Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
G5SBA20-M3/51

G5SBA20-M3/51

BRIDGE RECT 1PHASE 200V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,147 -

RFQ

G5SBA20-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 200 V 2.8 A 1.05 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA60-M3/51

G5SBA60-M3/51

BRIDGE RECT 1PHASE 600V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,469 -

RFQ

G5SBA60-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 2.8 A 1.05 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA80-M3/51

G5SBA80-M3/51

BRIDGE RECT 1PHASE 800V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,905 -

RFQ

G5SBA80-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 2.8 A 1.05 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006A-E3/51

BU1006A-E3/51

BRIDGE RECT 1P 600V 3A BU

Vishay General Semiconductor - Diodes Division
3,116 -

RFQ

BU1006A-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008A-E3/51

BU1008A-E3/51

BRIDGE RECT 1P 800V 3A BU

Vishay General Semiconductor - Diodes Division
3,867 -

RFQ

BU1008A-E3/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
KBJ601G

KBJ601G

BRIDGE RECT 1PHASE 100V 6A KBJ

Diodes Incorporated
3,988 -

RFQ

KBJ601G

Scheda tecnica

Tube - Active Single Phase Standard 100 V 6 A 1 V @ 3 A 5 µA @ 100 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBU4B-E3/45

GBU4B-E3/45

BRIDGE RECT 1PHASE 100V 3A GBU

Vishay General Semiconductor - Diodes Division
2,336 -

RFQ

GBU4B-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 100 V 3 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4M-E3/45

GBU4M-E3/45

BRIDGE RECT 1PHASE 1KV 3A GBU

Vishay General Semiconductor - Diodes Division
3,717 -

RFQ

GBU4M-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8005-G

GBU8005-G

BRIDGE RECT 1PHASE 50V 8A GBU

Comchip Technology
3,575 -

RFQ

GBU8005-G

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 8 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU802-G

GBU802-G

BRIDGE RECT 1PHASE 200V 8A GBU

Comchip Technology
2,727 -

RFQ

GBU802-G

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 8 A 1 V @ 4 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU804-G

GBU804-G

BRIDGE RECT 1PHASE 400V 8A GBU

Comchip Technology
2,909 -

RFQ

GBU804-G

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 8 A 1 V @ 4 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU806-G

GBU806-G

BRIDGE RECT 1PHASE 600V 8A GBU

Comchip Technology
2,363 -

RFQ

GBU806-G

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 8 A 1 V @ 4 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU808-G

GBU808-G

BRIDGE RECT 1PHASE 800V 8A GBU

Comchip Technology
3,089 -

RFQ

GBU808-G

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 8 A 1 V @ 4 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU810-G

GBU810-G

BRIDGE RECT 1PHASE 1KV 8A GBU

Comchip Technology
2,357 -

RFQ

GBU810-G

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 8 A 1 V @ 4 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
DF10S

DF10S

BRIDGE RECT 1PHASE 1V 1A DFS

Diodes Incorporated
2,516 -

RFQ

DF10S

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 1 A 1.1 V @ 1 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
KBL404G

KBL404G

BRIDGE RECT 1PHASE 400V 4A KBL

Taiwan Semiconductor Corporation
3,510 -

RFQ

KBL404G

Scheda tecnica

Tray - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
BU1010-E3/51

BU1010-E3/51

BRIDGE RECT 1P 1KV 3.2A BU

Vishay General Semiconductor - Diodes Division
2,001 -

RFQ

BU1010-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
TS8P05G

TS8P05G

BRIDGE RECT 1PHASE 600V 8A TS-6P

Taiwan Semiconductor Corporation
3,475 -

RFQ

TS8P05G

Scheda tecnica

Tube - Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS8P06G

TS8P06G

BRIDGE RECT 1PHASE 800V 8A TS-6P

Taiwan Semiconductor Corporation
3,373 -

RFQ

TS8P06G

Scheda tecnica

Tube - Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
GBU2508-HF

GBU2508-HF

RECTIFIER BRIDGE GPP 800V 25A GB

Comchip Technology
2,442 -

RFQ

GBU2508-HF

Scheda tecnica

Tube - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
Total 8096 Record«Prev1... 151152153154155156157158...405Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente