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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
VS-30EPH06-N3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	3,753	-	RFQ	Scheda tecnica	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	31 ns	50 µA @ 600 V	600 V	30A	-65°C ~ 175°C	2.6 V @ 30 A
PX1500K DIODE STD D8X7.5 800V 15A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 800 V	800 V	15A	-50°C ~ 175°C	1 V @ 15 A
VS-60EPS12-M3 DIODE 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division	2,076	-	RFQ	Scheda tecnica	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1200 V	1200 V	60A	-40°C ~ 150°C	1.09 V @ 60 A
P1000S DIODE STD D8X7.5 1200V 10A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1200 V	1200 V	10A	-50°C ~ 175°C	1.05 V @ 10 A
IDH12SG60CXKSA2 DIODE SCHOTTKY 600V 12A TO220-2 Infineon Technologies	3,124	-	RFQ	Scheda tecnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	310pF @ 1V, 1MHz	0 ns	100 µA @ 600 V	600 V	12A (DC)	-55°C ~ 175°C	2.1 V @ 12 A
ISL9R860S3ST_NL RECTIFIER DIODE Rochester Electronics, LLC	583	-	RFQ	Scheda tecnica	Bulk	Stealth™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	30 ns	100 µA @ 600 V	600 V	8A	-55°C ~ 175°C	2.4 V @ 8 A
VS-12FR120 DIODE GEN PURP 1.2KV 12A DO203AA Vishay General Semiconductor - Diodes Division	3,390	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	12 mA @ 1200 V	1200 V	12A	-65°C ~ 175°C	1.26 V @ 38 A
UF5402 R-200V 3A ULTRA FAST NTE Electronics, Inc	194	-	RFQ	Scheda tecnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	45pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	3A	-	1 V @ 3 A
IDW16G65C5XKSA1 DIODE SCHOTTKY 650V 16A TO247-3 Infineon Technologies	3,580	-	RFQ	Scheda tecnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	470pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	16A (DC)	-55°C ~ 175°C	1.7 V @ 16 A
PX1500M DIODE STD D8X7.5 1000V 15A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1000 V	1000 V	15A	-50°C ~ 175°C	1 V @ 15 A
1N5554 DIODE GEN PURP 1KV 3A AXIAL Microchip Technology	3,727	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	1 µA @ 1000 V	1000 V	3A	-65°C ~ 175°C	1.2 V @ 9 A
A114B 1 AMP RECT 200 V DO 204 Solid State Inc.	950	-	RFQ	Scheda tecnica	Box		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	200 ns	-	200 V	1A	-55°C ~ 125°C	1.1 V @ 1 A
DH40-18A DIODE GEN PURP 1.8KV 40A TO247AD IXYS	3,898	-	RFQ	Scheda tecnica	Tube	SONIC-FRD™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	300 ns	100 µA @ 1800 V	1800 V	40A	-40°C ~ 150°C	2.7 V @ 40 A
F1200G DIODE FR D8X7.5 400V 12A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	200 ns	5 µA @ 400 V	400 V	12A	-50°C ~ 150°C	910 mV @ 12 A
IDK20G120C5XTMA1 SIC DISCRETE Infineon Technologies	2,306	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	1050pF @ 1V, 1MHz	-	123 µA @ 1200 V	1200 V	56A (DC)	-55°C ~ 175°C	1.8 V @ 20 A
SBT1840-3G SCHOTTKY TO-220AC 40V 18A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 40 V	40 V	18A	-50°C ~ 150°C	535 mV @ 18 A
STPSC20065DY DIODE SCHTKY 650V 20A TO220AC STMicroelectronics	3,690	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101, ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1250pF @ 0V, 1MHz	0 ns	150 µA @ 600 V	650 V	20A	-40°C ~ 175°C	1.45 V @ 20 A
SBT1845-3G SCHOTTKY TO-220AC 45V 18A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 45 V	45 V	18A	-50°C ~ 150°C	535 mV @ 18 A
JANTXV1N5620 DIODE GEN PURP 800V 1A Microchip Technology	3,637	-	RFQ	Scheda tecnica	Bulk	Military, MIL-PRF-19500/427	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	500 nA @ 800 V	800 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
1N5802US DIODE GEN PURP 50V 1A D5A Microchip Technology	3,837	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	25pF @ 10V, 1MHz	25 ns	1 µA @ 50 V	50 V	1A	-65°C ~ 175°C	875 mV @ 1 A