Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU8K-E3/51

GBU8K-E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,876 -

RFQ

GBU8K-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-E3/45

GBU8K-E3/45

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,061 -

RFQ

GBU8K-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GSIB1520-E3/45

GSIB1520-E3/45

BRIDGE RECT 1P 200V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,676 -

RFQ

GSIB1520-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 200 V 3.5 A 950 mV @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A80-E3/45

GSIB15A80-E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,197 -

RFQ

GSIB15A80-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 3.5 A 1 V @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2540-E3/45

GSIB2540-E3/45

BRIDGE RECT 1P 400V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
591 -

RFQ

GSIB2540-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 400 V 3.5 A 1 V @ 12.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU2010-E3/51

BU2010-E3/51

BRIDGE RECT 1P 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division
2,957 -

RFQ

BU2010-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2506-M3/45

BU2506-M3/45

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
800 -

RFQ

BU2506-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
KBU4A-E4/51

KBU4A-E4/51

BRIDGE RECT 1PHASE 50V 4A KBU

Vishay General Semiconductor - Diodes Division
383 -

RFQ

KBU4A-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 4 A 1 V @ 4 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU4G-E4/51

KBU4G-E4/51

BRIDGE RECT 1PHASE 400V 4A KBU

Vishay General Semiconductor - Diodes Division
132 -

RFQ

KBU4G-E4/51

Scheda tecnica

Tray - Active Single Phase Standard 400 V 4 A 1 V @ 4 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
PB5008-E3/45

PB5008-E3/45

BRIDGE RECT 1P 800V 45A PB

Vishay General Semiconductor - Diodes Division
3,948 -

RFQ

PB5008-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 45 A 1.1 V @ 22.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, PB
GBUE2560-M3/P

GBUE2560-M3/P

BRIDGE RECT 1PHASE 600V 4.9A GBU

Vishay General Semiconductor - Diodes Division
305 -

RFQ

GBUE2560-M3/P

Scheda tecnica

Tube - Active Single Phase Standard 600 V 4.9 A 920 mV @ 12.5 A 10 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, GBU
GBPC2504W-E4/51

GBPC2504W-E4/51

BRIDGE RECT 1P 400V 25A GBPC-W

Vishay General Semiconductor - Diodes Division
2,255 -

RFQ

GBPC2504W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2502-E4/51

GBPC2502-E4/51

BRIDGE RECT 1PHASE 200V 25A GBPC

Vishay General Semiconductor - Diodes Division
921 -

RFQ

GBPC2502-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 25 A 1.1 V @ 12.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC1508-E4/51

GBPC1508-E4/51

BRIDGE RECT 1PHASE 800V 15A GBPC

Vishay General Semiconductor - Diodes Division
182 -

RFQ

GBPC1508-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 15 A 1.1 V @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC1501-E4/51

GBPC1501-E4/51

BRIDGE RECT 1PHASE 100V 15A GBPC

Vishay General Semiconductor - Diodes Division
200 -

RFQ

GBPC1501-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 15 A 1.1 V @ 7.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC2501-E4/51

GBPC2501-E4/51

BRIDGE RECT 1PHASE 100V 25A GBPC

Vishay General Semiconductor - Diodes Division
161 -

RFQ

GBPC2501-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 25 A 1.1 V @ 12.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC3508W-E4/51

GBPC3508W-E4/51

BRIDGE RECT 1P 800V 35A GBPC-W

Vishay General Semiconductor - Diodes Division
200 -

RFQ

GBPC3508W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-110MT160KPBF

VS-110MT160KPBF

BRIDGE RECT 3P 1.6KV 110A MT-K

Vishay General Semiconductor - Diodes Division
2,290 -

RFQ

VS-110MT160KPBF

Scheda tecnica

Bulk - Active Three Phase Standard 1.6 kV 110 A - - -40°C ~ 150°C (TJ) Chassis Mount MT-K Module
DF01M-E3/45

DF01M-E3/45

BRIDGE RECT 1PHASE 100V 1A DFM

Vishay General Semiconductor - Diodes Division
2,398 -

RFQ

DF01M-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 100 V 1 A 1.1 V @ 1 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
RMB4S-E3/45

RMB4S-E3/45

BRIDGE RECT 3P 400V TO269AA

Vishay General Semiconductor - Diodes Division
3,232 -

RFQ

RMB4S-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 400 V 500 mA 1.25 V @ 400 mA 5 µA @ 400 V -55°C ~ 150°C (TJ) Surface Mount TO-269AA, 4-BESOP
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