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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-VSKE250-16PBFDIODE GP 1.6KV 250A MAGNAPAK Vishay General Semiconductor - Diodes Division |
2,937 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 1600 V | 1600 V | 250A | -40°C ~ 150°C | - | |
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VS-VSKE250-20PBFDIODE GEN PURP 2KV 250A MAGNAPAK Vishay General Semiconductor - Diodes Division |
2,532 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 2000 V | 2000 V | 250A | -40°C ~ 150°C | - | |
|
VS-307U200DIODE GP 2KV 330A DO205AB Vishay General Semiconductor - Diodes Division |
2,730 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 2000 V | 330A | -40°C ~ 180°C | 1.46 V @ 942 A | ||
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ES1PBHM3/84ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,558 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
VS-15ETL06STRL-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,222 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 270 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
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ES1PCHM3/84ADIODE GEN PURP 150V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,436 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
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VS-15ETL06STRR-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,513 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 270 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
SSB43LHM3_A/I4A 30V SM SCHOTTKY RECT SMB Vishay General Semiconductor - Diodes Division |
3,259 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 30 V | 30 V | 4A | -65°C ~ 150°C | 450 mV @ 4 A |
|
SBL10L25-E3/45DIODE SCHOTTKY 25V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,756 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 800 µA @ 25 V | 25 V | 10A | -65°C ~ 150°C | 460 mV @ 10 A | |
|
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SSB43LHM3_A/H4A 30V SM SCHOTTKY RECT SMB Vishay General Semiconductor - Diodes Division |
3,003 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 30 V | 30 V | 4A | -65°C ~ 150°C | 450 mV @ 4 A |
|
ESH1DHE3_A/IDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,715 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
|
VS-20L15TS-M3DIODE SCHOTTKY 15V 20A TO263 Vishay General Semiconductor - Diodes Division |
3,342 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2000pF @ 5V, 1MHz | - | 10 mA @ 15 V | 15 V | 20A | -55°C ~ 125°C | 410 mV @ 19 A | |
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BYG10Y-M3/TR3DIODE AVALANCHE 1.6KV 1.5A Vishay General Semiconductor - Diodes Division |
3,563 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1600 V | 1600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
|
UGB8AT-E3/81DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,938 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1 V @ 8 A | |
|
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UGB8BT-E3/81DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,715 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1 V @ 8 A | |
|
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UGB8CT-E3/81DIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,133 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 1 V @ 8 A | |
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|
VS-STPS20L15G-M3DIODE SCHOTTKY 15V 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,096 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2000pF @ 5V, 1MHz | - | 10 mA @ 15 V | 15 V | 20A | -40°C ~ 150°C | 410 mV @ 19 A | |
|
BYWF29-100HE3_A/PDIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,626 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
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BYWF29-150HE3_A/PDIODE GEN PURP 150V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,028 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
|
ESH1PBHM3/84ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,397 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
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