Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU4G

GBU4G

1BRect, 400V, 4A

Diotec Semiconductor
2,506 -

RFQ

GBU4G

Scheda tecnica

Box - Active Single Phase Standard 400 V 2.8 A 1 V @ 4 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4B

GBU4B

1BRect, 100V, 4A

Diotec Semiconductor
2,341 -

RFQ

GBU4B

Scheda tecnica

Box - Active Single Phase Standard 100 V 2.8 A 1 V @ 4 A 5 µA @ 100 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4D

GBU4D

1BRect, 200V, 4A

Diotec Semiconductor
2,187 -

RFQ

GBU4D

Scheda tecnica

Box - Active Single Phase Standard 200 V 2.8 A 1 V @ 4 A 5 µA @ 200 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBJ3510

GBJ3510

RECT BRIDGE 1000V 35A 6KBJ

Yangzhou Yangjie Electronic Technology Co.,Ltd
166 -

RFQ

GBJ3510

Scheda tecnica

Box - Active Single Phase Standard 1 kV 35 A 1.05 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU1006

GBU1006

GLASS PASSIVATED BRIDGE RECTIFIE

HY Electronic (Cayman) Limited
100 -

RFQ

GBU1006

Scheda tecnica

Tube - Active Single Phase Standard 600 V 10 A 1 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6K

GBU6K

1BRect, 800V, 6A

Diotec Semiconductor
3,911 -

RFQ

GBU6K

Scheda tecnica

Box - Active Single Phase Standard 800 V 4.2 A 1 V @ 6 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6M

GBU6M

1BRect, 1000V, 6A

Diotec Semiconductor
2,995 -

RFQ

GBU6M

Scheda tecnica

Box - Active Single Phase Standard 1 kV 4.2 A 1 V @ 6 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
4GBJ406

4GBJ406

GLASS PASSIVATED BRIDGE RECTIFIE

HY Electronic (Cayman) Limited
100 -

RFQ

4GBJ406

Scheda tecnica

Tube - Active Single Phase Standard 600 V 4 A 1.05 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU8G

GBU8G

1BRect, 400V, 8A

Diotec Semiconductor
3,244 -

RFQ

GBU8G

Scheda tecnica

Box - Active Single Phase Standard 400 V 5.6 A 1 V @ 8 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8M-T

GBU8M-T

1BRect, 1000V, 8A

Diotec Semiconductor
3,111 -

RFQ

GBU8M-T

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 5.6 A 1 V @ 8 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
RBV1506D

RBV1506D

BRIGDE RECTIFIER 15A 600V, CASE

EIC SEMICONDUCTOR INC.
3,468 -

RFQ

RBV1506D

Scheda tecnica

Bag - Active Single Phase Standard 600 V 15 A 1.1 V @ 15 A 10 µA @ 600 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
GBU8K-T

GBU8K-T

1BRect, 800V, 8A

Diotec Semiconductor
3,232 -

RFQ

GBU8K-T

Scheda tecnica

Tube - Active Single Phase Standard 800 V 5.6 A 1 V @ 8 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
RBV2502D

RBV2502D

BRIGDE RECTIFIER 25A 200V, CASE

EIC SEMICONDUCTOR INC.
100 -

RFQ

RBV2502D

Scheda tecnica

Bag - Active Single Phase Standard 200 V 25 A 1.1 V @ 25 A 10 µA @ 200 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
GBJ3510

GBJ3510

RECTIFIER BRIDGE 35A 1000V GBJ

MDD
2,431 -

RFQ

GBJ3510

Scheda tecnica

Box GBJ Active Single Phase Standard 1 kV 35 A 1.05 V @ 17.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
RBV2506

RBV2506

BRIGDE RECTIFIER 25A 600V, CASE

EIC SEMICONDUCTOR INC.
100 -

RFQ

RBV2506

Scheda tecnica

Bag - Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 10 µA @ 600 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
GBJ2510

GBJ2510

GLASS PASSIVATED BRIDGE RECTIFIE

HY Electronic (Cayman) Limited
3,668 -

RFQ

GBJ2510

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBPC1504W

GBPC1504W

15A -400V - GBPC-W - BRIDGE

SURGE
2,385 -

RFQ

GBPC1504W

Scheda tecnica

Bag - Active Single Phase Standard 400 V 15 A 1.1 V @ 7.5 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBU8KS

GBU8KS

BRIDGE RECTIFIER DIODE

Fairchild Semiconductor
2,457 -

RFQ

GBU8KS

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 8 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBPC5010

KBPC5010

RECT BRIDGE 1000V 50A GBPC50-G

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,717 -

RFQ

KBPC5010

Scheda tecnica

Box - Active Single Phase Standard 1 kV 50 A 1.1 V @ 25 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, KBPC-W
GBU8D

GBU8D

8 A BRIDGE RECTIFIER

onsemi
2,991 -

RFQ

GBU8D

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 8 A 1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
Total 8096 Record«Prev1... 7980818283848586...405Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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