Transistor - IGBT - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
HGT1S12N60C3R

HGT1S12N60C3R

24A, 600V N-CHANNEL IGBT

Harris Corporation
2,209 -

RFQ

HGT1S12N60C3R

Scheda tecnica

Bulk - Active - 600 V 24 A 48 A 2.2V @ 15V, 12A 104 W 400µJ (on), 340µJ (off) Standard 71 nC 37ns/120ns 480V, 12A, 25Ohm, 15V 37 ns -55°C ~ 150°C (TJ) Through Hole
IRG4BC30S-STRLP

IRG4BC30S-STRLP

IGBT

International Rectifier
3,762 -

RFQ

IRG4BC30S-STRLP

Scheda tecnica

Bulk - Obsolete - 600 V 34 A 68 A 1.6V @ 15V, 18A 100 W 260µJ (on), 3.45mJ (off) Standard 50 nC 22ns/540ns 480V, 18A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
ISL9V3036D3S

ISL9V3036D3S

N-CHANNEL IGBT

Fairchild Semiconductor
2,184 -

RFQ

ISL9V3036D3S

Scheda tecnica

Tube EcoSPARK® Obsolete - 360 V 21 A - 1.6V @ 4V, 6A 150 W - Logic 17 nC -/4.8µs 300V, 1kOhm, 5V - -40°C ~ 175°C (TJ) Surface Mount
HGT1S12N60C3D

HGT1S12N60C3D

24A, 600V, N-CHANNEL IGBT

Harris Corporation
3,633 -

RFQ

HGT1S12N60C3D

Scheda tecnica

Bulk - Active - 600 V 24 A 96 A 2.2V @ 15V, 15A 104 W - Standard 62 nC - - 40 ns -40°C ~ 150°C (TJ) Through Hole
IKW03N120H

IKW03N120H

IGBT WITH ANTI-PARALLEL DIODE

Infineon Technologies
955 -

RFQ

IKW03N120H

Scheda tecnica

Bulk - Active - 1200 V 9.6 A 9.9 A 2.8V @ 15V, 3A 62.5 W 140µJ (on), 150µJ (off) Standard 22 nC 9.2ns/281ns 800V, 3A, 82Ohm, 15V 42 ns -40°C ~ 150°C (TJ) Through Hole
SGP20N60HS

SGP20N60HS

IGBT, 36A, 600V, N-CHANNEL

Infineon Technologies
520 -

RFQ

SGP20N60HS

Scheda tecnica

Bulk - Active NPT 600 V 36 A 80 A 3.15V @ 15V, 20A 178 W 690µJ Standard 100 nC 18ns/207ns 400V, 20A, 16Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
MGW14N60ED

MGW14N60ED

IGBT, 18A, 600V, N-CHANNEL

onsemi
3,613 -

RFQ

MGW14N60ED

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
HGT1S12N60B3

HGT1S12N60B3

27A, 600V, N-CHANNEL IGBT

Harris Corporation
917 -

RFQ

HGT1S12N60B3

Scheda tecnica

Bulk - Active - 600 V 27 A 110 A 2.1V @ 15V, 12A 104 W 304µJ (on), 250µJ (off) Standard 68 nC 26ns/150ns 480V, 12A, 25Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
HGT1S12N60B3D

HGT1S12N60B3D

27A, 600V, N-CHANNEL IGBT

Harris Corporation
400 -

RFQ

HGT1S12N60B3D

Scheda tecnica

Bulk - Active - 600 V 27 A 110 A 2.1V @ 15V, 12A 104 W 304µJ (on), 250µJ (off) Standard 78 nC 26ns/150ns 480V, 12A, 25Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRG4BC30WPBF

IRG4BC30WPBF

600V WARP 60-150 KHZ DISCRETE IG

International Rectifier
3,164 -

RFQ

IRG4BC30WPBF

Scheda tecnica

Bulk - Active - 600 V 23 A 92 A 2.7V @ 15V, 12A 100 W 130µJ (on), 130µJ (off) Standard 51 nC 25ns/99ns 480V, 12A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRG4BC30UPBF

