Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
TBS606

TBS606

6A 600V STANDARD BRIDGE RECTIFIE

Taiwan Semiconductor Corporation
2,412 -

RFQ

TBS606

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 600 V 6 A 1 V @ 6 A 2 µA @ 600 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
TS6P05G

TS6P05G

BRIDGE RECT 1PHASE 600V 6A TS-6P

Taiwan Semiconductor Corporation
2,312 -

RFQ

TS6P05G

Scheda tecnica

Tube - Active Single Phase Standard 600 V 6 A 1.1 V @ 15 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS10P05G

TS10P05G

BRIDGE RECT 1P 600V 10A TS-6P

Taiwan Semiconductor Corporation
3,659 -

RFQ

TS10P05G

Scheda tecnica

Tube - Active Single Phase Standard 600 V 10 A 1.1 V @ 15 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS10K80-A

TS10K80-A

BRIDGE RECT 1PHASE 800V 10A TS4K

Taiwan Semiconductor Corporation
3,660 -

RFQ

TS10K80-A

Scheda tecnica

Tube - Discontinued at Mosen Single Phase Standard 800 V 10 A 1 V @ 5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS4K
TS20P05G C2G

TS20P05G C2G

BRIDGE RECT 1P 600V 20A TS-6P

Taiwan Semiconductor Corporation
3,321 -

RFQ

TS20P05G C2G

Scheda tecnica

Tube - Active Single Phase Standard 600 V 20 A 1.1 V @ 20 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
DBL157G

DBL157G

BRIDGE RECT 1PHASE 1KV 1.5A DBL

Taiwan Semiconductor Corporation
247 -

RFQ

DBL157G

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 1.5 A 1.1 V @ 1.5 A 2 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
GBL205

GBL205

BRIDGE RECT 1PHASE 600V 2A GBL

Taiwan Semiconductor Corporation
101 -

RFQ

GBL205

Scheda tecnica

Tube - Active Single Phase Standard 600 V 2 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
D2SB60

D2SB60

BRIDGE RECT 1PHASE 600V 2A GBL

Taiwan Semiconductor Corporation
239 -

RFQ

D2SB60

Scheda tecnica

Tube - Active Single Phase Standard 600 V 2 A 1.1 V @ 15 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
TS4K80

TS4K80

BRIDGE RECT 1PHASE 800V 4A TS4K

Taiwan Semiconductor Corporation
577 -

RFQ

TS4K80

Scheda tecnica

Tube - Active Single Phase Standard 800 V 4 A 1.1 V @ 4 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBU405

GBU405

BRIDGE RECT 1PHASE 600V 4A GBU

Taiwan Semiconductor Corporation
583 -

RFQ

GBU405

Scheda tecnica

Tube - Active Single Phase Standard 600 V 4 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU406

GBU406

BRIDGE RECT 1PHASE 800V 4A GBU

Taiwan Semiconductor Corporation
369 -

RFQ

GBU406

Scheda tecnica

Tube - Active Single Phase Standard 800 V 4 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBL10

GBL10

BRIDGE RECT 1PHASE 1KV 4A GBL

Taiwan Semiconductor Corporation
115 -

RFQ

GBL10

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
TS6K60

TS6K60

BRIDGE RECT 1PHASE 600V 6A TS4K

Taiwan Semiconductor Corporation
3,818 -

RFQ

TS6K60

Scheda tecnica

Tube - Active Single Phase Standard 600 V 6 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
TS10K60

TS10K60

BRIDGE RECT 1PHASE 600V 10A TS4K

Taiwan Semiconductor Corporation
500 -

RFQ

TS10K60

Scheda tecnica

Tube - Active Single Phase Standard 600 V 10 A 1 V @ 2 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
TS15P07G

TS15P07G

BRIDGE RECT 1PHASE 1KV 15A TS-6P

Taiwan Semiconductor Corporation
321 -

RFQ

TS15P07G

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 15 A 1.1 V @ 15 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
KBL405G

KBL405G

BRIDGE RECT 1PHASE 600V 4A KBL

Taiwan Semiconductor Corporation
923 -

RFQ

KBL405G

Scheda tecnica

Tray - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
GBU1507

GBU1507

15A, 1000V, STANDARD BRIDGE RECT

Taiwan Semiconductor Corporation
656 -

RFQ

GBU1507

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 15 A 1.1 V @ 15 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP, GBU
TS35P05G

TS35P05G

BRIDGE RECT 1P 600V 35A TS-6P

Taiwan Semiconductor Corporation
896 -

RFQ

TS35P05G

Scheda tecnica

Tube - Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P07G

TS40P07G

BRIDGE RECT 1PHASE 1KV 40A TS-6P

Taiwan Semiconductor Corporation
510 -

RFQ

TS40P07G

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 40 A 1.1 V @ 20 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS35P07G

TS35P07G

BRIDGE RECT 1PHASE 1KV 35A TS-6P

Taiwan Semiconductor Corporation
442 -

RFQ

TS35P07G

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
Total 1002 Record«Prev1234567...51Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente