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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-40HFL40S02MDIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,829 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 40A | -40°C ~ 125°C | 1.3 V @ 125 A | |
|
|
VS-40HFLR60S02MDIODE GEN PURP 600V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,316 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 600 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
|
VS-SD600N20PCDIODE GEN PURP 2KV 600A B8 Vishay General Semiconductor - Diodes Division |
3,300 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 2000 V | 2000 V | 600A | -40°C ~ 180°C | 1.31 V @ 1500 A | |
|
|
VS-70HFL40S02MDIODE GEN PURP 400V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,549 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | - | 400 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
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VS-SD600R20PCDIODE GEN PURP 2KV 600A B8 Vishay General Semiconductor - Diodes Division |
2,846 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 2000 V | 2000 V | 600A | -40°C ~ 190°C | 1.31 V @ 1500 A | |
|
|
VS-70HFL60S02MDIODE GEN PURP 600V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,583 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | - | 600 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
|
VS-70HFLR40S02MDIODE GEN PURP 400V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,143 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | - | 400 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
|
VS-70HFLR60S02MDIODE GEN PURP 600V 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,458 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | - | 600 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
|
VS-41HFR40MDIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,427 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 400 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
MMBD914-HE3-18DIODE GEN PURP 100V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
21,770 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA | 150°C (Max) | 1 V @ 10 mA |
|
BYG22D-E3/TRDIODE AVALANCHE 200V 2A DO214AC Vishay General Semiconductor - Diodes Division |
31,174 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
S2JHE3_A/HDIODE GEN PURP 600V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
80,684 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
BAW27-TRDIODE GEN PURP 60V 600MA DO35 Vishay General Semiconductor - Diodes Division |
33,426 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 6 ns | 100 nA @ 60 V | 60 V | 600mA (DC) | 175°C (Max) | 1.25 V @ 400 mA |
|
1N5402-E3/73DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,736 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
VS-42HFR80MDIODE GEN PURP 800V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,766 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 800 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
VS-SD800C40LDIODE GEN PURP 4KV 1065A DO200AB Vishay General Semiconductor - Diodes Division |
3,083 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Clamp On | - | - | 50 mA @ 4000 V | 4000 V | 1065A | - | 1.95 V @ 2000 A | |
|
ES2G-E3/52TDIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division |
157,981 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
1N4005GP-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
14,937 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
SS26-E3/52TDIODE SCHOTTKY 60V 2A DO214AA Vishay General Semiconductor - Diodes Division |
340 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -65°C ~ 125°C | 700 mV @ 2 A | |
|
|
1N4001GP-E3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
12,099 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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