Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
DBL104G

DBL104G

BRIDGE RECT 1PHASE 400V 1A DBL

Taiwan Semiconductor Corporation
3,108 -

RFQ

DBL104G

Scheda tecnica

Tube - Active Single Phase Standard 400 V 1 A 1.1 V @ 1 A 2 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL107G

DBL107G

DIODE BRIDGE 1A 1000V DBL

Taiwan Semiconductor Corporation
3,351 -

RFQ

Tube - Active Single Phase Standard 1 kV 1 A 1.1 V @ 1 A 2 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL104GH

DBL104GH

BRIDGE RECT 1PHASE 400V 1A DBL

Taiwan Semiconductor Corporation
2,698 -

RFQ

DBL104GH

Scheda tecnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 400 V 1 A 1.1 V @ 1 A 2 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL105GH

DBL105GH

BRIDGE RECT 1PHASE 600V 1A DBL

Taiwan Semiconductor Corporation
3,045 -

RFQ

DBL105GH

Scheda tecnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 1 A 1.1 V @ 1 A 2 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL106GH

DBL106GH

BRIDGE RECT 1PHASE 800V 1A DBL

Taiwan Semiconductor Corporation
3,131 -

RFQ

DBL106GH

Scheda tecnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 1 A 1.1 V @ 1 A 2 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL107GH

DBL107GH

BRIDGE RECT 1PHASE 1KV 1A DBL

Taiwan Semiconductor Corporation
2,521 -

RFQ

DBL107GH

Scheda tecnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 1 A 1.1 V @ 1 A 2 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
SBS26

SBS26

BRIDGE RECT 1PHASE 60V 2A ABS

Taiwan Semiconductor Corporation
2,754 -

RFQ

SBS26

Scheda tecnica

Tape & Reel (TR) - Active Single Phase Standard 60 V 2 A 700 mV @ 2 A 50 µA @ 60 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
TS10KL80

TS10KL80

BRIDGE RECT 1PHASE 800V 10A KBJL

Taiwan Semiconductor Corporation
3,014 -

RFQ

TS10KL80

Scheda tecnica

Tube - Active Single Phase Standard 800 V 10 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJL
TS10KL100

TS10KL100

BRIDGE RECT 1PHASE 1KV 10A KBJL

Taiwan Semiconductor Corporation
2,809 -

RFQ

TS10KL100

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 10 A 1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJL
RABS15M REG

RABS15M REG

BRIDGE RECT 1P 1KV 1.5A ABS-L

Taiwan Semiconductor Corporation
3,684 -

RFQ

RABS15M REG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 1 kV 1.5 A 1 V @ 1.5 A 1 µA @ 1000 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
RMB4S

RMB4S

BRIDGE RECT 1P 400V 500MA MBS

Taiwan Semiconductor Corporation
2,161 -

RFQ

RMB4S

Scheda tecnica

Tape & Reel (TR) - Active Single Phase Standard 400 V 500 mA 1 V @ 400 mA 5 µA @ 400 V -55°C ~ 150°C (TJ) Surface Mount 4-BESOP (0.173, 4.40mm Width)
DBLS105G

DBLS105G

BRIDGE RECT 1PHASE 600V 1A DBLS

Taiwan Semiconductor Corporation
3,475 -

RFQ

DBLS105G

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 600 V 1 A 1.1 V @ 1 A 2 µA @ 600 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
DBL154G

DBL154G

BRIDGE RECT 1PHASE 400V 1.5A DBL

Taiwan Semiconductor Corporation
2,980 -

RFQ

DBL154G

Scheda tecnica

Tube - Active Single Phase Standard 400 V 1.5 A 1.1 V @ 1.5 A 2 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL155G

DBL155G

BRIDGE RECT 1PHASE 600V 1.5A DBL

Taiwan Semiconductor Corporation
2,436 -

RFQ

DBL155G

Scheda tecnica

Tube - Active Single Phase Standard 600 V 1.5 A 1.1 V @ 1.5 A 2 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL156G

DBL156G

BRIDGE RECT 1PHASE 800V 1.5A DBL

Taiwan Semiconductor Corporation
3,240 -

RFQ

DBL156G

Scheda tecnica

Tube - Active Single Phase Standard 800 V 1.5 A 1.1 V @ 1.5 A 2 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL158G

DBL158G

BRIDGE RECT 1P 1.2KV 1.5A DBL

Taiwan Semiconductor Corporation
2,892 -

RFQ

DBL158G

Scheda tecnica

Tube - Active Single Phase Standard 1.2 kV 1.5 A 1.25 V @ 1.5 A 2 µA @ 1200 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL159G

DBL159G

BRIDGE RECT 1P 1.4KV 1.5A DBL

Taiwan Semiconductor Corporation
2,742 -

RFQ

DBL159G

Scheda tecnica

Tube - Active Single Phase Standard 1.4 kV 1.5 A 1.25 V @ 1.5 A 2 µA @ 1400 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL204G

DBL204G

BRIDGE RECT 1PHASE 400V 2A DBL

Taiwan Semiconductor Corporation
3,032 -

RFQ

DBL204G

Scheda tecnica

Tube - Active Single Phase Standard 400 V 2 A 1.15 V @ 2 A 2 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL205G

DBL205G

BRIDGE RECT 1PHASE 600V 2A DBL

Taiwan Semiconductor Corporation
2,934 -

RFQ

DBL205G

Scheda tecnica

Tube - Active Single Phase Standard 600 V 2 A 1.15 V @ 2 A 2 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
DBL206G

DBL206G

BRIDGE RECT 1PHASE 800V 2A DBL

Taiwan Semiconductor Corporation
3,574 -

RFQ

DBL206G

Scheda tecnica

Tube - Active Single Phase Standard 800 V 2 A 1.15 V @ 2 A 2 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
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