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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
BYV98-150-TR DIODE AVALANCHE 150V 4A SOD64 Vishay General Semiconductor - Diodes Division	3,954	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	35 ns	10 µA @ 150 V	150 V	4A	-55°C ~ 175°C	1.1 V @ 5 A
1N3893 DIODE GEN PURP 600V 12A DO4 GeneSiC Semiconductor	2,926	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 50 V	600 V	12A	-65°C ~ 150°C	1.4 V @ 12 A
VS-60APF02-M3 DIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division	2,768	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	180 ns	100 µA @ 200 V	200 V	60A	-40°C ~ 150°C	1.3 V @ 60 A
VS-80PFR120W DIODE GEN PURP 1.2KV 80A DO203AB Vishay General Semiconductor - Diodes Division	3,063	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Stud Mount	-	-	-	1200 V	80A	-55°C ~ 180°C	1.4 V @ 220 A
JANTX1N5554/TR STD RECTIFIER Microchip Technology	3,011	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Military, MIL-PRF-19500/420	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	2 µA @ 1 V	1000 V	5A	-65°C ~ 175°C	1.3 V @ 9 A
SBLF10L25-E3/45 DIODE SCHOTTKY 25V 10A ITO220AC Vishay General Semiconductor - Diodes Division	3,866	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	800 µA @ 25 V	25 V	10A	-65°C ~ 150°C	460 mV @ 10 A
FR12B05 DIODE GEN PURP 100V 12A DO4 GeneSiC Semiconductor	2,295	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	500 ns	25 µA @ 100 V	100 V	12A	-65°C ~ 150°C	800 mV @ 12 A
VS-60APF06-M3 DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	3,878	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	180 ns	100 µA @ 600 V	600 V	60A	-40°C ~ 150°C	1.3 V @ 60 A
1N5622 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology	2,505	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	500 nA @ 1000 V	1000 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
JAN1N5809US DIODE GEN PURP 100V 6A B-MELF Microchip Technology	2,892	-	RFQ	Scheda tecnica	Bulk	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 10V, 1MHz	30 ns	5 µA @ 100 V	100 V	6A	-65°C ~ 175°C	875 mV @ 4 A
FESF8ATHE3_A/P DIODE GEN PURP 50V 8A ITO220AC Vishay General Semiconductor - Diodes Division	2,942	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 50 V	50 V	8A	-55°C ~ 150°C	950 mV @ 8 A
FR12D05 DIODE GEN PURP 200V 12A DO4 GeneSiC Semiconductor	2,038	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	500 ns	25 µA @ 100 V	200 V	12A	-65°C ~ 150°C	800 mV @ 12 A
VS-60APF10-M3 DIODE GEN PURP 1KV 60A TO247AC Vishay General Semiconductor - Diodes Division	3,361	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	480 ns	100 µA @ 1000 V	1000 V	60A	-40°C ~ 150°C	1.4 V @ 60 A
JANTX1N5619/TR RECTIFIER UFR,FRR Microchip Technology	2,690	-	RFQ		Tape & Reel (TR)	Military, MIL-PRF-19500/429	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	250 ns	500 nA @ 600 V	600 V	1A	-65°C ~ 175°C	1.6 V @ 3 A
JAN1N5811US DIODE GEN PURP 150V 6A B-MELF Microchip Technology	3,369	-	RFQ	Scheda tecnica	Bulk	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 10V, 1MHz	30 ns	5 µA @ 150 V	150 V	6A	-65°C ~ 175°C	875 mV @ 4 A
FESF8BTHE3_A/P DIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division	2,776	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 100 V	100 V	8A	-55°C ~ 150°C	950 mV @ 8 A
FX2000F DIODE FR D8X7.5_LOWRTH 300V 20A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	200 ns	5 µA @ 300 V	300 V	20A	-50°C ~ 150°C	940 mV @ 20 A
SB10-05P-TD-E DIODE SCHOTTKY 50V 1A PCP onsemi	2,653	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	52pF @ 10V, 1MHz	10 ns	80 µA @ 25 V	50 V	1A	-55°C ~ 125°C	550 mV @ 1 A
RURP1520 RECTIFIER DIODE Rochester Electronics, LLC	548	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	35 ns	100 µA @ 200 V	200 V	15A	-55°C ~ 175°C	1.05 V @ 15 A
NTE600 VARISTOR-SI NTE Electronics, Inc	3,875	-	RFQ	Scheda tecnica	Bag		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	-	-	10 µA @ 5 V	5 V	50mA	150°C	645 mV @ 3 mA