Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBJ3502

GBJ3502

BRIDGE RECT 1PHASE 200V 35A GBJ

SMC Diode Solutions
2,214 -

RFQ

GBJ3502

Scheda tecnica

Tube - Active Single Phase Standard 200 V 35 A 1.1 V @ 35 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBJ3504

GBJ3504

BRIDGE RECT 1PHASE 400V 35A GBJ

SMC Diode Solutions
3,343 -

RFQ

GBJ3504

Scheda tecnica

Tube - Active Single Phase Standard 400 V 35 A 1.1 V @ 35 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBJ3508

GBJ3508

BRIDGE RECT 1PHASE 800V 35A GBJ

SMC Diode Solutions
2,071 -

RFQ

GBJ3508

Scheda tecnica

Tube - Active Single Phase Standard 800 V 35 A 1.1 V @ 35 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBU6A-M3/51

GBU6A-M3/51

BRIDGE RECT 1PHASE 50V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,327 -

RFQ

GBU6A-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 50 V 3.8 A 1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8A-M3/51

GBU8A-M3/51

BRIDGE RECT 1PHASE 50V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,423 -

RFQ

GBU8A-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 50 V 3.9 A 1 V @ 8 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6B-M3/51

GBU6B-M3/51

BRIDGE RECT 1PHASE 100V 6A GBU

Vishay General Semiconductor - Diodes Division
2,131 -

RFQ

GBU6B-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 100 V 6 A 1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6D-M3/51

GBU6D-M3/51

BRIDGE RECT 1PHASE 200V 6A GBU

Vishay General Semiconductor - Diodes Division
2,388 -

RFQ

GBU6D-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 200 V 6 A 1 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6G-M3/51

GBU6G-M3/51

BRIDGE RECT 1PHASE 400V 6A GBU

Vishay General Semiconductor - Diodes Division
3,547 -

RFQ

GBU6G-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 400 V 6 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6J-M3/51

GBU6J-M3/51

BRIDGE RECT 1PHASE 600V 6A GBU

Vishay General Semiconductor - Diodes Division
2,569 -

RFQ

GBU6J-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 6 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6K-M3/51

GBU6K-M3/51

BRIDGE RECT 1PHASE 800V 6A GBU

Vishay General Semiconductor - Diodes Division
2,205 -

RFQ

GBU6K-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 6 A 1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6M-M3/51

GBU6M-M3/51

BRIDGE RECT 1PHASE 1KV 6A GBU

Vishay General Semiconductor - Diodes Division
3,318 -

RFQ

GBU6M-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 6 A 1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8B-M3/51

GBU8B-M3/51

BRIDGE RECT 1PHASE 100V 8A GBU

Vishay General Semiconductor - Diodes Division
3,974 -

RFQ

GBU8B-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 100 V 8 A 1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8D-M3/51

GBU8D-M3/51

BRIDGE RECT 1PHASE 200V 8A GBU

Vishay General Semiconductor - Diodes Division
3,919 -

RFQ

GBU8D-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 200 V 8 A 1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8G-M3/51

GBU8G-M3/51

BRIDGE RECT 1PHASE 400V 8A GBU

Vishay General Semiconductor - Diodes Division
3,670 -

RFQ

GBU8G-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 400 V 8 A 1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8J-M3/51

GBU8J-M3/51

BRIDGE RECT 1PHASE 600V 8A GBU

Vishay General Semiconductor - Diodes Division
2,593 -

RFQ

GBU8J-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 8 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006-E3/51

BU1006-E3/51

BRIDGE RECT 1P 600V 3.2A BU

Vishay General Semiconductor - Diodes Division
3,957 -

RFQ

BU1006-E3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 3.2 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008-E3/51

BU1008-E3/51

BRIDGE RECT 1P 800V 3.2A BU

Vishay General Semiconductor - Diodes Division
2,005 -

RFQ

BU1008-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 3.2 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1210-E3/51

BU1210-E3/51

BRIDGE RECT 1P 1KV 3.4A BU

Vishay General Semiconductor - Diodes Division
2,152 -

RFQ

BU1210-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 3.4 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU2501-G

GBU2501-G

BRIDGE RECT 1PHASE 100V 4.2A GBU

Comchip Technology
2,747 -

RFQ

GBU2501-G

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 4.2 A 1 V @ 12.5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU2502-G

GBU2502-G

BRIDGE RECT 1PHASE 200V 4.2A GBU

Comchip Technology
3,277 -

RFQ

GBU2502-G

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 4.2 A 1 V @ 12.5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
Total 8096 Record«Prev1... 154155156157158159160161...405Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente