Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
RBU1005M

RBU1005M

BRIDGE RECT GLASS 600V 10A RBU

Rectron USA
750 -

RFQ

RBU1005M

Scheda tecnica

Tube - Active Single Phase Standard 600 V 10 A 1 V @ 5 A 1 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, RBU
KBP201

KBP201

STD 2A, CASE TYPE: KBP

EIC SEMICONDUCTOR INC.
900 -

RFQ

KBP201

Scheda tecnica

Bag - Active Single Phase Standard 100 V 2 A 1 V @ 1 A 10 µA @ 100 V -50°C ~ 125°C (TJ) Through Hole 4-SIP, KBP
GBJ6J

GBJ6J

6A -600V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ6J

Scheda tecnica

Bag - Active Single Phase Standard 600 V 2.8 A 1 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ6G

GBJ6G

6A -400V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ6G

Scheda tecnica

Bag - Active Single Phase Standard 400 V 2.8 A 1 V @ 3 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ6M

GBJ6M

6A -1000V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ6M

Scheda tecnica

Bag - Active Single Phase Standard 1 kV 2.8 A 1 V @ 3 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ15G

GBJ15G

15A -400V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ15G

Scheda tecnica

Bag - Active Single Phase Standard 400 V 3.5 A 1 V @ 7.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ15J

GBJ15J

15A -600V - GBJ - BRIDGE

SURGE
249 -

RFQ

GBJ15J

Scheda tecnica

Bag - Active Single Phase Standard 600 V 3.5 A 1 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ15M

GBJ15M

15A -1000V - GBJ - BRIDGE

SURGE
245 -

RFQ

GBJ15M

Scheda tecnica

Bag - Active Single Phase Standard 1 kV 3.5 A 1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ8M

GBJ8M

8A -1000V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ8M

Scheda tecnica

Bag GBJ8 Active Single Phase Standard 1 kV 8 A 1 V @ 4 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ8G

GBJ8G

8A -400V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ8G

Scheda tecnica

Bag GBJ8 Active Single Phase Standard 100 V 8 A 1 V @ 4 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole -
GBJ8J

GBJ8J

8A -600V - GBJ - BRIDGE

SURGE
248 -

RFQ

GBJ8J

Scheda tecnica

Bag GBJ8 Active Single Phase Standard 600 V 8 A 1 V @ 4 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
B80S2A-SLIM

B80S2A-SLIM

BRIDGE RECTIFIER, SINGLE PHASE

Diotec Semiconductor
2,253 -

RFQ

B80S2A-SLIM

Scheda tecnica

Strip - Active Single Phase Standard 160 V 2.3 A 950 mV @ 2 A 5 µA @ 160 V -50°C ~ 150°C (TJ) Surface Mount
B40S2A-SLIM

B40S2A-SLIM

BRIDGE RECTIFIER, SINGLE PHASE

Diotec Semiconductor
2,374 -

RFQ

B40S2A-SLIM

Scheda tecnica

Strip - Active Single Phase Standard 80 V 2.3 A 950 mV @ 2 A 5 µA @ 80 V -50°C ~ 150°C (TJ) Surface Mount
GBJ10G

GBJ10G

10A -400V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ10G

Scheda tecnica

Bag - Active Single Phase Standard 400 V 10 A 1 V @ 5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ10J

GBJ10J

10A -600V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ10J

Scheda tecnica

Bag - Active Single Phase Standard 600 V 10 A 1 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ10M

GBJ10M

10A -1000V - GBJ - BRIDGE

SURGE
240 -

RFQ

GBJ10M

Scheda tecnica

Bag - Active Single Phase Standard 1 kV 10 A 1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ25J

GBJ25J

25A -600V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ25J

Scheda tecnica

Bag - Active Single Phase Standard 600 V 3.5 A 1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ25G

GBJ25G

25A -400V - GBJ - BRIDGE

SURGE
249 -

RFQ

GBJ25G

Scheda tecnica

Bag - Active Single Phase Standard 400 V 3.5 A 1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ25M

GBJ25M

25A -1000V - GBJ - BRIDGE

SURGE
215 -

RFQ

GBJ25M

Scheda tecnica

Bag - Active Single Phase Standard 1 kV 3.5 A 1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
KBP210

KBP210

STD 2A, CASE TYPE: KBP

EIC SEMICONDUCTOR INC.
200 -

RFQ

KBP210

Scheda tecnica

Bag - Active Single Phase Standard 1 kV 2 A 1 V @ 1 A 10 µA @ 1000 V -50°C ~ 125°C (TJ) Through Hole 4-SIP, KBP
Total 8096 Record«Prev1... 7778798081828384...405Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente