Transistor - JFET

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	ProductStatus	FETType	Voltage-Breakdown(V(BR)GSS)	DraintoSourceVoltage(Vdss)	Current-Drain(Idss)@Vds(Vgs=0)	CurrentDrain(Id)-Max	Voltage-Cutoff(VGSoff)@Id	InputCapacitance(Ciss)(Max)@Vds	Resistance-RDS(On)	Power-Max	OperatingTemperature	MountingType
J174,126 JFET P-CH 30V 400MW TO92-3 NXP USA Inc.	2,211	-	RFQ	Scheda tecnica	Tape & Box (TB)	-	Obsolete	P-Channel	30 V	30 V	20 mA @ 15 V	-	5 V @ 10 nA	8pF @ 10V (VGS)	85 Ohms	400 mW	150°C (TJ)	Through Hole
J176,126 JFET P-CH 30V 400MW TO92-3 NXP USA Inc.	3,195	-	RFQ	Scheda tecnica	Tape & Box (TB)	-	Obsolete	P-Channel	30 V	30 V	2 mA @ 15 V	-	1 V @ 10 nA	8pF @ 10V (VGS)	250 Ohms	400 mW	150°C (TJ)	Through Hole
J108,126 JFET N-CH 25V 0.4W SOT54 NXP USA Inc.	3,339	-	RFQ	Scheda tecnica	Tape & Box (TB)	-	Obsolete	N-Channel	25 V	25 V	80 mA @ 5 V	-	10 V @ 1 µA	30pF @ 0V	8 Ohms	400 mW	150°C (TJ)	Through Hole
J110,126 JFET N-CH 25V 0.4W SOT54 NXP USA Inc.	3,113	-	RFQ	Scheda tecnica	Tape & Box (TB)	-	Obsolete	N-Channel	25 V	25 V	10 mA @ 5 V	-	4 V @ 1 µA	30pF @ 0V	18 Ohms	400 mW	150°C (TJ)	Through Hole
IJW120R070T1FKSA1 IJW120R070 - POWER FIELD-EFFECT Infineon Technologies	418	-	RFQ	Scheda tecnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-