+86 075582561136
Carica BOM
Diodi - Raddrizzatori - Array
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G3S06504BSIC SCHOTTKY DIODE 650V 4A 3-PIN Global Power Technology-GPT |
2,822 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 9A (DC) | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
|
|
G3S06506BSIC SCHOTTKY DIODE 650V 6A 3-PIN Global Power Technology-GPT |
3,072 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
|
|
G3S06508BSIC SCHOTTKY DIODE 650V 8A 3-PIN Global Power Technology-GPT |
3,870 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 14A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
|
|
G3S06512BSIC SCHOTTKY DIODE 650V 12A 3-PI Global Power Technology-GPT |
2,132 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
|
|
G3S12004BSIC SCHOTTKY DIODE 1200V 4A 3-PI Global Power Technology-GPT |
3,052 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 8.5A (DC) | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G3S06510BSIC SCHOTTKY DIODE 650V 10A 3-PI Global Power Technology-GPT |
2,864 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
|
|
G4S06516BTSIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology-GPT |
3,219 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
|
|
G3S12006BSIC SCHOTTKY DIODE 1200V 6A 3-PI Global Power Technology-GPT |
2,610 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G3S06516BSIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology-GPT |
3,394 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.5A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
|
|
G4S06520BTSIC SCHOTTKY DIODE 650V 20A 3-PI Global Power Technology-GPT |
3,140 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 31.2A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
|
|
G5S12016BSIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology-GPT |
2,171 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G5S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology-GPT |
2,302 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.35A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G5S12016BMSIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology-GPT |
2,995 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G3S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology-GPT |
2,069 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.8A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G3S12010BSIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology-GPT |
3,360 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 39A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G4S06530BTSIC SCHOTTKY DIODE 650V 30A 3-PI Global Power Technology-GPT |
2,591 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 39A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
|
|
G5S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT |
2,878 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G3S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT |
2,614 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 37A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G5S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT |
2,438 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G4S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT |
2,347 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33.2A (DC) | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
