Transistor - IGBT - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IXGX75N250

IXGX75N250

IGBT 2500V 170A 780W PLUS247

IXYS
3,119 -

RFQ

IXGX75N250

Scheda tecnica

Tube - Active NPT 2500 V 170 A 530 A 3.6V @ 15V, 150A 780 W - Standard 410 nC - - - -55°C ~ 150°C (TJ) Through Hole
IXBL64N250

IXBL64N250

IGBT 2500V 116A 500W ISOPLUSI5

IXYS
2,710 -

RFQ

IXBL64N250

Scheda tecnica

Tube BIMOSFET™ Active - 2500 V 116 A 750 A 3V @ 15V, 64A 500 W - Standard 400 nC - - 160 ns -55°C ~ 150°C (TJ) Through Hole
CSM350KN

CSM350KN

DISC IGBT XPT-GENX3 TO-264(3)

IXYS
2,191 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IXBX64N250

IXBX64N250

IGBT 2500V

IXYS
2,826 -

RFQ

IXBX64N250

Scheda tecnica

Tube BIMOSFET™ Active - 2500 V 156 A 600 A 3V @ 15V, 64A 735 W - Standard 400 nC 49ns/232ns 1250V, 128A, 1Ohm, 15V 160 ns -55°C ~ 150°C (TJ) Through Hole
Total 984 Record«Prev1... 4647484950Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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