Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBJ15005-BP

GBJ15005-BP

BRIDGE RECT 1PHASE 50V 15A GBJ

Micro Commercial Co
2,560 -

RFQ

GBJ15005-BP

Scheda tecnica

Tube - Active Single Phase Standard 50 V 15 A 1.05 V @ 7.5 A 10 µA @ 50 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU6J-E3/45

GBU6J-E3/45

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,830 -

RFQ

GBU6J-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-M3/45

GBU8K-M3/45

BRIDGE RECT 1PHASE 800V 8A GBU

Vishay General Semiconductor - Diodes Division
2,471 -

RFQ

GBU8K-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 8 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1510-E3/51

BU1510-E3/51

BRIDGE RECT 1P 1KV 3.4A BU

Vishay General Semiconductor - Diodes Division
3,865 -

RFQ

BU1510-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 3.4 A 1.05 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU10A-BP

GBU10A-BP

BRIDGE RECT 1PHASE 50V 10A GBU

Micro Commercial Co
3,913 -

RFQ

GBU10A-BP

Scheda tecnica

Tube - Active Single Phase Standard 50 V 10 A 1.1 V @ 5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU10K-BP

GBU10K-BP

BRIDGE RECT 1PHASE 800V 10A GBU

Micro Commercial Co
3,968 -

RFQ

GBU10K-BP

Scheda tecnica

Tube - Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU15G-BP

GBU15G-BP

BRIDGE RECT 1PHASE 400V 15A GBU

Micro Commercial Co
2,102 -

RFQ

GBU15G-BP

Scheda tecnica

Tube - Active Single Phase Standard 400 V 15 A 1.1 V @ 7.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1206-M3/51

BU1206-M3/51

BRIDGE RECT 1P 600V 12A BU

Vishay General Semiconductor - Diodes Division
2,606 -

RFQ

BU1206-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 12 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1208-M3/51

BU1208-M3/51

BRIDGE RECT 1P 800V 12A BU

Vishay General Semiconductor - Diodes Division
2,724 -

RFQ

BU1208-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 12 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1210-M3/51

BU1210-M3/51

BRIDGE RECT 1P 1KV 12A BU

Vishay General Semiconductor - Diodes Division
3,801 -

RFQ

BU1210-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 12 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
2KPB005-BP

2KPB005-BP

2A SINGLE PHASE BRIDGE

Micro Commercial Co
2,832 -

RFQ

Bulk - Active - - - - - - - - -
BU1006A-M3/45

BU1006A-M3/45

BRIDGE RECT 1P 600V 10A BU

Vishay General Semiconductor - Diodes Division
2,759 -

RFQ

BU1006A-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010A-M3/45

BU1010A-M3/45

BRIDGE RECT 1P 1KV 10A BU

Vishay General Semiconductor - Diodes Division
3,299 -

RFQ

BU1010A-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU4KL-BP

GBU4KL-BP

BRIDGE RECT 1PHASE 800V 4A GBU

Micro Commercial Co
2,219 -

RFQ

GBU4KL-BP

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 4 A 900 mV @ 4 A 10 µA @ 800 V -55°C ~ 150°C Through Hole 4-SIP, GBU
GSIB15A20-E3/45

GSIB15A20-E3/45

BRIDGE RECT 1P 200V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,196 -

RFQ

GSIB15A20-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 200 V 3.5 A 1 V @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A40-E3/45

GSIB15A40-E3/45

BRIDGE RECT 1P 400V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,322 -

RFQ

GSIB15A40-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 400 V 3.5 A 1 V @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
KBL606G

KBL606G

BRIDGE RECT 1PHASE 800V 6A KBL

Taiwan Semiconductor Corporation
3,022 -

RFQ

KBL606G

Scheda tecnica

Tray - Active Single Phase Standard 800 V 6 A 1.1 V @ 6 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL607G

KBL607G

BRIDGE RECT 1PHASE 1KV 6A KBL

Taiwan Semiconductor Corporation
3,146 -

RFQ

KBL607G

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 6 A 1.1 V @ 6 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
GBJ608-F

GBJ608-F

BRIDGE RECT 1PHASE 800V 6A GBJ

Diodes Incorporated
2,664 -

RFQ

GBJ608-F

Scheda tecnica

Tube - Active Single Phase Standard 800 V 6 A 1 V @ 3 A 5 µA @ 800 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
DFB2010

DFB2010

BRIDGE RECT 1PH 100V 20MA TS6P

onsemi
3,525 -

RFQ

DFB2010

Scheda tecnica

Bulk,Tube,Tube - Active Single Phase Standard 100 V 20 A 1.1 V @ 20 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
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1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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