Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-15EWH06FNTRR-M3

VS-15EWH06FNTRR-M3

DIODE GEN PURP 600V 15A D-PAK

Vishay General Semiconductor - Diodes Division
3,418 -

RFQ

VS-15EWH06FNTRR-M3

Scheda tecnica

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 36 ns 50 µA @ 600 V 600 V 15A -65°C ~ 175°C 2.1 V @ 15 A
VS-15EWL06FNTRL-M3

VS-15EWL06FNTRL-M3

DIODE GEN PURP 600V 15A D-PAK

Vishay General Semiconductor - Diodes Division
2,767 -

RFQ

VS-15EWL06FNTRL-M3

Scheda tecnica

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 220 ns 10 µA @ 600 V 600 V 15A -65°C ~ 175°C 1.05 V @ 15 A
VS-15EWL06FNTRR-M3

VS-15EWL06FNTRR-M3

DIODE GEN PURP 600V 15A D-PAK

Vishay General Semiconductor - Diodes Division
3,801 -

RFQ

VS-15EWL06FNTRR-M3

Scheda tecnica

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 220 ns 10 µA @ 600 V 600 V 15A -65°C ~ 175°C 1.05 V @ 15 A
VS-15EWX06FNTRL-M3

VS-15EWX06FNTRL-M3

DIODE GEN PURP 600V 15A D-PAK

Vishay General Semiconductor - Diodes Division
3,325 -

RFQ

VS-15EWX06FNTRL-M3

Scheda tecnica

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 220 ns 10 µA @ 600 V 600 V 15A -65°C ~ 175°C 1.05 V @ 15 A
VS-15EWX06FNTRR-M3

VS-15EWX06FNTRR-M3

DIODE GEN PURP 600V 15A D-PAK

Vishay General Semiconductor - Diodes Division
2,971 -

RFQ

VS-15EWX06FNTRR-M3

Scheda tecnica

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 22 ns 50 µA @ 600 V 600 V 15A -65°C ~ 175°C 3.2 V @ 15 A
VS-85HFL20S05

VS-85HFL20S05

DIODE GEN PURP 200V 85A DO203AB

Vishay General Semiconductor - Diodes Division
3,488 -

RFQ

VS-85HFL20S05

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 100 µA @ 200 V 200 V 85A -40°C ~ 125°C 1.75 V @ 266.9 A
VFT3080S-E3/4W

VFT3080S-E3/4W

DIODE SCHOTTKY 30A 80V ITO-220AB

Vishay General Semiconductor - Diodes Division
2,528 -

RFQ

VFT3080S-E3/4W

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 80 V 80 V 30A -55°C ~ 150°C 950 mV @ 30 A
BYWF29-100-E3/45

BYWF29-100-E3/45

DIODE GEN PURP 100V 8A ITO220AC

Vishay General Semiconductor - Diodes Division
2,645 -

RFQ

BYWF29-100-E3/45

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 10 µA @ 100 V 100 V 8A -65°C ~ 150°C 1.3 V @ 20 A
BYWF29-150-E3/45

BYWF29-150-E3/45

DIODE GEN PURP 150V 8A ITO220AC

Vishay General Semiconductor - Diodes Division
2,906 -

RFQ

BYWF29-150-E3/45

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 10 µA @ 150 V 150 V 8A -65°C ~ 150°C 1.3 V @ 20 A
VS-85HFL40S05

VS-85HFL40S05

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,427 -

RFQ

VS-85HFL40S05

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 100 µA @ 400 V 400 V 85A -40°C ~ 125°C 1.75 V @ 266.9 A
BYWF29-50-E3/45

BYWF29-50-E3/45

DIODE GEN PURP 50V 8A ITO220AC

Vishay General Semiconductor - Diodes Division
3,415 -

RFQ

BYWF29-50-E3/45

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 10 µA @ 50 V 50 V 8A -65°C ~ 150°C 1.3 V @ 20 A
VS-85HFLR40S05

VS-85HFLR40S05

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division
3,793 -

RFQ

VS-85HFLR40S05

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 100 µA @ 400 V 400 V 85A -40°C ~ 125°C 1.75 V @ 266.9 A
RGP02-18E-E3/73

RGP02-18E-E3/73

DIODE GEN PURP 1.8KV 500MA DO204

Vishay General Semiconductor - Diodes Division
2,722 -

RFQ

RGP02-18E-E3/73

Scheda tecnica

Cut Tape (CT),Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 300 ns 5 µA @ 1800 V 1800 V 500mA -65°C ~ 175°C 1.8 V @ 100 mA
RGP02-20E-E3/73

RGP02-20E-E3/73

DIODE GEN PURP 2KV 500MA DO204

Vishay General Semiconductor - Diodes Division
2,991 -

RFQ

RGP02-20E-E3/73

Scheda tecnica

Cut Tape (CT),Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 300 ns 5 µA @ 2000 V 2000 V 500mA -65°C ~ 175°C 1.8 V @ 100 mA
RGP02-17E-E3/73

RGP02-17E-E3/73

DIODE GEN PURP 1.7KV 500MA DO204

Vishay General Semiconductor - Diodes Division
2,320 -

RFQ

RGP02-17E-E3/73

Scheda tecnica

Cut Tape (CT),Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 300 ns 5 µA @ 1700 V 1700 V 500mA -65°C ~ 175°C 1.8 V @ 100 mA
VS-8ETH03STRL-M3

VS-8ETH03STRL-M3

DIODE GEN PURP 300V 8A TO263AB

Vishay General Semiconductor - Diodes Division
3,167 -

RFQ

VS-8ETH03STRL-M3

Scheda tecnica

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 20 µA @ 300 V 300 V 8A -65°C ~ 175°C 1.25 V @ 8 A
VS-8ETH03STRR-M3

VS-8ETH03STRR-M3

DIODE GEN PURP 300V 8A TO263AB

Vishay General Semiconductor - Diodes Division
3,286 -

RFQ

VS-8ETH03STRR-M3

Scheda tecnica

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 20 µA @ 300 V 300 V 8A -65°C ~ 175°C 1.25 V @ 8 A
UGB8BT-E3/45

UGB8BT-E3/45

DIODE GEN PURP 100V 8A TO263AB

Vishay General Semiconductor - Diodes Division
3,126 -

RFQ

UGB8BT-E3/45

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 10 µA @ 100 V 100 V 8A -55°C ~ 150°C 1 V @ 8 A
VS-60APF04-M3

VS-60APF04-M3

DIODE GEN PURP 400V 60A TO247AC

Vishay General Semiconductor - Diodes Division
2,220 -

RFQ

VS-60APF04-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 100 µA @ 400 V 400 V 60A -40°C ~ 150°C 1.3 V @ 60 A
UGB8CT-E3/45

UGB8CT-E3/45

DIODE GEN PURP 150V 8A TO263AB

Vishay General Semiconductor - Diodes Division
3,876 -

RFQ

UGB8CT-E3/45

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 10 µA @ 150 V 150 V 8A -55°C ~ 150°C 1 V @ 8 A
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