Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU4ML-7001M3/51

GBU4ML-7001M3/51

BRIDGE RECT 1PHASE 1KV 3A GBU

Vishay General Semiconductor - Diodes Division
2,980 -

RFQ

GBU4ML-7001M3/51

Scheda tecnica

Tube - Obsolete Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6DL-5300E3/51

GBU6DL-5300E3/51

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,185 -

RFQ

Tube - Obsolete Single Phase Standard 200 V 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6DL-5300M3/51

GBU6DL-5300M3/51

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,986 -

RFQ

Tube - Obsolete Single Phase Standard 200 V 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6DL-5302E3/45

GBU6DL-5302E3/45

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,373 -

RFQ

Tube - Obsolete Single Phase Standard 200 V 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6DL-5302E3/51

GBU6DL-5302E3/51

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,907 -

RFQ

Tube - Obsolete Single Phase Standard 200 V 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6DL-5302M3/45

GBU6DL-5302M3/45

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,418 -

RFQ

Tube - Obsolete Single Phase Standard 200 V 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6DL-5302M3/51

GBU6DL-5302M3/51

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,367 -

RFQ

Tube - Obsolete Single Phase Standard 200 V 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6DL-7005E3/45

GBU6DL-7005E3/45

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,580 -

RFQ

Tube - Obsolete Single Phase Standard 200 V 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6DL-7005M3/45

GBU6DL-7005M3/45

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,800 -

RFQ

Tube - Obsolete Single Phase Standard 200 V 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6GL-6130E3/51

GBU6GL-6130E3/51

BRIDGE RECT 1PHASE 400V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,258 -

RFQ

Tube - Obsolete Single Phase Standard 400 V 3.8 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6GL-6130M3/51

GBU6GL-6130M3/51

BRIDGE RECT 1PHASE 400V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,893 -

RFQ

Tube - Obsolete Single Phase Standard 400 V 3.8 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6J-1E3/51

GBU6J-1E3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,689 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6J-1M3/51

GBU6J-1M3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,767 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6J-5410M3/51

GBU6J-5410M3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,766 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6JL-5000E3/51

GBU6JL-5000E3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,530 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6JL-5000M3/51

GBU6JL-5000M3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,352 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6JL-5301E3/51

GBU6JL-5301E3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,169 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6JL-5301M3/51

GBU6JL-5301M3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,790 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6JL-5303E3/45

GBU6JL-5303E3/45

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,443 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6JL-5303M3/45

GBU6JL-5303M3/45

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,846 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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