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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
RFN5BGE3STL SUPER FAST RECOVERY DIODE Rohm Semiconductor	3,686	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	30 ns	10 µA @ 350 V	350 V	5A	150°C (Max)	1.5 V @ 5 A
SR106 A0G DIODE SCHOTTKY 60V 1A DO204AL Taiwan Semiconductor Corporation	243	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	1A	-55°C ~ 150°C	700 mV @ 1 A
AS3PG-M3/86A DIODE AVALANCHE 400V 2.1A TO277A Vishay General Semiconductor - Diodes Division	2,834	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	37pF @ 4V, 1MHz	1.2 µs	10 µA @ 400 V	400 V	2.1A (DC)	-55°C ~ 175°C	920 mV @ 1.5 A
RS3DB-13-F DIODE GEN PURP 200V 3A SMB Diodes Incorporated	241	-	RFQ	Scheda tecnica	Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	50pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
ES3A-E3/57T DIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division	2,829	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	45pF @ 4V, 1MHz	30 ns	10 µA @ 50 V	50 V	3A	-55°C ~ 150°C	900 mV @ 3 A
GI506-E3/54 DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division	167	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	2 µs	5 µA @ 600 V	600 V	3A	-50°C ~ 150°C	1.1 V @ 9.4 A
ES3F-E3/57T DIODE GEN PURP 300V 3A DO214AB Vishay General Semiconductor - Diodes Division	3,111	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	30pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	3A	-55°C ~ 150°C	1.1 V @ 3 A
FR12G05 DIODE GEN PURP 400V 12A DO4 GeneSiC Semiconductor	3,773	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	500 ns	25 µA @ 100 V	400 V	12A	-65°C ~ 150°C	800 mV @ 12 A
VS-60EPF02-M3 DIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division	2,535	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	180 ns	100 µA @ 200 V	200 V	60A	-40°C ~ 150°C	1.3 V @ 60 A
VS-12TQ035STRL-M3 DIODE SCHOTTKY 35V 15A D2PAK Vishay General Semiconductor - Diodes Division	3,357	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	900pF @ 5V, 1MHz	-	1.75 mA @ 35 V	35 V	15A	-55°C ~ 150°C	560 mV @ 15 A
VS-40HFR20 DIODE GEN PURP 200V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,181	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	9 mA @ 200 V	200 V	40A	-65°C ~ 190°C	1.3 V @ 125 A
VS-1N1186A DIODE GEN PURP 200V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,833	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	2.5 mA @ 200 V	200 V	40A	-65°C ~ 200°C	1.3 V @ 126 A
FESF8CTHE3_A/P DIODE GEN PURP 150V 8A ITO220AC Vishay General Semiconductor - Diodes Division	3,622	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 150 V	150 V	8A	-55°C ~ 150°C	950 mV @ 8 A
FR12J05 DIODE GEN PURP 600V 12A DO4 GeneSiC Semiconductor	2,611	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	500 ns	25 µA @ 100 V	600 V	12A	-65°C ~ 150°C	800 mV @ 12 A
VS-60EPF04-M3 DIODE GEN PURP 400V 60A TO247AC Vishay General Semiconductor - Diodes Division	2,189	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	180 ns	100 µA @ 400 V	400 V	60A	-40°C ~ 150°C	1.3 V @ 60 A
VS-12TQ035STRR-M3 DIODE SCHOTTKY 35V 15A D2PAK Vishay General Semiconductor - Diodes Division	3,113	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	900pF @ 5V, 1MHz	-	1.75 mA @ 35 V	35 V	15A	-55°C ~ 155°C	560 mV @ 15 A
VS-16FL40S02 DIODE GEN PURP 400V 16A DO203AA Vishay General Semiconductor - Diodes Division	2,996	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	200 ns	50 µA @ 400 V	400 V	16A	-65°C ~ 150°C	1.4 V @ 16 A
CDLL5819E3 DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology	3,644	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	70pF @ 5V, 1MHz	-	50 µA @ 45 V	45 V	1A	-65°C ~ 125°C	490 mV @ 1 A
FESF8DTHE3_A/P DIODE GEN PURP 200V 8A ITO220AC Vishay General Semiconductor - Diodes Division	3,229	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 200 V	200 V	8A	-55°C ~ 150°C	950 mV @ 8 A
JANTXV1N4249 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology	3,212	-	RFQ	Scheda tecnica	Bulk	Military, MIL-PRF-19500/286	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	5 µs	1 µA @ 1000 V	1000 V	1A	-65°C ~ 175°C	1.3 V @ 3 A