Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N4148TR

1N4148TR

DIODE GEN PURP 75V 300MA DO35

Vishay General Semiconductor - Diodes Division
36,730 -

RFQ

1N4148TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 4pF @ 0V, 1MHz 8 ns 25 nA @ 20 V 75 V 300mA (DC) -65°C ~ 150°C 1 V @ 10 mA
VS-SD263C45S50L

VS-SD263C45S50L

DIODE GP 4.5KV 375A DO200AB

Vishay General Semiconductor - Diodes Division
2,498 -

RFQ

VS-SD263C45S50L

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Clamp On - 5 µs 50 mA @ 4500 V 4500 V 375A - 3.2 V @ 1000 A
VS-SD1700C45K

VS-SD1700C45K

DIODE GP 4.5KV 1875A DO200AC

Vishay General Semiconductor - Diodes Division
3,910 -

RFQ

VS-SD1700C45K

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Clamp On - - 75 mA @ 4500 V 4500 V 1875A - 2.11 V @ 4000 A
1N4151TR

1N4151TR

DIODE GEN PURP 75V 150MA DO35

Vishay General Semiconductor - Diodes Division
42,942 -

RFQ

1N4151TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 2pF @ 0V, 1MHz 4 ns 50 nA @ 50 V 75 V 150mA 175°C (Max) 1 V @ 50 mA
1N4154TR

1N4154TR

DIODE GEN PURP 25V 150MA DO35

Vishay General Semiconductor - Diodes Division
27,172 -

RFQ

1N4154TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 100 nA @ 25 V 25 V 150mA -65°C ~ 175°C 1 V @ 30 mA
VS-3EYH01-M3/H

VS-3EYH01-M3/H

FRED PT RECTIFIER SLIMSMAW

Vishay General Semiconductor - Diodes Division
14,522 -

RFQ

VS-3EYH01-M3/H

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 16pF @ 200V 30 ns 2 µA @ 100 V 100 V 3A -55°C ~ 175°C 950 mV @ 3 A
VS-SD1553C30S30K

VS-SD1553C30S30K

DIODE GEN PURP 3KV 1650A DO200AC

Vishay General Semiconductor - Diodes Division
2,666 -

RFQ

VS-SD1553C30S30K

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Clamp On - - - 3000 V 1650A -40°C ~ 150°C 2.6 V @ 4000 A
SB240-E3/54

SB240-E3/54

DIODE SCHOTTKY 40V 2A DO204AC

Vishay General Semiconductor - Diodes Division
9,440 -

RFQ

SB240-E3/54

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 2A -65°C ~ 125°C 500 mV @ 2 A
SS3P4HM3/84A

SS3P4HM3/84A

DIODE SCHOTTKY 3A 40V DO-220AA

Vishay General Semiconductor - Diodes Division
5,396 -

RFQ

SS3P4HM3/84A

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 130pF @ 4V, 1MHz - 150 µA @ 40 V 40 V 3A -55°C ~ 150°C 600 mV @ 3 A
ES2F-E3/5BT

ES2F-E3/5BT

DIODE GEN PURP 300V 2A DO214AA

Vishay General Semiconductor - Diodes Division
9,617 -

RFQ

ES2F-E3/5BT

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 2A -50°C ~ 150°C 1.1 V @ 2 A
BAV21-TAP

BAV21-TAP

DIODE GEN PURP 200V 250MA DO35

Vishay General Semiconductor - Diodes Division
34,063 -

RFQ

BAV21-TAP

Scheda tecnica

Cut Tape (CT),Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 1.5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 200 V 250mA (DC) 175°C (Max) 1 V @ 100 mA
1N4150TAP

1N4150TAP

DIODE GEN PURP 50V 150MA DO35

Vishay General Semiconductor - Diodes Division
24,917 -

RFQ

1N4150TAP

Scheda tecnica

Cut Tape (CT),Tape & Box (TB) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 2.5pF @ 0V, 1MHz 4 ns 100 nA @ 50 V 50 V 150mA -65°C ~ 175°C 1 V @ 200 mA
VS-SD3000C08K

VS-SD3000C08K

DIODE GP 800V 3800A DO200AC

Vishay General Semiconductor - Diodes Division
2,423 -

RFQ

VS-SD3000C08K

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Clamp On - - 75 mA @ 800 V 800 V 3800A - 1.22 V @ 6000 A
VS-SD1553C18S20K

VS-SD1553C18S20K

DIODE GP 1.8KV 1825A DO200AC

Vishay General Semiconductor - Diodes Division
2,753 -

RFQ

VS-SD1553C18S20K

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Clamp On - 2 µs - 1800 V 1825A -40°C ~ 150°C 2.23 V @ 4000 A
SB240S-E3/54

SB240S-E3/54

DIODE SCHOTTKY 40V 2A DO204AL

Vishay General Semiconductor - Diodes Division
20,810 -

RFQ

SB240S-E3/54

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 2A -65°C ~ 125°C 550 mV @ 2 A
ES1PB-M3/84A

ES1PB-M3/84A

DIODE GEN PURP 100V 1A DO220AA

Vishay General Semiconductor - Diodes Division
7,998 -

RFQ

ES1PB-M3/84A

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 25 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 920 mV @ 1 A
VS-SD1553C18S30K

VS-SD1553C18S30K

DIODE GP 1.8KV 1650A DO200AC

Vishay General Semiconductor - Diodes Division
2,271 -

RFQ

VS-SD1553C18S30K

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Clamp On - 3 µs 75 mA @ 1800 V 1800 V 1650A - 2.6 V @ 4000 A
VS-SD2500C12K

VS-SD2500C12K

DIODE GP 1.2KV 3000A DO200AC

Vishay General Semiconductor - Diodes Division
3,868 -

RFQ

VS-SD2500C12K

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Clamp On - - 75 mA @ 1200 V 1200 V 3000A - 1.41 V @ 4000 A
VS-SD2500C16K

VS-SD2500C16K

DIODE GP 1.6KV 3000A DO200AC

Vishay General Semiconductor - Diodes Division
2,792 -

RFQ

VS-SD2500C16K

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Clamp On - - 75 mA @ 1600 V 1600 V 3000A - 1.41 V @ 4000 A
VS-40HFL10S02M

VS-40HFL10S02M

DIODE GEN PURP 100V 40A DO203AB

Vishay General Semiconductor - Diodes Division
2,604 -

RFQ

VS-40HFL10S02M

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 100 V 40A -40°C ~ 125°C 1.3 V @ 125 A
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