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Diodi - Raddrizzatori - Array
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRF30H100CTHDIODE SCHOTTKY onsemi |
2,244 | - |
RFQ |
Bulk | SWITCHMODE™ | Obsolete | 1 Pair Common Cathode | Schottky | 100 V | 15A | 800 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5 µA @ 100 V | 175°C (Max) | Through Hole | |
|
|
MBRF30H150CTHDIODE SCHOTTKY onsemi |
2,755 | - |
RFQ |
Bulk | SWITCHMODE™ | Obsolete | 1 Pair Common Cathode | Schottky | 150 V | 15A | 1.11 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 150 V | -20°C ~ 150°C | Through Hole | |
|
MBRF30H60CTHDIODE SCHOTTKY onsemi |
3,044 | - |
RFQ |
Bulk | SWITCHMODE™ | Obsolete | 1 Pair Common Cathode | Schottky | 60 V | 15A | 620 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 60 V | 175°C (Max) | Through Hole | |
|
MUR1620CTHDIODE GEN PURPOSE onsemi |
2,956 | - |
RFQ |
Tray | - | Obsolete | 1 Pair Common Cathode | Standard | 200 V | 8A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | -65°C ~ 175°C | Through Hole | |
|
|
MUR1620CTRHDIODE GEN PURPOSE onsemi |
3,645 | - |
RFQ |
Tray | - | Obsolete | 1 Pair Common Anode | Standard | 200 V | 8A | 1.2 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 5 µA @ 200 V | -65°C ~ 175°C | Through Hole | |
|
|
MUR1640CTHDIODE GEN PURPOSE onsemi |
3,360 | - |
RFQ |
Tray | - | Obsolete | 1 Pair Common Cathode | Standard | 400 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 400 V | -65°C ~ 175°C | Through Hole | |
|
MURD620CTHDIODE GEN PURPOSE onsemi |
3,865 | - |
RFQ |
Tray,Tray | - | Obsolete | 1 Pair Common Cathode | Standard | 200 V | 3A | 1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | -65°C ~ 175°C | Surface Mount | |
|
|
MURH840CTHDIODE GEN PURPOSE onsemi |
3,243 | - |
RFQ |
Tray | - | Obsolete | 1 Pair Common Cathode | Standard | 400 V | 4A | 2.2 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 28 ns | 10 µA @ 400 V | -65°C ~ 175°C | Through Hole | |
|
|
MURH860CTHDIODE GEN PURPOSE onsemi |
2,620 | - |
RFQ |
Tray | - | Obsolete | 1 Pair Common Cathode | Standard | 600 V | 4A | 2.8 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | -65°C ~ 175°C | Through Hole | |
|
|
NTST30100CTHDIODE SCHOTTKY onsemi |
800 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | - | Obsolete | 1 Pair Common Cathode | Schottky | 100 V | 15A | 850 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | -40°C ~ 150°C | Through Hole |
|
|
NTST30U100CTHDIODE SCHOTTKY onsemi |
3,524 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | - | Obsolete | 1 Pair Common Cathode | Schottky | 100 V | 15A | 800 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 675 µA @ 100 V | -40°C ~ 150°C | Through Hole |
|
|
NTSV20100CTHDIODE SCHOTTKY onsemi |
3,371 | - |
RFQ |
Bulk | - | Obsolete | 1 Pair Common Cathode | Schottky | 100 V | 10A | 980 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800 µA @ 100 V | -40°C ~ 150°C | Through Hole | |
|
|
NTSV30100CTHDIODE SCHOTTKY onsemi |
2,994 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | 1 Pair Common Cathode | Schottky | 100 V | 15A | 1.05 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | -40°C ~ 150°C | Through Hole |
|
TRS12N65FB,S1F(SDODE SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage |
2,857 | - |
RFQ |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 6A (DC) | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 175°C (Max) | Through Hole | |
|
|
TRS16N65FB,S1F(SDODE SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage |
3,304 | - |
RFQ |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 8A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 175°C (Max) | Through Hole | |
|
|
TRS20N65FB,S1F(SDODE SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage |
3,948 | - |
RFQ |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 10A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 175°C (Max) | Through Hole | |
|
|
TRS24N65FB,S1F(SDODE SCHOTTKY 650V TO247 Toshiba Semiconductor and Storage |
3,829 | - |
RFQ |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 12A (DC) | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 175°C (Max) | Through Hole | |
|
|
BAS16TW-7-GDIODE GEN PURP 75V SOT363 Diodes Incorporated |
3,300 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | |
|
|
BAW156-7-GDIODE GEN PURPOSE Diodes Incorporated |
3,014 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | |
|
|
BAW156T-7-GDIODE GEN PURPOSE Diodes Incorporated |
3,171 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - |
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