Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UPA2718AGR-E1-AT

UPA2718AGR-E1-AT

MOSFET P-CH 30V 13A 8PSOP

Renesas Electronics America Inc
7,500 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) - 9mOhm @ 6.5A, 10V 2.5V @ 1mA 67 nC @ 10 V - 2810 pF @ 10 V - - - Surface Mount
UPA2742GR-E1-AT

UPA2742GR-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
7,500 -

RFQ

UPA2742GR-E1-AT

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
UPA2718AGR-E2-AT

UPA2718AGR-E2-AT

MOSFET P-CH 30V 13A 8PSOP

Renesas Electronics America Inc
5,000 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) - 9mOhm @ 6.5A, 10V 2.5V @ 1mA 67 nC @ 10 V - 2810 pF @ 10 V - - - Surface Mount
UPA2718GR-E1-AT

UPA2718GR-E1-AT

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0204DPA-00#J53

RJK0204DPA-00#J53

MOSFET N-CH 25V 50A 8WPAK

Renesas Electronics America Inc
3,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Ta) - 2.7mOhm @ 25A, 10V 2.5V @ 1mA 22 nC @ 4.5 V - 4240 pF @ 10 V - - 150°C (TJ) Surface Mount
UPA2719GR(1)-E1-AT

UPA2719GR(1)-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0204DPA-WS#J53

RJK0204DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,950 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDS6689S

FDS6689S

MOSFET N-CH 30V 16A 8SOIC

Fairchild Semiconductor
1,941 -

RFQ

FDS6689S

Scheda tecnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 5.4mOhm @ 16A, 10V 3V @ 1mA 78 nC @ 10 V ±20V 3290 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUFA75344S3S

HUFA75344S3S

MOSFET N-CH 55V 75A D2PAK

Fairchild Semiconductor
1,880 -

RFQ

HUFA75344S3S

Scheda tecnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS8848NZ

FDMS8848NZ

MOSFET N-CH 40V 22.8A/49A 8PQFN

Fairchild Semiconductor
993 -

RFQ

FDMS8848NZ

Scheda tecnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 22.8A (Ta), 49A (Tc) 4.5V, 10V 3.1mOhm @ 22.8A, 10V 3V @ 250µA 152 nC @ 10 V ±20V 8075 pF @ 20 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF6N60

FQPF6N60

MOSFET N-CH 600V 3.6A TO220F

Fairchild Semiconductor
887 -

RFQ

FQPF6N60

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 1.5Ohm @ 1.8A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1000 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF841

IRF841

N-CHANNEL POWER MOSFET

Harris Corporation
800 -

RFQ

IRF841

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 8A (Tc) 10V 850mOhm @ 4.4A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1225 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75344S3

HUF75344S3

75A, 55V, 0.008 OHM, N-CHANNEL U

Harris Corporation
678 -

RFQ

HUF75344S3

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF741

IRF741

N-CHANNEL POWER MOSFET

Harris Corporation
520 -

RFQ

IRF741

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 10A (Tc) 10V 550mOhm @ 5.2A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1250 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ128-AZ

2SJ128-AZ

POWER MOSFET

Renesas Electronics America Inc
448 -

RFQ

2SJ128-AZ

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IRFBE20PBF-BE3

IRFBE20PBF-BE3

MOSFET N-CH 800V 1.8A TO220AB

Vishay Siliconix
985 -

RFQ

IRFBE20PBF-BE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) - 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISL9N322AS3ST

ISL9N322AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,800 -

RFQ

ISL9N322AS3ST

Scheda tecnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 22mOhm @ 35A, 10V 3V @ 250µA 27 nC @ 10 V ±20V 970 pF @ 15 V - 50W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BUK9515-100A127

BUK9515-100A127

N-CHANNEL POWER MOSFET

NXP USA Inc.
8,000 -

RFQ

BUK9515-100A127

Scheda tecnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 4.5V, 10V 14.4mOhm @ 25A, 10V 2V @ 1mA - ±10V 8600 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF6N70

FQPF6N70

MOSFET N-CH 700V 3.5A TO220F

Fairchild Semiconductor
5,064 -

RFQ

FQPF6N70

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 700 V 3.5A (Tc) 10V 1.5Ohm @ 1.75A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1400 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD6682_NL

FDD6682_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,748 -

RFQ

FDD6682_NL

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Ta) 4.5V, 10V 6.2mOhm @ 17A, 10V 3V @ 250µA 31 nC @ 5 V ±20V 2400 pF @ 15 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Surface Mount
Total 42446 Record«Prev1... 4546474849505152...2123Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente