Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU2506-HF

GBU2506-HF

RECTIFIER BRIDGE GPP 600V 25A GB

Comchip Technology
2,088 -

RFQ

GBU2506-HF

Scheda tecnica

Tube - Active Single Phase Standard 600 V 25 A 1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU2501-HF

GBU2501-HF

RECTIFIER BRIDGE GPP 100V 25A GB

Comchip Technology
3,116 -

RFQ

GBU2501-HF

Scheda tecnica

Tube - Active Single Phase Standard 100 V 25 A 1 V @ 12.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU25005-HF

GBU25005-HF

RECTIFIER BRIDGE GPP 50V 25A GBU

Comchip Technology
3,315 -

RFQ

GBU25005-HF

Scheda tecnica

Tube - Active Single Phase Standard 50 V 25 A 1 V @ 12.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU2504-HF

GBU2504-HF

RECTIFIER BRIDGE GPP 400V 25A GB

Comchip Technology
3,226 -

RFQ

GBU2504-HF

Scheda tecnica

Tube - Active Single Phase Standard 400 V 25 A 1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU2510-HF

GBU2510-HF

RECTIFIER BRIDGE GPP 1000V 25A G

Comchip Technology
2,188 -

RFQ

GBU2510-HF

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU2502-HF

GBU2502-HF

RECTIFIER BRIDGE GPP 200V 25A GB

Comchip Technology
3,260 -

RFQ

GBU2502-HF

Scheda tecnica

Tube - Active Single Phase Standard 200 V 25 A 1 V @ 12.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBJ604G

KBJ604G

BRIDGE RECT 1PHASE 400V 6A KBJ

Diodes Incorporated
3,738 -

RFQ

KBJ604G

Scheda tecnica

Tube - Active Single Phase Standard 400 V 6 A 1 V @ 3 A 5 µA @ 400 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
MP10005G-G

MP10005G-G

BRIDGE RECT 1PHASE 50V 10A MP8

Comchip Technology
2,907 -

RFQ

MP10005G-G

Scheda tecnica

Tray - Active Single Phase Standard 50 V 10 A 1.1 V @ 5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, MP-8
MP1001G-G

MP1001G-G

BRIDGE RECT 1PHASE 100V 10A MP8

Comchip Technology
3,322 -

RFQ

MP1001G-G

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 10 A 1.1 V @ 5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Square, MP-8
MP1002G-G

MP1002G-G

BRIDGE RECT 1PHASE 200V 10A MP8

Comchip Technology
3,891 -

RFQ

MP1002G-G

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 10 A 1.1 V @ 5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, MP-8
MP1006G-G

MP1006G-G

BRIDGE RECT 1PHASE 600V 10A MP8

Comchip Technology
3,487 -

RFQ

MP1006G-G

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, MP-8
MP1008G-G

MP1008G-G

BRIDGE RECT 1PHASE 800V 10A MP8

Comchip Technology
3,762 -

RFQ

MP1008G-G

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, MP-8
GBU4A-M3/51

GBU4A-M3/51

BRIDGE RECT 1PHASE 50V 3A GBU

Vishay General Semiconductor - Diodes Division
2,349 -

RFQ

GBU4A-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 50 V 3 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4B-M3/51

GBU4B-M3/51

BRIDGE RECT 1PHASE 100V 4A GBU

Vishay General Semiconductor - Diodes Division
2,461 -

RFQ

GBU4B-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 100 V 4 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4D-M3/51

GBU4D-M3/51

BRIDGE RECT 1PHASE 200V 4A GBU

Vishay General Semiconductor - Diodes Division
3,256 -

RFQ

GBU4D-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 200 V 4 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4G-M3/51

GBU4G-M3/51

BRIDGE RECT 1PHASE 400V 4A GBU

Vishay General Semiconductor - Diodes Division
2,899 -

RFQ

GBU4G-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 400 V 4 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4J-M3/51

GBU4J-M3/51

BRIDGE RECT 1PHASE 600V 4A GBU

Vishay General Semiconductor - Diodes Division
2,725 -

RFQ

GBU4J-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 4 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4K-M3/51

GBU4K-M3/51

BRIDGE RECT 1PHASE 800V 4A GBU

Vishay General Semiconductor - Diodes Division
2,930 -

RFQ

GBU4K-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 4 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4M-M3/51

GBU4M-M3/51

BRIDGE RECT 1PHASE 1KV 4A GBU

Vishay General Semiconductor - Diodes Division
2,475 -

RFQ

GBU4M-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 4 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4A-M3/45

GBU4A-M3/45

BRIDGE RECT 1PHASE 50V 3A GBU

Vishay General Semiconductor - Diodes Division
3,585 -

RFQ

GBU4A-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 50 V 3 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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1500+ Media giornaliera RFQ
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