOhm @ 22A, 10V 2V @ 50µA 42 nC @ 10 V ±20V 1091 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50N03S2-07

IPD50N03S2-07

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,041 -

RFQ

IPD50N03S2-07

Scheda tecnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 10V 7.3mOhm @ 50A, 10V 4V @ 85µA 68 nC @ 10 V ±20V 2000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP062NE7N3G

IPP062NE7N3G

IPP062NE7 - 12V-300V N-CHANNEL P

Infineon Technologies
2,240 -

RFQ

IPP062NE7N3G

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
SPD04P10PG

SPD04P10PG

SPD04P10 - 20V-250V P-CHANNEL PO

Infineon Technologies
3,646 -

RFQ

SPD04P10PG

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPD040N03LG

IPD040N03LG

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,401 -

RFQ

IPD040N03LG

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPP50R380CE

IPP50R380CE

POWER FIELD-EFFECT TRANSISTOR, 5

Infineon Technologies
3,595 -

RFQ

IPP50R380CE

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPP50R190CE

IPP50R190CE

POWER FIELD-EFFECT TRANSISTOR, 5

Infineon Technologies
3,778 -

RFQ

IPP50R190CE

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPP220N25NFD

IPP220N25NFD

MOSFET N-CH 250V 61A TO220-3

Infineon Technologies
3,331 -

RFQ

IPP220N25NFD

Scheda tecnica

Bulk OptiMOS™FD Active N-Channel MOSFET (Metal Oxide) 250 V 61A (Tc) - 22mOhm @ 61A, 10V 4V @ 270µA 86 nC @ 10 V ±20V 7076 pF @ 125 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R380C6

IPP60R380C6

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies
3,235 -

RFQ

IPP60R380C6

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPP65R380E6

IPP65R380E6

IPP65R380E6 - 650V-700V COOLMOS

Infineon Technologies
3,972 -

RFQ

IPP65R380E6

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPA60R380C6

IPA60R380C6

600V COOLMOS POWER TRANSISTOR

Infineon Technologies
3,298 -

RFQ

IPA60R380C6

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPA80R310CE

IPA80R310CE

IPA80R310 - 800V COOLMOS N-CHANN

Infineon Technologies
3,886 -

RFQ

IPA80R310CE

Scheda tecnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 16.7A (Tc) 10V 310mOhm @ 11A, 10V 3.9V @ 1mA 91 nC @ 10 V ±20V 2320 pF @ 100 V - 35W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPB031NE7N3G

IPB031NE7N3G

IPB031NE7 - 12V-300V N-CHANNEL P

Infineon Technologies
2,346 -

RFQ

IPB031NE7N3G

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
Total 8399 Record«Prev1... 397398399400401402403404...420Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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