Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK56A12N1,S4X

TK56A12N1,S4X

MOSFET N-CH 120V 56A TO220SIS

Toshiba Semiconductor and Storage
2,258 -

RFQ

TK56A12N1,S4X

Scheda tecnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Tc) 10V 7.5mOhm @ 28A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4200 pF @ 60 V - 45W (Tc) 150°C (TJ) Through Hole
TPCC8002-H(TE12L,Q

TPCC8002-H(TE12L,Q

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage
2,660 -

RFQ

TPCC8002-H(TE12L,Q

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) U-MOSV-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) 4.5V, 10V 8.3mOhm @ 11A, 10V 2.5V @ 1mA 27 nC @ 10 V ±20V 2500 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
Total 1042 Record«Prev1... 4950515253Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente