Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
DFB2005

DFB2005

BRIDGE RECT 1PHASE 50V 20A TS6P

onsemi
3,881 -

RFQ

DFB2005

Scheda tecnica

Bulk,Tube,Tube - Active Single Phase Standard 50 V 20 A 1.1 V @ 20 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
DFB2020

DFB2020

BRIDGE RECT 1PHASE 200V 20A TS6P

onsemi
2,573 -

RFQ

DFB2020

Scheda tecnica

Bulk,Tube,Tube - Active Single Phase Standard 200 V 20 A 1.1 V @ 20 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
GBU10005

GBU10005

BRIDGE RECT 1PHASE 50V 10A GBU

Diodes Incorporated
3,412 -

RFQ

GBU10005

Scheda tecnica

Tube - Active Single Phase Standard 50 V 10 A 1 V @ 5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU1008

GBU1008

BRIDGE RECT 1PHASE 800V 10A GBU

Diodes Incorporated
3,416 -

RFQ

GBU1008

Scheda tecnica

Tube - Active Single Phase Standard 800 V 10 A 1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
TS35P06G

TS35P06G

BRIDGE RECT 1P 800V 35A TS-6P

Taiwan Semiconductor Corporation
2,847 -

RFQ

TS35P06G

Scheda tecnica

Tube - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P05G

TS40P05G

BRIDGE RECT 1P 600V 40A TS-6P

Taiwan Semiconductor Corporation
3,988 -

RFQ

TS40P05G

Scheda tecnica

Tube - Active Single Phase Standard 600 V 40 A 1.1 V @ 20 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P06G

TS40P06G

BRIDGE RECT 1P 800V 40A TS-6P

Taiwan Semiconductor Corporation
3,396 -

RFQ

TS40P06G

Scheda tecnica

Tube - Active Single Phase Standard 800 V 40 A 1.1 V @ 20 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
BU1506-M3/51

BU1506-M3/51

BRIDGE RECT 1P 600V 15A BU

Vishay General Semiconductor - Diodes Division
3,018 -

RFQ

BU1506-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 15 A 1.05 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1508-M3/51

BU1508-M3/51

BRIDGE RECT 1P 800V 15A BU

Vishay General Semiconductor - Diodes Division
2,900 -

RFQ

BU1508-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 15 A 1.05 V @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1510-M3/51

BU1510-M3/51

BRIDGE RECT 1P 1KV 15A BU

Vishay General Semiconductor - Diodes Division
3,448 -

RFQ

BU1510-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 15 A 1.05 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU801-G

GBU801-G

BRIDGE RECT 1PHASE 100V 8A GBU

Comchip Technology
2,537 -

RFQ

GBU801-G

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 8 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBJ801-F

GBJ801-F

BRIDGE RECT 1PHASE 100V 8A GBJ

Diodes Incorporated
156 -

RFQ

GBJ801-F

Scheda tecnica

Tube,Tube - Active Single Phase Standard 100 V 8 A 1 V @ 4 A 5 µA @ 100 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ8005-F

GBJ8005-F

BRIDGE RECT 1PHASE 50V 8A GBJ

Diodes Incorporated
3,307 -

RFQ

GBJ8005-F

Scheda tecnica

Tube,Tube - Active Single Phase Standard 50 V 8 A 1 V @ 4 A 5 µA @ 50 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU8005

GBU8005

BRIDGE RECT 1PHASE 50V 8A GBU

Diodes Incorporated
2,597 -

RFQ

GBU8005

Scheda tecnica

Tube,Tube - Active Single Phase Standard 50 V 8 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006-M3/45

BU1006-M3/45

BRIDGE RECT 1P 600V 10A BU

Vishay General Semiconductor - Diodes Division
2,343 -

RFQ

BU1006-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008-M3/45

BU1008-M3/45

BRIDGE RECT 1P 800V 10A BU

Vishay General Semiconductor - Diodes Division
2,105 -

RFQ

BU1008-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010-M3/45

BU1010-M3/45

BRIDGE RECT 1P 1KV 10A BU

Vishay General Semiconductor - Diodes Division
3,495 -

RFQ

BU1010-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GSIB620N-M3/45

GSIB620N-M3/45

BRIDGE RECT 1P 200V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,161 -

RFQ

GSIB620N-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 200 V 6 A 950 mV @ 3 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB640N-M3/45

GSIB640N-M3/45

BRIDGE RECT 1P 400V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,318 -

RFQ

GSIB640N-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 400 V 6 A 950 mV @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB660N-M3/45

GSIB660N-M3/45

BRIDGE RECT 1P 600V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,107 -

RFQ

GSIB660N-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 6 A 950 mV @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
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