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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-309U160DIODE GP 1.6KV 330A DO205AB Vishay General Semiconductor - Diodes Division |
2,359 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 1600 V | 330A | -40°C ~ 180°C | 1.46 V @ 942 A | ||
|
VS-T70HF60DIODE GEN PURP 600V 70A D-55 Vishay General Semiconductor - Diodes Division |
2,034 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 15 mA @ 600 V | 600 V | 70A | - | - | |
|
BYM11-50HE3/96DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,903 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
BYM11-600HE3/96DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,974 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
RGL41AHE3/96DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,161 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
VS-20TQ040S-M3DIODE SCHOTTKY 40V 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,883 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 40 V | 40 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
|
|
RGL41BHE3/96DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,934 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
RGL41DHE3/96DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,299 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
VB20150S-M3/8WDIODE SCHOTTKY 20A 150V TO-263AB Vishay General Semiconductor - Diodes Division |
3,432 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.43 V @ 20 A | |
|
|
RGL41GHE3/96DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,266 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
VB20150S-M3/4WDIODE SCHOTTKY 20A 150V TO-263AB Vishay General Semiconductor - Diodes Division |
2,032 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.43 V @ 20 A | |
|
|
RGL41JHE3/96DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,363 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
VB30100SG-E3/8WDIODE SCHOTTKY 100V 30A TO263AB Vishay General Semiconductor - Diodes Division |
2,368 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 350 µA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 1 V @ 30 A |
|
|
VB30100SG-E3/4WDIODE SCHOTTKY 100V 30A TO263AB Vishay General Semiconductor - Diodes Division |
3,324 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 350 µA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 1 V @ 30 A |
|
|
VB30100SG-M3/8WDIODE SCHOTTKY 30A 100V TO-263AB Vishay General Semiconductor - Diodes Division |
3,517 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 350 µA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 1 V @ 30 A | |
|
|
VB30100SG-M3/4WDIODE SCHOTTKY 30A 100V TO-263AB Vishay General Semiconductor - Diodes Division |
3,517 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 350 µA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 1 V @ 30 A | |
|
|
FESB8AT-E3/81DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,178 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
FESB8BT-E3/81DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,717 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
FESB8CT-E3/81DIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,027 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
FESB8DT-E3/81DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,052 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
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