onsemi FQE10N20LCTU

Numero parte
FQE10N20LCTU
Produttore
onsemi
Categoria:
Transistoren – FETs, MOSFETs – Einzeltransistoren
Imballaggio
TO-126-3
Scheda tecnica
Fudong Communication (Shenzhen) Group Co., Ltd.FQE10N20LCTU.pdf
Descrizione
MOSFET N-CH 200V 4A TO126-3
Quantità

Prezzo unitario$0

Prezzo totale$0

Pagamento
payment
Spedizione
payment

Product details

1. How to order FQE10N20LCTU on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that FQE10N20LCTU is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the FQE10N20LCTU. All suppliers must pass our qualification reviews before they can publish their products including FQE10N20LCTU on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of FQE10N20LCTU products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the FQE10N20LCTU price and inventory displayed accurate?

The price and inventory of FQE10N20LCTU fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of FQE10N20LCTU?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FQE10N20LCTU we delivered, we will accept the replacement or return of the FQE10N20LCTU only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQE10N20LCTU.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as FQE10N20LCTU pin diagram, FQE10N20LCTU datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Immagine FQI7N80TU FQD4N20TM FQP3N30 FQPF19N10 FQD3P50TM
Numero parte FQI7N80TU FQD4N20TM FQP3N30 FQPF19N10 FQD3P50TM
Produttore onsemi onsemi onsemi onsemi onsemi
Packaging Tube Tube Tube Tube Tube
Series QFET® QFET® QFET® QFET® QFET®
ProductStatus Obsolete Obsolete Obsolete Obsolete Obsolete
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V 200 V 200 V 200 V 200 V
Current-ContinuousDrain(Id)@25°C 4A (Tc) 4A (Tc) 4A (Tc) 4A (Tc) 4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 5V, 10V 5V, 10V 5V, 10V 5V, 10V 5V, 10V
RdsOn(Max)@IdVgs 360mOhm @ 2A, 10V 360mOhm @ 2A, 10V 360mOhm @ 2A, 10V 360mOhm @ 2A, 10V 360mOhm @ 2A, 10V
Vgs(th)(Max)@Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 5 V 19 nC @ 5 V 19 nC @ 5 V 19 nC @ 5 V 19 nC @ 5 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 490 pF @ 25 V 490 pF @ 25 V 490 pF @ 25 V 490 pF @ 25 V 490 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 12.8W (Tc) 12.8W (Tc) 12.8W (Tc) 12.8W (Tc) 12.8W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

FQE10N20LCTU Informazioni rilevanti

I seguenti componenti sono inclusi "FQE10N20LCTU" ISSI, Integrated Silicon Solutions Inc. FQE10N20LCTU.

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