Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA075N15N3

IPA075N15N3

N-CHANNEL POWER MOSFET

Infineon Technologies
491 -

RFQ

IPA075N15N3

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
RJK6014DPP-00#T2

RJK6014DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
420 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQP18N50V2

FQP18N50V2

MOSFET N-CH 500V 18A TO220-3

Fairchild Semiconductor
590 -

RFQ

FQP18N50V2

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 265mOhm @ 9A, 10V 5V @ 250µA 55 nC @ 10 V ±30V 3290 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ296STL-E

2SJ296STL-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,000 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
BTS132

BTS132

N-CHANNEL POWER MOSFET

Infineon Technologies
232 -

RFQ

BTS132

Scheda tecnica

Bulk * Obsolete - - - - - - - - - - - - - -
IXTA08N120P

IXTA08N120P

MOSFET N-CH 1200V 800MA TO263

IXYS
2,506 -

RFQ

IXTA08N120P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 800mA (Tc) 10V 25Ohm @ 500mA, 10V 4.5V @ 50µA 14 nC @ 10 V ±20V 333 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQA35N40

FQA35N40

MOSFET N-CH 400V 35A TO3P

Fairchild Semiconductor
597 -

RFQ

FQA35N40

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 35A (Tc) 10V 105mOhm @ 17.5A, 10V 5V @ 250µA 140 nC @ 10 V ±30V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2381

NTE2381

MOSFET P-CHANNEL 500V 2.7A TO220

NTE Electronics, Inc
3,975 -

RFQ

NTE2381

Scheda tecnica

Bag - Active P-Channel MOSFET (Metal Oxide) 500 V 2.7A (Tc) 10V 4.9Ohm @ 1.35A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 660 pF @ 25 V - 85W (Tc) -65°C ~ 150°C Through Hole
IRFP362

IRFP362

N-CHANNEL POWER MOSFET

Harris Corporation
173 -

RFQ

IRFP362

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 20A (Tc) 10V 250mOhm @ 13A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 4000 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1567-E

2SK1567-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
228 -

RFQ

2SK1567-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
GP2T080A120H

GP2T080A120H

SIC MOSFET 1200V 80M TO-247-4L

SemiQ
3,717 -

RFQ

GP2T080A120H

Scheda tecnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 61 nC @ 20 V +25V, -10V 1377 pF @ 1000 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH130N15X3

IXFH130N15X3

MOSFET N-CH 150V 130A TO247

IXYS
2,647 -

RFQ

IXFH130N15X3

Scheda tecnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 9mOhm @ 65A, 10V 4.5V @ 1.5mA 80 nC @ 10 V ±20V 5230 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP14N60P

IXTP14N60P

MOSFET N-CH 600V 14A TO220AB

IXYS
3,056 -

RFQ

IXTP14N60P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 250µA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1636STR-E

2SK1636STR-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
940 -

RFQ

2SK1636STR-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
2SJ555-90-E

2SJ555-90-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
347 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFG50N05

RFG50N05

N-CHANNEL POWER MOSFET

Harris Corporation
145 -

RFQ

RFG50N05

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250nA 160 nC @ 20 V ±20V - - 132W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6055VNZ4C13

R6055VNZ4C13

600V 55A TO-247, PRESTOMOS WITH

Rohm Semiconductor
2,179 -

RFQ

R6055VNZ4C13

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 55A (Tc) 10V, 15V 71mOhm @ 16A, 15V 6.5V @ 1.5mA 80 nC @ 10 V ±30V 3700 pF @ 100 V - 543W (Tc) 150°C (TJ) Through Hole
IXFT340N075T2

IXFT340N075T2

MOSFET N-CH 75V 340A TO268

IXYS
2,146 -

RFQ

IXFT340N075T2

Scheda tecnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 340A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 3mA 300 nC @ 10 V - 19000 pF @ 25 V - 935W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3415STRR

IRF3415STRR

MOSFET N-CH 150V 43A D2PAK

Infineon Technologies
2,014 -

RFQ

IRF3415STRR

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3515STRL

IRF3515STRL

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies
3,846 -

RFQ

IRF3515STRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 4.5V @ 250µA 107 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 42446 Record«Prev1... 7879808182838485...2123Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente