Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVD3055L170T4G

NVD3055L170T4G

N-CHANNEL POWER LOGIC LEVEL MOSF

onsemi
2,668 -

RFQ

NVD3055L170T4G

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta) 5V 170mOhm @ 4.5A, 5V 2V @ 250µA 10 nC @ 5 V ±15V 275 pF @ 25 V - 1.5W (Ta), 28.5W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDMS8670S

FDMS8670S

POWER FIELD-EFFECT TRANSISTOR, 2

onsemi
2,004 -

RFQ

FDMS8670S

Scheda tecnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 42A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 3V @ 1mA 73 nC @ 10 V ±20V 4000 pF @ 15 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MMBF4118

MMBF4118

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
2,018 -

RFQ

MMBF4118

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
FDS6375

FDS6375

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,769 -

RFQ

FDS6375

Scheda tecnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta) 2.5V, 4.5V 24mOhm @ 8A, 4.5V 1.5V @ 250µA 36 nC @ 4.5 V ±8V 2694 pF @ 10 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
ECH8690-TL-H

ECH8690-TL-H

COMPLEMENTARY DUAL POWER MOSFET

onsemi
2,760 -

RFQ

ECH8690-TL-H

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
NTD5862NT4G

NTD5862NT4G

POWER FIELD-EFFECT TRANSISTOR, 9

onsemi
3,385 -

RFQ

NTD5862NT4G

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 98A (Tc) 10V 5.7mOhm @ 45A, 10V 4V @ 250µA 82 nC @ 10 V ±20V 6000 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTHL080N120SC1

NTHL080N120SC1

SILICON CARBIDE MOSFET, N-CHANNE

onsemi
2,978 -

RFQ

NTHL080N120SC1

Scheda tecnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 44A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25V, -15V 1670 pF @ 800 V - 348W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS5844NLT3G

NVMFS5844NLT3G

POWER MOSFET, SINGLE N-CHANNEL

onsemi
3,520 -

RFQ

NVMFS5844NLT3G

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 11.2A (Ta) 4.5V, 10V 12mOhm @ 10A, 10V 2.3V @ 250µA 30 nC @ 10 V ±20V 1460 pF @ 25 V - 3.7W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
FCD3400N80Z

FCD3400N80Z

POWER FIELD-EFFECT TRANSISTOR, N

onsemi
2,046 -

RFQ

FCD3400N80Z

Scheda tecnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4.5V @ 200µA 9.6 nC @ 10 V ±20V 400 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF14N30

FDPF14N30

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
3,983 -

RFQ

FDPF14N30

Scheda tecnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 300 V 14A (Tc) 10V 290mOhm @ 7A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1060 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS6H818NT1G

NVMFS6H818NT1G

SINGLE N-CHANNEL POWER MOSFET 80

onsemi
3,377 -

RFQ

NVMFS6H818NT1G

Scheda tecnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 20A (Ta), 123A (Tc) 10V 3.7mOhm @ 20A, 10V 4V @ 190µA 46 nC @ 10 V ±20V 3100 pF @ 40 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB3652-F085

FDB3652-F085

N-CHANNEL POWERTRENCH MOSFET, 10

onsemi
3,524 -

RFQ

FDB3652-F085

Scheda tecnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 61A (Tc) 6V, 10V 16mOhm @ 61A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 2880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCD5N60TM

FCD5N60TM

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
2,860 -

RFQ

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.6A (Tc) 10V 950mOhm @ 2.3A, 10V 5V @ 250µA 16 nC @ 10 V ±30V 600 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS6B05NLT1G

NVMFS6B05NLT1G

SINGLE N-CHANNEL POWER MOSFET 10

onsemi
3,412 -

RFQ

NVMFS6B05NLT1G

Scheda tecnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 114A (Tc) 4.5V, 10V 5.6mOhm @ 20A, 10V 3V @ 250µA 6.8 nC @ 10 V ±16V 3980 pF @ 25 V - 3.8W (Ta), 165W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVLUS4C12NTAG

NVLUS4C12NTAG

NVLUS4C12 - SINGLE N-CHANNEL COO

onsemi
2,355 -

RFQ

NVLUS4C12NTAG

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
FGD3050G2

FGD3050G2

FGD3050G2 - N-CHANNEL IGNITION N

onsemi
3,601 -

RFQ

FGD3050G2

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
FDD8796

FDD8796

POWER FIELD-EFFECT TRANSISTOR, 3

onsemi
2,996 -

RFQ

FDD8796

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 52 nC @ 10 V ±20V 2610 pF @ 13 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTDV20N06LT4G

NTDV20N06LT4G

SINGLE N-CHANNEL LOGIC LEVEL POW

onsemi
2,175 -

RFQ

NTDV20N06LT4G

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 5V 48mOhm @ 10A, 5V 2V @ 250µA 32 nC @ 5 V ±15V 990 pF @ 25 V - 1.36W (Ta), 60W (Tj) -55°C ~ 175°C (TJ) Surface Mount
NVTFS5824NLTWG

NVTFS5824NLTWG

NVTFS5824 - POWER MOSFET 60V, 20

onsemi
2,905 -

RFQ

NVTFS5824NLTWG

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 37A (Tc) 4.5V, 10V 20.5mOhm @ 10A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 850 pF @ 25 V - 3.2W (Ta), 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MCH6601-TL-E

MCH6601-TL-E

MCH6601 - P-CHANNEL POWER MOSFET

onsemi
2,869 -

RFQ

MCH6601-TL-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
Total 7100 Record«Prev1... 346347348349350351352353...355Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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