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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-15ETH06S-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,423 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
|
|
VBT1080S-M3/8WDIODE SCHOTTKY 10A 80V TO-263AB Vishay General Semiconductor - Diodes Division |
2,571 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 80 V | 80 V | 10A | -55°C ~ 150°C | 810 mV @ 10 A | |
|
|
VBT1080S-M3/4WDIODE SCHOTTKY 10A 80V TO-263AB Vishay General Semiconductor - Diodes Division |
3,038 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 80 V | 80 V | 10A | -55°C ~ 150°C | 810 mV @ 10 A | |
|
VFT3080S-M3/4WDIODE SCHOTTKY 30A 80V ITO-220AB Vishay General Semiconductor - Diodes Division |
3,942 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 80 V | 80 V | 30A | -55°C ~ 150°C | 950 mV @ 30 A | |
|
|
V20120SG-E3/4WDIODE SCHOTTKY 120V 20A TO220AB Vishay General Semiconductor - Diodes Division |
3,143 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A |
|
VS-85HFLR60S05DIODE GEN PURP 600V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,756 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 600 V | 600 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
|
|
VS-71HF140DIODE GEN PURP 1.4KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,344 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 4.5 mA @ 1400 V | 1400 V | 70A | -65°C ~ 150°C | 1.46 V @ 220 A | |
|
|
VS-71HFR140DIODE GEN PURP 1.4KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,720 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 4.5 mA @ 1400 V | 1400 V | 70A | -65°C ~ 150°C | 1.46 V @ 220 A | |
|
V35PW15-M3/IDIODE SCHOTTKY 150V 35A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,123 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1620pF @ 4V, 1MHz | - | 250 µA @ 150 V | 150 V | 35A | -40°C ~ 150°C | 1.4 V @ 35 A |
|
|
V20150SG-E3/4WDIODE SCHOTTKY 150V 20A TO220AB Vishay General Semiconductor - Diodes Division |
2,639 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A |
|
FESF8AT-E3/45DIODE GEN PURP 50V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,056 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
VS-86HF100DIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,897 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 1000 V | 1000 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
FESF8BT-E3/45DIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,319 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
VS-86HFR100DIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,901 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 1000 V | 1000 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
FESF8CT-E3/45DIODE GEN PURP 150V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,548 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
FESF8DT-E3/45DIODE GEN PURP 200V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,539 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
FESF8GT-E3/45DIODE GEN PURP 400V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,317 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
VF20150S-M3/4WDIODE SCHOTTKY 20A 150V ITO220AB Vishay General Semiconductor - Diodes Division |
2,170 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.43 V @ 20 A | |
|
VS-8ETU12-M3DIODE FRED 1.2KV 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,385 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 144 ns | 55 µA @ 1200 V | 1200 V | 8A | -55°C ~ 175°C | 2.55 V @ 8 A |
|
BYV28-100-TRDIODE AVALANCHE 100V 3.5A SOD64 Vishay General Semiconductor - Diodes Division |
3,776 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 1 µA @ 100 V | 100 V | 3.5A | -55°C ~ 175°C | 1.1 V @ 5 A |
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