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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
F12K120 DIODE FR D8X7.5 120V 12A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	300 ns	5 µA @ 120 V	120 V	12A	-50°C ~ 175°C	900 mV @ 12 A
IDWD20G120C5XKSA1 SIC SCHOTTKY 1200V 20A TO247-2 Infineon Technologies	3,719	-	RFQ	Scheda tecnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1368pF @ 1V, 1MHz	0 ns	166 µA @ 1200 V	1200 V	62A (DC)	-55°C ~ 175°C	1.65 V @ 20 A
P2000A DIODE STD D8X7.5 50V 20A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 50 V	50 V	20A	-50°C ~ 150°C	1.1 V @ 20 A
C4D10120E DIODE SCHOTTKY 1.2KV 10A TO252-2 Wolfspeed, Inc.	2,183	-	RFQ	Scheda tecnica	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	754pF @ 0V, 1MHz	0 ns	250 µA @ 1200 V	1200 V	33A (DC)	-55°C ~ 175°C	1.8 V @ 10 A
UFT800G DIODE UFR TO-220AC 400V 8A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	5 µA @ 400 V	400 V	8A	-50°C ~ 150°C	1.25 V @ 8 A
C4D10120H ZRECTM 10A 1200V SIC SCHOTTKY DI Wolfspeed, Inc.	3,759	-	RFQ	Scheda tecnica	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	754pF @ 0V, 1MHz	0 ns	250 µA @ 1200 V	1200 V	31.5A (DC)	-55°C ~ 175°C	1.8 V @ 10 A
UFT800J DIODE UFR TO-220AC 600V 8A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	5 µA @ 600 V	600 V	8A	-50°C ~ 150°C	1.75 V @ 8 A
GC50MPS06-247 SIC DIODE 650V 50A TO-247-2 GeneSiC Semiconductor	2,246	-	RFQ	Scheda tecnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	-	0 ns	-	650 V	50A (DC)	175°C (Max)	-
VS-80PF140 DIODE GEN PURP 1.4KV 80A DO203AB Vishay General Semiconductor - Diodes Division	3,551	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	-	1400 V	80A	-55°C ~ 150°C	1.46 V @ 220 A
RUR1560 RECTIFIER DIODE, 15A, 600V Rochester Electronics, LLC	775	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	60 ns	10 µA @ 600 V	600 V	15A	-55°C ~ 175°C	1.5 V @ 15 A
1N5804/TR RECTIFIER UFR,FRR Microchip Technology	3,611	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 10V, 1MHz	25 ns	1 µA @ 100 V	100 V	1A	-65°C ~ 175°C	875 mV @ 1 A
MSC050SDA120B DIODE SCHOTTKY 1200V TO-247 Microchip Technology	3,955	-	RFQ	Scheda tecnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	246pF @ 400V, 1MHz	0 ns	200 µA @ 1200 V	1200 V	109A (DC)	-55°C ~ 175°C	1.8 V @ 50 A
GB10MPS17-247 SIC DIODE 1700V 10A TO-247-2 GeneSiC Semiconductor	3,402	-	RFQ	Scheda tecnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Not For New Designs	Through Hole	669pF @ 1V, 1MHz	0 ns	12 µA @ 1700 V	1700 V	50A (DC)	-55°C ~ 175°C	1.8 V @ 10 A
VS-15ETL06HN3 DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division	2,178	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	220 ns	10 µA @ 600 V	600 V	15A	-65°C ~ 175°C	1.05 V @ 15 A
RGP30D R-200V 3A FAST SW NTE Electronics, Inc	124	-	RFQ	Scheda tecnica	Bag	RGP30	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	3A	-	1.3 V @ 3 A
BYV98-150-TAP DIODE AVALANCHE 150V 4A SOD64 Vishay General Semiconductor - Diodes Division	2,685	-	RFQ	Scheda tecnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	35 ns	10 µA @ 150 V	150 V	4A	-55°C ~ 175°C	1.1 V @ 5 A
GB25MPS17-247 SIC DIODE 1700V 25A TO-247-2 GeneSiC Semiconductor	3,033	-	RFQ	Scheda tecnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1596pF @ 1V, 1MHz	0 ns	30 µA @ 1700 V	1700 V	110A (DC)	-55°C ~ 175°C	1.8 V @ 25 A
VS-97PFR120 DIODE GEN PURP 1.2KV 95A DO203AB Vishay General Semiconductor - Diodes Division	2,889	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	-	1200 V	95A	-55°C ~ 180°C	1.4 V @ 267 A
P2000B DIODE STD D8X7.5 100V 20A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 100 V	100 V	20A	-50°C ~ 150°C	1.1 V @ 20 A
VS-95PF120 DIODE GEN PURP 1.2KV 95A DO203AB Vishay General Semiconductor - Diodes Division	2,389	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	-	1200 V	95A	-55°C ~ 180°C	1.4 V @ 267 A