Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTE2931

NTE2931

MOSFET N-CH 200V 12.8A TO3PML

NTE Electronics, Inc
212 -

RFQ

NTE2931

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 12.8A (Tc) 10V 180mOhm @ 6.4A, 40V 4V @ 250µA 58 nC @ 10 V ±30V 1500 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2932

NTE2932

MOSFET N-CH 200V 21.3A TO3PML

NTE Electronics, Inc
488 -

RFQ

NTE2932

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 21.3A (Tc) 10V 85mOhm @ 10.65A, 10V 4V @ 250µA 123 nC @ 10 V ±20V 3000 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2371

NTE2371

MOSFET P-CHANNEL 100V 19A TO220

NTE Electronics, Inc
196 -

RFQ

NTE2371

Scheda tecnica

Bag - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTE2399

NTE2399

MOSFET N-CHANNEL 1KV 3.1A TO220

NTE Electronics, Inc
332 -

RFQ

NTE2399

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2930

NTE2930

MOSFET N-CHANNEL 100V 31A TO3PML

NTE Electronics, Inc
364 -

RFQ

NTE2930

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 40mOhm @ 15.5A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 2270 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTE2383

NTE2383

MOSFET P-CH 100V 10.5A TO220

NTE Electronics, Inc
104 -

RFQ

NTE2383

Scheda tecnica

Bag - Active P-Channel MOSFET (Metal Oxide) 100 V 10.5A (Tc) 10V 300mOhm @ 5.3A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 835 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2375

NTE2375

MOSFET N-CHANNEL 100V 41A TO247

NTE Electronics, Inc
216 -

RFQ

NTE2375

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 41A (Tc) 10V 55mOhm @ 25A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2800 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTE2922

NTE2922

MOSFET N-CHANNEL 400V 16A TO3P

NTE Electronics, Inc
737 -

RFQ

NTE2922

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 16A (Tc) 10V 300mOhm @ 8.9A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2376

NTE2376

MOSFET N-CHANNEL 200V 30A TO247

NTE Electronics, Inc
1,844 -

RFQ

NTE2376

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 85mOhm @ 18A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2800 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2920

NTE2920

MOSFET N-CHANNEL 60V 70A TO3P

NTE Electronics, Inc
363 -

RFQ

NTE2920

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 14mOhm @ 54A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 4500 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTE2393

NTE2393

MOSFET N-CHANNEL 500V 10A TO3P

NTE Electronics, Inc
108 -

RFQ

NTE2393

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 670mOhm @ 5A, 10V 4V @ 1mA - ±20V - - 125W (Tc) 150°C (TJ) Through Hole
NTE2392

NTE2392

MOSFET N-CHANNEL 100V 40A TO3

NTE Electronics, Inc
936 -

RFQ

NTE2392

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 55mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2386

NTE2386

MOSFET N-CHANNEL 600V 6.2A TO3

NTE Electronics, Inc
180 -

RFQ

NTE2386

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.4A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF730

IRF730

MOSFET N-CH 400V 5.5A TO220

NTE Electronics, Inc
806 -

RFQ

IRF730

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2984

NTE2984

MOSFET-PWR N-CHAN 60V 17A TO-220

NTE Electronics, Inc
380 -

RFQ

NTE2984

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 5V 140mOhm @ 8.5A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 60W -55°C ~ 175°C (TJ) Through Hole
NTE2991

NTE2991

MOSFET PWR N-CH 55V 110A TO-220

NTE Electronics, Inc
140 -

RFQ

NTE2991

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8Ohm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTE2973

NTE2973

MOSFET-N-CHAN ENHANCEMENT TO-3P

NTE Electronics, Inc
216 -

RFQ

NTE2973

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 900 V 14A (Tc) 10V 850mOhm @ 7A, 10V 4V @ 1mA - ±30V 2900 pF @ 25 V - 275W (Tc) -55°C ~ 150°C Through Hole
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1500+ Media giornaliera RFQ
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20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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