Altre categorie di prodotti

Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
GC05MPS12-252 SIC DIODE 1200V 5A TO-252-2 GeneSiC Semiconductor	3,199	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	359pF @ 1V, 1MHz	0 ns	4 µA @ 1200 V	1200 V	27A (DC)	-55°C ~ 175°C	1.8 V @ 5 A
GD30MPS12J 1200V 30A TO-263-7 SIC SCHOTTKY GeneSiC Semiconductor	928	-	RFQ		Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	-	0 ns	-	1200 V	30A (DC)	175°C	-
GD50MPS12H 1200V 50A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor	491	-	RFQ	Scheda tecnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1.835nF @ 1V, 1MHz	0 ns	15 µA @ 1200 V	1200 V	92A (DC)	-55°C ~ 175°C	1.8 V @ 50 A
GD60MPS17H DIODE SCHOTTKY 1700V 60A TO-247- GeneSiC Semiconductor	484	-	RFQ	Scheda tecnica	Tube	SiC Schottky MPS™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Silicon Carbide Schottky	Active	Through Hole	4577pF @ 1V, 1MHz	-	40 µA @ 1700 V	1700 V	122A (DC)	-55°C ~ 175°C	1.8 V @ 60 A
GC02MPS12-220 SIC DIODE 1200V 2A TO-220-2 GeneSiC Semiconductor	137	-	RFQ	Scheda tecnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	127pF @ 1V, 1MHz	0 ns	2 µA @ 1200 V	1200 V	12A (DC)	-55°C ~ 175°C	1.8 V @ 2 A
S85BR DIODE GEN PURP REV 100V 85A DO5 GeneSiC Semiconductor	200	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	100 V	85A	-65°C ~ 180°C	1.1 V @ 85 A
MUR5010R DIODE GEN PURP REV 100V 50A DO5 GeneSiC Semiconductor	195	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	75 ns	10 µA @ 50 V	100 V	50A	-55°C ~ 150°C	1 V @ 50 A
GB50MPS17-247 SIC DIODE 1700V 50A TO-247-2 GeneSiC Semiconductor	555	-	RFQ	Scheda tecnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Not For New Designs	Through Hole	3193pF @ 1V, 1MHz	0 ns	60 µA @ 1700 V	1700 V	216A (DC)	-55°C ~ 175°C	1.8 V @ 50 A
GB01SLT12-214 DIODE SCHOTTKY 1.2KV 2.5A SMB GeneSiC Semiconductor	3,920	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	69pF @ 1V, 1MHz	0 ns	10 µA @ 1200 V	1200 V	2.5A	-55°C ~ 175°C	1.8 V @ 1 A
GC08MPS12-220 SIC DIODE 1200V 8A TO-220-2 GeneSiC Semiconductor	3,155	-	RFQ	Scheda tecnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	545pF @ 1V, 1MHz	0 ns	7 µA @ 1200 V	1200 V	43A (DC)	-55°C ~ 175°C	1.8 V @ 8 A
S6B DIODE GEN PURP 100V 6A DO4 GeneSiC Semiconductor	3,228	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	100 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
S6BR DIODE GEN PURP REV 100V 6A DO4 GeneSiC Semiconductor	2,190	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	100 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
S6D DIODE GEN PURP 200V 6A DO4 GeneSiC Semiconductor	2,238	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	200 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
S6DR DIODE GEN PURP REV 200V 6A DO4 GeneSiC Semiconductor	2,790	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	200 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
S6G DIODE GEN PURP 400V 6A DO4 GeneSiC Semiconductor	3,002	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	400 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
S6GR DIODE GEN PURP REV 400V 6A DO4 GeneSiC Semiconductor	3,761	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	400 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
S6J DIODE GEN PURP 600V 6A DO4 GeneSiC Semiconductor	2,572	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	600 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
S6JR DIODE GEN PURP REV 600V 6A DO4 GeneSiC Semiconductor	2,910	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	600 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
S6K DIODE GEN PURP 800V 6A DO4 GeneSiC Semiconductor	3,038	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	800 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
S6KR DIODE GEN PURP REV 800V 6A DO4 GeneSiC Semiconductor	2,471	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	800 V	6A	-65°C ~ 175°C	1.1 V @ 6 A