IRG4BC30UPBF

ULTRAFAST SPEED IGBT

International Rectifier
676 -

RFQ

IRG4BC30UPBF

Scheda tecnica

Bulk - Active - 600 V 23 A 92 A 2.1V @ 15V, 12A 100 W 160µJ (on), 200µJ (off) Standard 50 nC 17ns/78ns 480V, 12A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRG4BC30SPBF

IRG4BC30SPBF

IGBT, 34A I(C), 600V V(BR)CES, N

International Rectifier
2,984 -

RFQ

IRG4BC30SPBF

Scheda tecnica

Bulk - Active - 600 V 34 A 68 A 1.6V @ 15V, 18A 100 W 260µJ (on), 3.45mJ (off) Standard 75 nC 22ns/540ns 480V, 18A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRG4BC30SPBF-INF

IRG4BC30SPBF-INF

IGBT, 34A I(C), 600V V(BR)CES, N

Infineon Technologies
3,429 -

RFQ

IRG4BC30SPBF-INF

Scheda tecnica

Bulk - Active - 600 V 34 A - 1.6V @ 15V, 18A 100 W 260µJ (on), 3.45mJ (off) Standard - 22ns/540ns 480V, 18A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
ISL9V3036P3

ISL9V3036P3

N-CHANNEL IGBT

Fairchild Semiconductor
2,190 -

RFQ

ISL9V3036P3

Scheda tecnica

Tube EcoSPARK® Obsolete - 360 V 21 A - 1.6V @ 4V, 6A 150 W - Logic 17 nC -/4.8µs 300V, 1kOhm, 5V - -40°C ~ 175°C (TJ) Through Hole
HGT1S12N60B3S

HGT1S12N60B3S

27A, 600V, UFS N-CHANNEL IGBT

Harris Corporation
2,663 -

RFQ

HGT1S12N60B3S

Scheda tecnica

Bulk - Active - 600 V 27 A 110 A 2.1V @ 15V, 12A 104 W 304µJ (on), 250µJ (off) Standard 68 nC 26ns/150ns 480V, 12A, 25Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
HGT1S12N60B3DS

HGT1S12N60B3DS

27A, 600V, UFS N-CHANNEL IGBT W/

Harris Corporation
2,746 -

RFQ

HGT1S12N60B3DS

Scheda tecnica

Bulk - Active - 600 V 27 A 110 A 2.1V @ 15V, 12A 104 W 304µJ (on), 250µJ (off) Standard 78 nC 26ns/150ns 480V, 12A, 25Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
FGPF50N30TTU

FGPF50N30TTU

IGBT, 300V, N-CHANNEL, TO-220AB

Fairchild Semiconductor
800 -

RFQ

FGPF50N30TTU

Scheda tecnica

Tube - Obsolete Trench 300 V - 120 A 1.5V @ 15V, 15A 46.8 W - Standard 97 nC - - - -55°C ~ 150°C (TJ) Through Hole
RJP30H1DPD-A0#Q2

RJP30H1DPD-A0#Q2

IGBT

Renesas Electronics America Inc
3,739 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJP4002ASA-00#Q0

RJP4002ASA-00#Q0

IGBT

Renesas Electronics America Inc
2,460 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SKB15N60E8151

SKB15N60E8151

IGBT, 31A, 600V, N-CHANNEL

Infineon Technologies
3,081 -

RFQ

SKB15N60E8151

Scheda tecnica

Bulk - Active NPT 600 V 31 A 62 A 2.4V @ 15V, 15A 139 W 570µJ Standard 76 nC 32ns/234ns 400V, 15A, 21Ohm, 15V 279 ns -55°C ~ 150°C (TJ) Surface Mount
Total 4915 Record«Prev1... 151152153154155156157158...246Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente